公开(公告)号：US07026201B2

公开(公告)日：2006-04-11

申请号：US11085953

申请日：2005-03-22

申请人： Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

发明人： Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

IPC分类号： H01L21/336

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

摘要： A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.

摘要翻译： 一种形成多晶硅薄膜晶体管的方法。 该方法包括以下步骤：通过结晶方法形成包含多个突起的多晶硅层，该结晶方法由于晶粒之间的碰撞而形成多个突起; 以仅包括多个突起的两个突起的有源图案图案化多晶硅层，所述突起彼此分开并位于栅电极形成区域的两侧; 在图案化的多晶硅层上施加阻挡层，同时部分地覆盖两个突起; 以及在形成在栅电极形成区的两侧的多晶硅层的突起处，通过将掺杂剂离子注入到所得到的层压中，形成源电极和漏电极。

公开(公告)号：US07033915B2

公开(公告)日：2006-04-25

申请号：US10881257

申请日：2004-06-30

申请人： Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

发明人： Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC分类号： H01L21/20

CPC分类号： H01L27/1285 ,  B23K26/066 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1296 ,  H01L27/3244

摘要： Disclosed is a method for crystallizing a single crystalline Si film on an amorphous substrate, such as a glass substrate or a plastic substrate. The method includes the steps of selectively irradiating the laser beam onto a pixel section TFT forming region and a peripheral circuit TFT forming region of the amorphous silicon film through primary and secondary laser irradiation processes, thereby forming a poly-silicon film and irradiating the laser beam onto one of grains formed in the poly-silicon film through a third laser irradiation process, thereby forming a single crystalline silicon region having a desired size on a predetermined portion of the amorphous silicon film. The amorphous silicon film is locally crystallized into the single crystalline silicon film so that characteristics of TFTs for the pixel section and the peripheral circuit are improved while ensuring high uniformity.

摘要翻译： 公开了一种在诸如玻璃基板或塑料基板的非晶基底上结晶单晶Si膜的方法。 该方法包括以下步骤：通过一次和二次激光照射处理将激光束选择性地照射到非晶硅膜的像素部分TFT形成区域和外围电路TFT形成区域，从而形成多晶硅膜并照射激光束 通过第三激光照射工艺在形成在多晶硅膜中的晶粒中的一个上形成在非晶硅膜的预定部分上具有所需尺寸的单晶硅区域。 将非晶硅膜局部结晶化为单晶硅膜，从而提高像素部分和外围电路的TFT的特性，同时确保高均匀性。

公开(公告)号：US07205033B2

公开(公告)日：2007-04-17

申请号：US10934826

申请日：2004-09-03

申请人： Eok Su Kim ,  Ho Nyeon Lee ,  Myung Kwan Ryu ,  Jae Chul Park ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

发明人： Eok Su Kim ,  Ho Nyeon Lee ,  Myung Kwan Ryu ,  Jae Chul Park ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC分类号： B05D3/06 ,  C23C16/04 ,  H01L21/20 ,  H01L21/027 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L29/6675 ,  C30B13/24 ,  C30B29/06

摘要： Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

摘要翻译： 公开了一种形成多晶硅薄膜晶体管的多晶硅膜的方法。 该方法包括通过使用掩模图案将激光束照射到非晶硅膜上而使沉积在玻璃基板上的非晶硅膜结晶的步骤。 当通过具有掩模图案的掩模将激光束照射到非晶硅膜上时，玻璃基板水平移动与掩模图案的平移距离对应的预定距离单位，从而生长为圆形的晶粒。

公开(公告)号：US07008863B2

公开(公告)日：2006-03-07

申请号：US10934153

申请日：2004-09-03

申请人： Eok Su Kim ,  Ho Nyeon Lee ,  Myung Kwan Ryu ,  Jae Chul Park ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

发明人： Eok Su Kim ,  Ho Nyeon Lee ,  Myung Kwan Ryu ,  Jae Chul Park ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC分类号： H01L21/36 ,  H01L21/205

CPC分类号： H01L21/0268 ,  B23K26/066 ,  H01L21/02686 ,  H01L21/2026

摘要： Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first shot region are positioned corresponding to the non-transmission sections of the second shot region, the non-transmission sections of the first shot region are positioned corresponding to the transmission sections of the second shot region, and the transmission sections of the third shot region are aligned corresponding to center portions of the transmission sections of the first and second shot regions. Primary to nth laser irradiation processes are performed with respect to the glass substrate, thereby crystallizing the amorphous silicon film into the polycrystalline silicon film.

