公开(公告)号：US20200152545A1

公开(公告)日：2020-05-14

申请号：US16744525

申请日：2020-01-16

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Atsushi KUROKAWA ,  Yuichi SANO ,  Toshihiro TADA

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/31 ,  H01L21/78 ,  H01L21/56 ,  H01L21/3205

Abstract: A semiconductor chip is mounted on a substrate in a face-down manner. A metal film is arranged on a back surface of the semiconductor chip facing an opposite side from the substrate away from an edge of the back surface. A sealing resin layer seals the semiconductor chip with a part of the metal film being exposed from the sealing resin layer.

公开(公告)号：US20250054944A1

公开(公告)日：2025-02-13

申请号：US18933129

申请日：2024-10-31

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Yuichi SANO

IPC: H01M4/134 ,  H01M4/02 ,  H01M4/38 ,  H01M4/66

Abstract: A negative electrode and a secondary battery capable of improving cycle characteristics are provided. The negative electrode includes a negative electrode current collector, a negative electrode active material layer, a first layer provided between the negative electrode current collector and the negative electrode active material layer, and a second layer provided on the negative electrode active material layer. The negative electrode current collector contains at least one or more of copper, nickel, and iron, the negative electrode active material layer contains silicon, the first layer contains silicon, a metal element constituting the negative electrode current collector, and at least one or more of titanium, nickel, zinc, silver, iron, boron, indium, and germanium, and the second layer contains silicon and at least one or more of titanium, nickel, zinc, silver, iron, boron, indium, and germanium.

公开(公告)号：US20190267479A1

公开(公告)日：2019-08-29

申请号：US16268557

申请日：2019-02-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Atsushi KUROKAWA ,  Yuichi SANO

IPC: H01L29/737 ,  H01L23/00 ,  H01L27/082 ,  H01L25/18 ,  H01L29/08 ,  H01L29/417 ,  H01L29/10 ,  H01L23/528 ,  H01L29/205

Abstract: A semiconductor device includes a semiconductor element including a bipolar transistor disposed on a compound semiconductor substrate, a collector electrode, a base electrode, and an emitter electrode, the bipolar transistor including a collector layer, a base layer, and an emitter layer, the collector electrode being in contact with the collector layer, the base electrode being in contact with the base layer, the emitter electrode being in contact with the emitter layer; a protective layer disposed on one surface of the semiconductor element; an emitter redistribution layer electrically connected to the emitter electrode via a contact hole in the protective layer; and a stress-relieving layer disposed between the emitter redistribution layer and the emitter layer in a direction perpendicular to a surface of the compound semiconductor substrate.

公开(公告)号：US20180247895A1

公开(公告)日：2018-08-30

申请号：US15903908

申请日：2018-02-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yuichi SANO ,  Atsushi KUROKAWA ,  Kazuya KOBAYASHI

IPC: H01L23/532 ,  H01L23/485

CPC classification number: H01L23/53252 ,  H01L23/485

Abstract: A semiconductor device includes electrodes which contain Au and which are placed above conductive layers in a region adjacent to stacked insulating films and also includes base layers which are composed of compositionally modulated layers and which are placed between the electrodes and the conductive layers. The base layers include lateral end sections composed of single layers projecting from lateral end sections of the electrodes in the direction of the interlayer interface between the insulating films; sections which are located under the electrodes and of which a major compositional component is Ti or Ti and W; and projecting sections which project from under the electrodes in the direction of the interlayer interface between the insulating films and of which compositional components are compositionally modulated to Ti and O, to Ti, O, and N, or to Ti, W, O, and N.

公开(公告)号：US20240347699A1

公开(公告)日：2024-10-17

申请号：US18755064

申请日：2024-06-26

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Yuichi SANO ,  Yasuhiro IKEDA ,  Qin SI ,  Daisuke ITO ,  Yuta KIGUCHI

IPC: H01M4/36 ,  H01M4/02 ,  H01M4/38 ,  H01M4/485

CPC classification number: H01M4/364 ,  H01M4/386 ,  H01M4/485 ,  H01M2004/027

Abstract: A negative electrode active material for a secondary battery includes a negative electrode active material particle that includes a first object including a silicon oxide, and a second object including at least one of copper, a copper compound, tungsten, or a molybdenum oxide and attached to a surface of the first object. A Raman spectrum of the negative electrode active material particle has a maximum peak within a range of greater than or equal to 470 cm−1 and less than or equal to 490 cm−1. An XRD spectrum thereof has a peak within a range of 37°±1° and a peak within a range of 44°±1°, has a peak within a range of 40°±1°, or has a peak within any one of a range of 23°±1°, a range of 25°±1°, a range of 37°±1°, a range of 41°±1°, a range of 54°±1°, or a range of 60°±10.

公开(公告)号：US20200161226A1

公开(公告)日：2020-05-21

申请号：US16749904

申请日：2020-01-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Atsushi KUROKAWA ,  Hiroaki TOKUYA ,  Kazuya KOBAYASHI ,  Yuichi SANO

IPC: H01L23/495 ,  H01L23/00

Abstract: A dielectric film is disposed on a semiconductor substrate, and a conductor including a bent section is arranged between the semiconductor substrate and the dielectric film. A pad is disposed on the dielectric film. The pad is covered with a protective film. The protective film has an opening through which an upper surface of the pad is exposed. The bent section in the conductor and the pad overlap each other as seen in plan view, and an inside corner and an outside corner in the bent section are chamfered.