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公开(公告)号:US11876072B2
公开(公告)日:2024-01-16
申请号:US17465328
申请日:2021-09-02
发明人: Wei-Zhong Li , Yi-Ting Shih , Chien-Chung Wang , Hsih-Yang Chiu
IPC分类号: H01L23/00
CPC分类号: H01L24/85 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/03831 , H01L2224/04042 , H01L2224/48824 , H01L2224/85031 , H01L2224/85359
摘要: A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).
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公开(公告)号:US12113046B2
公开(公告)日:2024-10-08
申请号:US18386345
申请日:2023-11-02
发明人: Wei-Zhong Li , Yi-Ting Shih , Chien-Chung Wang , Hsih-Yang Chiu
IPC分类号: H01L23/00
CPC分类号: H01L24/85 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/03831 , H01L2224/04042 , H01L2224/48824 , H01L2224/85031 , H01L2224/85359
摘要: A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).
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