公开(公告)号：US07008863B2

公开(公告)日：2006-03-07

申请号：US10934153

申请日：2004-09-03

申请人： Eok Su Kim ,  Ho Nyeon Lee ,  Myung Kwan Ryu ,  Jae Chul Park ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

发明人： Eok Su Kim ,  Ho Nyeon Lee ,  Myung Kwan Ryu ,  Jae Chul Park ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC分类号： H01L21/36 ,  H01L21/205

CPC分类号： H01L21/0268 ,  B23K26/066 ,  H01L21/02686 ,  H01L21/2026

摘要： Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first shot region are positioned corresponding to the non-transmission sections of the second shot region, the non-transmission sections of the first shot region are positioned corresponding to the transmission sections of the second shot region, and the transmission sections of the third shot region are aligned corresponding to center portions of the transmission sections of the first and second shot regions. Primary to nth laser irradiation processes are performed with respect to the glass substrate, thereby crystallizing the amorphous silicon film into the polycrystalline silicon film.

摘要翻译： 公开了通过使非晶硅膜结晶来形成多晶硅膜的方法。 掩模具有具有相同长度的第一至第三射击区域。 第一到第三射击区域具有交替对准的透射部分和非透射部分。 第一拍摄区域的发送部分对应于第二拍摄区域的非发送部分定位，第一拍摄区域的非透射部分对应于第二拍摄区域的发射部分定位，并且发射部分 对应于第一和第二射击区域的透射部分的中心部分对齐。 对玻璃基板进行初级至第n次激光照射处理，从而使非晶硅膜结晶成多晶硅膜。

公开(公告)号：US07033915B2

公开(公告)日：2006-04-25

申请号：US10881257

申请日：2004-06-30

申请人： Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

发明人： Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC分类号： H01L21/20

CPC分类号： H01L27/1285 ,  B23K26/066 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1296 ,  H01L27/3244

摘要： Disclosed is a method for crystallizing a single crystalline Si film on an amorphous substrate, such as a glass substrate or a plastic substrate. The method includes the steps of selectively irradiating the laser beam onto a pixel section TFT forming region and a peripheral circuit TFT forming region of the amorphous silicon film through primary and secondary laser irradiation processes, thereby forming a poly-silicon film and irradiating the laser beam onto one of grains formed in the poly-silicon film through a third laser irradiation process, thereby forming a single crystalline silicon region having a desired size on a predetermined portion of the amorphous silicon film. The amorphous silicon film is locally crystallized into the single crystalline silicon film so that characteristics of TFTs for the pixel section and the peripheral circuit are improved while ensuring high uniformity.

摘要翻译： 公开了一种在诸如玻璃基板或塑料基板的非晶基底上结晶单晶Si膜的方法。 该方法包括以下步骤：通过一次和二次激光照射处理将激光束选择性地照射到非晶硅膜的像素部分TFT形成区域和外围电路TFT形成区域，从而形成多晶硅膜并照射激光束 通过第三激光照射工艺在形成在多晶硅膜中的晶粒中的一个上形成在非晶硅膜的预定部分上具有所需尺寸的单晶硅区域。 将非晶硅膜局部结晶化为单晶硅膜，从而提高像素部分和外围电路的TFT的特性，同时确保高均匀性。

公开(公告)号：US07205033B2

公开(公告)日：2007-04-17

申请号：US10934826

申请日：2004-09-03

申请人： Eok Su Kim ,  Ho Nyeon Lee ,  Myung Kwan Ryu ,  Jae Chul Park ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

发明人： Eok Su Kim ,  Ho Nyeon Lee ,  Myung Kwan Ryu ,  Jae Chul Park ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC分类号： B05D3/06 ,  C23C16/04 ,  H01L21/20 ,  H01L21/027 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L29/6675 ,  C30B13/24 ,  C30B29/06

摘要： Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

摘要翻译： 公开了一种形成多晶硅薄膜晶体管的多晶硅膜的方法。 该方法包括通过使用掩模图案将激光束照射到非晶硅膜上而使沉积在玻璃基板上的非晶硅膜结晶的步骤。 当通过具有掩模图案的掩模将激光束照射到非晶硅膜上时，玻璃基板水平移动与掩模图案的平移距离对应的预定距离单位，从而生长为圆形的晶粒。

公开(公告)号：US07026201B2

公开(公告)日：2006-04-11

申请号：US11085953

申请日：2005-03-22

申请人： Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

发明人： Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

IPC分类号： H01L21/336

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

摘要： A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.