摘要翻译： 公开了通过使非晶硅膜结晶来形成多晶硅膜的方法。 掩模具有具有相同长度的第一至第三射击区域。 第一到第三射击区域具有交替对准的透射部分和非透射部分。 第一拍摄区域的发送部分对应于第二拍摄区域的非发送部分定位，第一拍摄区域的非透射部分对应于第二拍摄区域的发射部分定位，并且发射部分 对应于第一和第二射击区域的透射部分的中心部分对齐。 对玻璃基板进行初级至第n次激光照射处理，从而使非晶硅膜结晶成多晶硅膜。

公开(公告)号：US20050112809A1

公开(公告)日：2005-05-26

申请号：US10881257

申请日：2004-06-30

申请人： Myung Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

发明人： Myung Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC分类号： G02F1/136 ,  B23K26/06 ,  H01L21/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786

CPC分类号： H01L27/1285 ,  B23K26/066 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1296 ,  H01L27/3244

摘要： Disclosed is a method for crystallizing a single crystalline Si film on an amorphous substrate, such as a glass substrate or a plastic substrate. The method includes the steps of selectively irradiating the laser beam onto a pixel section TFT forming region and a peripheral circuit TFT forming region of the amorphous silicon film through primary and secondary laser irradiation processes, thereby forming a poly-silicon film and irradiating the laser beam onto one of grains formed in the poly-silicon film through a third laser irradiation process, thereby forming a single crystalline silicon region having a desired size on a predetermined portion of the amorphous silicon film. The amorphous silicon film is locally crystallized into the single crystalline silicon film so that characteristics of TFTs for the pixel section and the peripheral circuit are improved while ensuring high uniformity.

摘要翻译： 公开了一种在诸如玻璃基板或塑料基板的非晶基底上结晶单晶Si膜的方法。 该方法包括以下步骤：通过一次和二次激光照射处理将激光束选择性地照射到非晶硅膜的像素部分TFT形成区域和外围电路TFT形成区域，从而形成多晶硅膜并照射激光束 通过第三激光照射工艺在形成在多晶硅膜中的晶粒中的一个上形成在非晶硅膜的预定部分上具有所需尺寸的单晶硅区域。 将非晶硅膜局部结晶化为单晶硅膜，从而提高像素部分和外围电路的TFT的特性，同时确保高均匀性。

公开(公告)号：US07678621B2

公开(公告)日：2010-03-16

申请号：US11725123

申请日：2007-03-16

申请人： Myung Kwan Ryu ,  Eok Su Kim ,  Kyoung Seok Son ,  Jang Soon Im

发明人： Myung Kwan Ryu ,  Eok Su Kim ,  Kyoung Seok Son ,  Jang Soon Im

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Disclosed are a crystallization pattern, and a method for crystallizing amorphous silicon. The method includes the steps of forming an amorphous silicon film on a glass substrate, forming a crystallization pattern by patterning the amorphous silicon film, and crystallizing the crystallization pattern into polycrystalline silicon by irradiating a laser onto the crystallization pattern. The crystallization pattern includes a peripheral region located within a first distance from an edge of the crystallization pattern, and an internal region located away from the edge of the crystallization pattern by more than the first distance. The internal region is divided into at least one sub-region, each sub-region includes one crystallization inducement pattern, and an edge of each sub-region is located within a second distance from the crystallization inducement pattern.

摘要翻译： 公开了结晶图案和非晶硅结晶的方法。 该方法包括以下步骤：在玻璃基板上形成非晶硅膜，通过图案化非晶硅膜形成结晶图案，并通过将激光照射到结晶​​图案上将结晶图案结晶成多晶硅。 结晶图案包括位于距离结晶图案的边缘第一距离内的周边区域以及远离结晶图案的边缘超过第一距离的内部区域。 内部区域被划分为至少一个子区域，每个子区域包括一个结晶诱导图案，并且每个子区域的边缘位于离结晶诱导图案的第二距离内。

公开(公告)号：US20070218658A1

公开(公告)日：2007-09-20

申请号：US11725123

申请日：2007-03-16

申请人： Myung Kwan Ryu ,  Eok Su Kim ,  Kyoung Seok Son ,  Jang Soon Im

发明人： Myung Kwan Ryu ,  Eok Su Kim ,  Kyoung Seok Son ,  Jang Soon Im

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Disclosed are a crystallization pattern, and a method for crystallizing amorphous silicon. The method includes the steps of forming an amorphous silicon film on a glass substrate, forming a crystallization pattern by patterning the amorphous silicon film, and crystallizing the crystallization pattern into polycrystalline silicon by irradiating a laser onto the crystallization pattern. The crystallization pattern includes a peripheral region located within a first distance from an edge of the crystallization pattern, and an internal region located away from the edge of the crystallization pattern by more than the first distance. The internal region is divided into at least one sub-region, each sub-region includes one crystallization inducement pattern, and an edge of each sub-region is located within a second distance from the crystallization inducement pattern.

