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公开(公告)号：US11420412B2
公开(公告)日：2022-08-23
申请号：US17477265
申请日：2021-09-16
Applicant: Nanosys, Inc.
Inventor： Robert S. Dubrow , William P. Freeman , Ernest Lee , Paul Furuta
IPC: B32B5/16 , F21V9/30 , B32B9/04 , B82Y20/00 , F21V8/00 , G02F1/13357 , F21Y115/10 , G02F1/1335
Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
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2.发明授权公开(公告)号：US09884763B1
公开(公告)日：2018-02-06
申请号：US15485760
申请日：2017-04-12
Applicant: NANOSYS, Inc.
Inventor： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Balxin Qian , Jeffrey A. Whiteford
CPC classification number: C01B25/087 , B82Y30/00 , C01P2004/30 , C01P2004/54 , C01P2006/40 , C07F5/003 , C07F17/00 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/60 , Y10S977/773 , Y10S977/815 , Y10S977/816 , Y10S977/818 , Y10S977/819 , Y10S977/932
Abstract: Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
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3.发明授权公开(公告)号：US09688534B1
公开(公告)日：2017-06-27
申请号：US14988858
申请日：2016-01-06
Applicant: NANOSYS, Inc.
Inventor： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffrey A. Whiteford
IPC: C01B25/08
CPC classification number: C01B25/087 , B82Y30/00 , C01P2004/30 , C01P2004/54 , C01P2006/40 , C07F5/003 , C07F17/00 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/60 , Y10S977/773 , Y10S977/815 , Y10S977/816 , Y10S977/818 , Y10S977/819 , Y10S977/932
Abstract: Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
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公开(公告)号：US11198270B2
公开(公告)日：2021-12-14
申请号：US17118166
申请日：2020-12-10
Applicant: Nanosys, Inc.
Inventor： Robert S. Dubrow , William P. Freeman , Ernest Lee , Paul Furuta
IPC: B32B5/16 , F21V8/00 , B32B9/04 , F21V9/30 , G02F1/13357 , B82Y20/00 , G02F1/1335 , F21Y115/10
Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
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公开(公告)号：US10551553B2
公开(公告)日：2020-02-04
申请号：US16450568
申请日：2019-06-24
Applicant: Nanosys, Inc.
Inventor： Robert S. Dubrow , William P. Freeman , Ernest Lee , Paul Furuta
IPC: F21V8/00 , B32B5/16 , B32B9/04 , F21V9/30 , G02F1/1335 , B82Y20/00 , F21Y115/10
Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
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Patent Agency Ranking
公开(公告)号：US09685583B2
公开(公告)日：2017-06-20
申请号：US14669425
申请日：2015-03-26
Applicant: NANOSYS, Inc.
Inventor： Wenzhuo Guo , Jian Chen , Robert Dubrow , William P. Freeman
CPC classification number: C09K11/883 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/025 , C09K11/06 , C09K11/565 , C09K11/70 , H01L33/005 , H01L33/0083 , H01L33/06 , H01L33/502 , H01L2933/0025 , H01L2933/0041 , Y10S977/774 , Y10S977/778 , Y10S977/818 , Y10S977/824 , Y10S977/825 , Y10S977/84 , Y10S977/892 , Y10S977/95
Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.
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公开(公告)号：US20150236195A1
公开(公告)日：2015-08-20
申请号：US14669425
申请日：2015-03-26
Applicant: NANOSYS, Inc.
Inventor： Wenzhuo GUO , Jian Chen , Robert Dubrow , William P. Freeman
CPC classification number: C09K11/883 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/025 , C09K11/06 , C09K11/565 , C09K11/70 , H01L33/005 , H01L33/0083 , H01L33/06 , H01L33/502 , H01L2933/0025 , H01L2933/0041 , Y10S977/774 , Y10S977/778 , Y10S977/818 , Y10S977/824 , Y10S977/825 , Y10S977/84 , Y10S977/892 , Y10S977/95
Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.
Abstract translation: 提供了高度发光的纳米结构，特别是高度发光的量子点。 纳米结构具有高的光致发光量子产率，并且在某些实施例中发射特定波长的光并且具有窄的尺寸分布。 纳米结构可以包含配体，包括在壳形成期间使用的C5-C8羧酸配体和/或合成后提供的二羧酸或多羧酸配体。 还提供了用于生产这种高度发光的纳米结构的方法，包括用铟富集纳米结构核的方法和用于壳合成的技术。
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公开(公告)号：US10302845B2
公开(公告)日：2019-05-28
申请号：US15245020
申请日：2016-08-23
Applicant: Nanosys, Inc.
Inventor： Robert S. Dubrow , William P. Freeman , Ernest Lee , Paul Furuta
IPC: F21V8/00 , B82Y20/00 , B32B5/16 , B32B9/04 , G02F1/1335 , F21V9/30 , F21Y115/10
Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
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公开(公告)号：US09884993B2
公开(公告)日：2018-02-06
申请号：US14867583
申请日：2015-09-28
Applicant: Nanosys, Inc.
Inventor： Wenzhuo Guo , Jian Chen , Robert Dubrow , William P. Freeman
IPC: C09K11/06 , C09K11/88 , C09K11/02 , H01L33/00 , H01L33/06 , H01L33/50 , B82Y40/00 , B82Y20/00 , C09K11/56 , C09K11/70
CPC classification number: C09K11/883 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/025 , C09K11/06 , C09K11/565 , C09K11/70 , H01L33/005 , H01L33/0083 , H01L33/06 , H01L33/502 , H01L2933/0025 , H01L2933/0041 , Y10S977/774 , Y10S977/778 , Y10S977/818 , Y10S977/824 , Y10S977/825 , Y10S977/84 , Y10S977/892 , Y10S977/95
Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.
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公开(公告)号：US09631141B2
公开(公告)日：2017-04-25
申请号：US14669436
申请日：2015-03-26
Applicant: Nanosys, Inc.
Inventor： Wenzhuo Guo , Jian Chen , Robert Dubrow , William P. Freeman
CPC classification number: C09K11/883 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/025 , C09K11/06 , C09K11/565 , C09K11/70 , H01L33/005 , H01L33/0083 , H01L33/06 , H01L33/502 , H01L2933/0025 , H01L2933/0041 , Y10S977/774 , Y10S977/778 , Y10S977/818 , Y10S977/824 , Y10S977/825 , Y10S977/84 , Y10S977/892 , Y10S977/95
Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.
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