摘要翻译： 一种形成多晶硅薄膜晶体管的方法。 该方法包括以下步骤：通过结晶方法形成包含多个突起的多晶硅层，该结晶方法由于晶粒之间的碰撞而形成多个突起; 以仅包括多个突起的两个突起的有源图案图案化多晶硅层，所述突起彼此分开并位于栅电极形成区域的两侧; 在图案化的多晶硅层上施加阻挡层，同时部分地覆盖两个突起; 以及在形成在栅电极形成区的两侧的多晶硅层的突起处，通过将掺杂剂离子注入到所得到的层压中，形成源电极和漏电极。

公开(公告)号：US20050112809A1

公开(公告)日：2005-05-26

申请号：US10881257

申请日：2004-06-30

申请人： Myung Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

发明人： Myung Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC分类号： G02F1/136 ,  B23K26/06 ,  H01L21/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786

CPC分类号： H01L27/1285 ,  B23K26/066 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1296 ,  H01L27/3244

摘要： Disclosed is a method for crystallizing a single crystalline Si film on an amorphous substrate, such as a glass substrate or a plastic substrate. The method includes the steps of selectively irradiating the laser beam onto a pixel section TFT forming region and a peripheral circuit TFT forming region of the amorphous silicon film through primary and secondary laser irradiation processes, thereby forming a poly-silicon film and irradiating the laser beam onto one of grains formed in the poly-silicon film through a third laser irradiation process, thereby forming a single crystalline silicon region having a desired size on a predetermined portion of the amorphous silicon film. The amorphous silicon film is locally crystallized into the single crystalline silicon film so that characteristics of TFTs for the pixel section and the peripheral circuit are improved while ensuring high uniformity.

摘要翻译： 公开了一种在诸如玻璃基板或塑料基板的非晶基底上结晶单晶Si膜的方法。 该方法包括以下步骤：通过一次和二次激光照射处理将激光束选择性地照射到非晶硅膜的像素部分TFT形成区域和外围电路TFT形成区域，从而形成多晶硅膜并照射激光束 通过第三激光照射工艺在形成在多晶硅膜中的晶粒中的一个上形成在非晶硅膜的预定部分上具有所需尺寸的单晶硅区域。 将非晶硅膜局部结晶化为单晶硅膜，从而提高像素部分和外围电路的TFT的特性，同时确保高均匀性。

公开(公告)号：US07903187B2

公开(公告)日：2011-03-08

申请号：US11635501

申请日：2006-12-08

申请人： Hyun Soo Shin ,  Yeon Gon Mo ,  Jae Kyeong Jeong ,  Se Yeoul Kwon

发明人： Hyun Soo Shin ,  Yeon Gon Mo ,  Jae Kyeong Jeong ,  Se Yeoul Kwon

IPC分类号： G02F1/1333 ,  H01L27/13

CPC分类号： H01L27/0248 ,  G02F1/136204 ,  H01L27/12 ,  H01L27/3244 ,  H01L27/3276

摘要： A static electricity preventing assembly for an electronic device, may include a substrate, a buffer layer on the substrate, the buffer layer including a plurality of contact holes exposing respective regions of the substrate, a shorting bar on the buffer layer, pad electrodes on the buffer layer, metal wiring lines on the buffer layer, wherein a first portion of each of the metal wiring lines may be electrically connected to the substrate through the contact holes, a second portion of each of the metal wiring lines may be connected to a respective one of the pad electrodes, and a third portion of each of the metal wiring lines may be connected to the shorting bar, wherein the first portion may be between the second portion and the third portion.

摘要翻译： 一种用于电子设备的静电防止组件可以包括衬底，衬底上的缓冲层，缓冲层包括暴露衬底各自区域的多个接触孔，缓冲层上的短路棒， 缓冲层，缓冲层上的金属布线，其中每个金属布线的第一部分可以通过接触孔电连接到基板，每个金属布线的第二部分可以连接到相应的 焊盘电极中的一个，并且每个金属布线的第三部分可以连接到短路棒，其中第一部分可以在第二部分和第三部分之间。

公开(公告)号：US07868327B2

公开(公告)日：2011-01-11

申请号：US11508530

申请日：2006-08-22

申请人： Jae Kyeong Jeong ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo

发明人： Jae Kyeong Jeong ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo

IPC分类号： H01L29/04

CPC分类号： H01L29/78603 ,  H01L29/66757

摘要： A thin film transistor (TFT) and a method of manufacturing the same, and more particularly, a TFT for reducing leakage current and a method of manufacturing the same are provided. The TFT includes a flexible substrate, a diffusion preventing layer formed on the flexible substrate, a buffer layer formed of at least two insulated materials on the diffusion preventing layer, a semiconductor layer formed on a region of the buffer layer to include a channel layer and a source and drain region, a gate insulating layer formed on the buffer layer including the semiconductor layer, a gate electrode formed on the gate insulating layer in a region corresponding to the channel layer, an interlayer insulating layer formed on the gate insulating layer including the gate electrode, and source and drain electrodes formed in the interlayer insulating layer to include a predetermined contact hole that exposes at least a region of the source and drain region and to be connected to the source and drain region.