摘要翻译： 公开了结晶图案和非晶硅结晶的方法。 该方法包括以下步骤：在玻璃基板上形成非晶硅膜，通过图案化非晶硅膜形成结晶图案，并通过将激光照射到结晶​​图案上将结晶图案结晶成多晶硅。 结晶图案包括位于距离结晶图案的边缘第一距离内的周边区域以及远离结晶图案的边缘超过第一距离的内部区域。 内部区域被划分为至少一个子区域，每个子区域包括一个结晶诱导图案，并且每个子区域的边缘位于离结晶诱导图案的第二距离内。

公开(公告)号：US07135388B2

公开(公告)日：2006-11-14

申请号：US10714226

申请日：2003-11-14

申请人： Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim

发明人： Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim

IPC分类号： H01L21/20

CPC分类号： H01L21/02678 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02686 ,  H01L21/2026

摘要： The present invention relates to a method for fabricating a single crystal silicon thin film at the desired location to the desired size from an amorphous or polycrystalline thin film on a substrate using laser irradiation and laser beam movement along the substrate having the semiconductor thin films being irradiated. This method comprises the steps of: forming a semiconductor layer or a metal thin film on a transparent or semi-transparent substrate; forming a single crystal seed region on the substrate of the desired size by a crystallization method using laser irradiation; and converting the desired region of the semiconductor layer or metal thin film into a single crystal region, using the single crystal seed region.

摘要翻译： 本发明涉及一种使用激光照射从基板上的非晶或多晶薄膜在期望的位置制造单晶硅薄膜的方法，并且沿着具有半导体薄膜的基板的激光束移动 。 该方法包括以下步骤：在透明或半透明基板上形成半导体层或金属薄膜; 通过使用激光照射的结晶法在所需尺寸的基板上形成单晶种子区域; 并且使用单晶种子区域将半导体层或金属薄膜的期望区域转换为单晶区域。

公开(公告)号：US20070238270A1

公开(公告)日：2007-10-11

申请号：US11731983

申请日：2007-04-02

申请人： Eok Su Kim ,  Myung Kwan Ryu ,  Gon Son ,  Hyuk Soon Kwon ,  Jung Ho Park

发明人： Eok Su Kim ,  Myung Kwan Ryu ,  Gon Son ,  Hyuk Soon Kwon ,  Jung Ho Park

IPC分类号： H01L21/20

CPC分类号： H01L21/02691 ,  B23K26/066 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0268 ,  H01L21/02686 ,  H01L27/1285 ,  H01L27/1296

摘要： Disclosed is a method for forming a polycrystalline film. The method for forming a polycrystalline film from a film deposited on a glass substrate while a buffer layer is interposed between the deposited film and the glass substrate, which includes the steps of: preparing a mask including a transparent region having a larger size than that of resolution limitation of a laser beam equipment and an opaque region having a size which is smaller than that of the resolution limitation of the laser beam equipment; and irradiating laser beam of the maximum intensity to a film under the transparent region while irradiating the laser beam having a minimum intensity exceeding zero to the film under an opaque region by using the mask, thereby crystallizing the film by single irradiation of the laser beam.

摘要翻译： 公开了一种形成多晶膜的方法。 从沉积在玻璃基板上的膜形成多晶膜的方法，同时在沉积膜和玻璃基板之间插入缓冲层，其包括以下步骤：制备掩模，其包括具有比 激光束设备的分辨率限制和具有小于激光束设备的分辨率限制的尺寸的不透明区域; 并且通过使用掩模在不透明区域下向最薄强度超过零的激光束照射具有最大强度的激光束到透明区域下的膜，从而通过激光束的单次照射使膜结晶。

公开(公告)号：US08300027B2

公开(公告)日：2012-10-30

申请号：US12628625

申请日：2009-12-01

申请人： Eok Su Kim ,  Jaeyoung Choi

发明人： Eok Su Kim ,  Jaeyoung Choi

IPC分类号： G06F3/045

CPC分类号： G06F3/016 ,  G06F3/03547

摘要： A vibration touch sensor includes; a first substrate, a second substrate arranged to face the first substrate with a predetermined gap therebetween, a first electrode disposed on the first substrate, a second electrode disposed on the second substrate, a piezoelectric material layer disposed on one of the first electrode and the second electrode, wherein the piezoelectric material layer generates an electrical signal in response to an external touch applied to at least one of the first substrate and the second substrate, and a controller which receives the electrical signal generated from the piezoelectric material layer and generates a touch input signal, the controller controlling an alternating current voltage applied to at least one of the first electrode and the second electrode.

摘要翻译： 振动触摸传感器包括： 第一基板，布置成以其间具有预定间隙的方式面对第一基板的第二基板，设置在第一基板上的第一电极，设置在第二基板上的第二电极，设置在第一电极和第二基板之一上的压电材料层 第二电极，其中所述压电材料层响应于施加到所述第一基板和所述第二基板中的至少一个的外部触摸而产生电信号，以及控制器，其接收从所述压电材料层产生的电信号并产生触摸 输入信号，控制器控制施加到第一电极和第二电极中的至少一个的交流电压。