公开(公告)号：US09469538B1

公开(公告)日：2016-10-18

申请号：US14508184

申请日：2014-10-07

申请人： NANOSYS, INC.

发明人： Erik C. Scher ,  Mihai A. Buretea ,  William P. Freeman ,  Joel Gamoras ,  Baixin Qian ,  Jeffrey A. Whiteford

IPC分类号： C01B25/08 ,  B82Y30/00

CPC分类号： C01B25/087 ,  B82Y30/00 ,  C01P2004/30 ,  C01P2004/54 ,  C01P2006/40 ,  C07F5/003 ,  C07F17/00 ,  C30B7/00 ,  C30B7/14 ,  C30B29/40 ,  C30B29/60 ,  Y10S977/773 ,  Y10S977/815 ,  Y10S977/816 ,  Y10S977/818 ,  Y10S977/819 ,  Y10S977/932

摘要： Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

摘要翻译： 提供了生产纳米结构，特别是III-V族半导体纳米结构的方法。 该方法包括使用新的III族和/或V族前体，新的表面活性剂，氧化物受体，高温和/或稳定的共同产物。 还描述了相关组合物。 提供了可用作纳米结构合成前体的III族无机化合物的制备方法和组合物。 还描述了通过除去蒸气副产物从合成反应增加纳米结构的产率的方法。

公开(公告)号：US09688534B1

公开(公告)日：2017-06-27

申请号：US14988858

申请日：2016-01-06

申请人： NANOSYS, Inc.

发明人： Erik C. Scher ,  Mihai A. Buretea ,  William P. Freeman ,  Joel Gamoras ,  Baixin Qian ,  Jeffrey A. Whiteford

IPC分类号： C01B25/08

CPC分类号： C01B25/087 ,  B82Y30/00 ,  C01P2004/30 ,  C01P2004/54 ,  C01P2006/40 ,  C07F5/003 ,  C07F17/00 ,  C30B7/00 ,  C30B7/14 ,  C30B29/40 ,  C30B29/60 ,  Y10S977/773 ,  Y10S977/815 ,  Y10S977/816 ,  Y10S977/818 ,  Y10S977/819 ,  Y10S977/932

摘要： Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

公开(公告)号：US10266409B1

公开(公告)日：2019-04-23

申请号：US15792815

申请日：2017-10-25

申请人： NANOSYS, Inc.

发明人： Erik C. Scher ,  Mihai A. Buretea ,  William P. Freeman ,  Joel Gamoras ,  Baixin Qian ,  Jeffrey A. Whiteford

IPC分类号： C30B7/00 ,  C01B25/08 ,  C30B7/14 ,  C07F17/00 ,  C07F5/00 ,  C30B29/60 ,  C30B29/40 ,  B82Y30/00

摘要： Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.