公开(公告)号：US20200051941A1

公开(公告)日：2020-02-13

申请号：US16511086

申请日：2019-07-15

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Katsunari NAKAZAWA ,  Takanori UEJIMA ,  Motoji TSUDA ,  Yuji TAKEMATSU ,  Dai NAKAGAWA ,  Tetsuro HARADA ,  Masahide TAKEBE ,  Naoya MATSUMOTO ,  Yoshiaki SUKEMORI ,  Mitsunori SAMATA ,  Yutaka SASAKI ,  Yuki FUKUDA

IPC: H01L23/00 ,  H03F3/213 ,  H03F3/68 ,  H01L23/66 ,  H03F1/30 ,  H04B1/04

Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.

公开(公告)号：US20200051942A1

公开(公告)日：2020-02-13

申请号：US16512790

申请日：2019-07-16

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Katsunari NAKAZAWA ,  Takanori UEJIMA ,  Motoji TSUDA ,  Yuji TAKEMATSU ,  Dai NAKAGAWA ,  Tetsuro HARADA ,  Masahide TAKEBE ,  Naoya MATSUMOTO ,  Yoshiaki SUKEMORI ,  Mitsunori SAMATA ,  Yutaka SASAKI ,  Yuki FUKUDA

IPC: H01L23/00 ,  H03F3/213 ,  H01L23/538 ,  H01L23/66 ,  H03F3/21 ,  H03F1/30 ,  H04B1/04

Abstract: A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.