摘要翻译： 提供一种薄膜晶体管（TFT）及其制造方法，更具体地说，提供了一种用于减小漏电流的TFT及其制造方法。 TFT包括柔性基板，形成在柔性基板上的扩散防止层，由扩散防止层上的至少两个绝缘材料形成的缓冲层，形成在缓冲层的包括沟道层的区域上的半导体层，以及 源极和漏极区域，形成在包括半导体层的缓冲层上的栅极绝缘层，形成在与沟道层对应的区域中的栅极绝缘层上的栅极电极，形成在栅极绝缘层上的层间绝缘层， 栅极电极和形成在层间绝缘层中的源电极和漏电极，以包括预定的接触孔，其暴露出源极和漏极区域的至少一部分并连接到源极和漏极区域。

公开(公告)号：US07692381B2

公开(公告)日：2010-04-06

申请号：US11638792

申请日：2006-12-14

申请人： Se Yeoul Kwon ,  Hyun Soo Shin ,  Jae Kyeong Jeong

发明人： Se Yeoul Kwon ,  Hyun Soo Shin ,  Jae Kyeong Jeong

IPC分类号： H01J1/62

CPC分类号： H01L51/52 ,  H01L27/3244 ,  H01L2251/5338

摘要： An organic light emitting display device which can prevent separation of a buffer layer, thereby reducing an electrical short is disclosed. One embodiment of the organic light emitting display device includes a substrate made of a metal, a metal thin film formed on the substrate, a buffer layer formed on the metal thin film, and an organic light emitting diode formed on the buffer layer. Accordingly, a leakage current caused by an electrical short can be effectively prevented by preventing the separation of the buffer layer.

摘要翻译： 公开了一种能够防止缓冲层分离从而减少电短路的有机发光显示装置。 有机发光显示装置的一个实施例包括由金属制成的基板，形成在基板上的金属薄膜，形成在金属薄膜上的缓冲层和形成在缓冲层上的有机发光二极管。 因此，通过防止缓冲层的分离，可以有效地防止由电气短路引起的漏电流。

公开(公告)号：US07995023B2

公开(公告)日：2011-08-09

申请号：US11478169

申请日：2006-06-28

申请人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo ,  Keum Nam Kim

发明人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo ,  Keum Nam Kim

IPC分类号： G09G3/38

CPC分类号： G02F1/13458 ,  G02F1/13452 ,  G02F1/1362 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/3276 ,  H01L29/78648 ,  H01L51/52

摘要： A flat panel display and method for driving the same. The flat panel display includes a conductive substrate forming an image display unit having at least one thin film transistor and a pad unit including a plurality of terminals, wherein the conductive substrate is laminated with a plurality of insulating layers to form the image display unit and the pad unit; a substrate-exposing part for exposing the conductive substrate is formed by removing at least one area of the insulating layers formed on the pad unit; a system control panel for supplying a reverse bias voltage through the substrate-exposing part, wherein the system control panel is electrically connected with the pad unit; and a metal member for transferring the reverse bias voltage to the conductive substrate, wherein the metal member is formed between the substrate-exposing part and the system control panel.

摘要翻译： 一种平板显示器及其驱动方法。 平板显示器包括形成具有至少一个薄膜晶体管的图像显示单元的导电基板和包括多个端子的焊盘单元，其中导电基板层叠有多个绝缘层以形成图像显示单元，并且 垫单位 通过去除在衬垫单元上形成的绝缘层的至少一个区域来形成用于暴露导电衬底的衬底暴露部分; 用于通过所述衬底暴露部分提供反向偏置电压的系统控制面板，其中所述系统控制面板与所述衬垫单元电连接; 以及用于将所述反向偏置电压传送到所述导电基板的金属构件，其中所述金属构件形成在所述基板曝光部和所述系统控制面板之间。

公开(公告)号：US07727823B2

公开(公告)日：2010-06-01

申请号：US11477101

申请日：2006-06-27

申请人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo ,  Keum Nam Kim

发明人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo ,  Keum Nam Kim

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78603 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78606 ,  H01L29/78648

摘要： A flat panel display for preventing a thin film transistor from deteriorating due to voltage, static electricity, and external force, accidentally applied to a substrate, and a method for driving the same. The flat panel display includes a conductive substrate, at least one insulating layer formed on the conductive substrate, at least one thin film transistor formed on the conductive substrate, and a ground formed in a region of the conductive substrate to ground the conductive substrate. Thus, the deterioration of the thin film transistor that would be generated by voltage, static electricity, or external force, accidentally applied to the conductive substrate can be substantially prevented and the performance of the display is enhanced.

摘要翻译： 用于防止薄膜晶体管由于电压，静电和外力而意外施加到基板的劣化的平板显示器及其驱动方法。 平板显示器包括导电基板，形成在导电基板上的至少一个绝缘层，形成在导电基板上的至少一个薄膜晶体管，以及形成在导电基板的区域中的接地导电基板的接地。 因此，可以基本上防止意外地施加到导电基板上的由电压，静电或外力产生的薄膜晶体管的劣化，从而提高显示器的性能。