公开(公告)号：US09972520B2

公开(公告)日：2018-05-15

申请号：US14943290

申请日：2015-11-17

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Yang-Kuao Kuo ,  Yi-Hsiuan Yu ,  Jian-Long Ruan

IPC: H01T23/00 ,  H01L21/683 ,  H01J37/32 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/6831 ,  H01L21/68757 ,  H02N13/00

Abstract: Disclosed is an aluminum nitride electrostatic chuck, comprising: a positioning electrostatic chuck and a carrier structure. The positioning electrostatic chuck includes a groove structure layer, a dielectric insulation layer, and a heat conduction layer. In the groove structure layer on the surface of the electrostatic chuck is provided with cooling gas channels, to facilitate control of the temperature distribution of a wafer. The electrostatic chuck is especially designed for use in a semiconductor manufacturing process of high temperature and high plasma power density. The dielectric insulation layer is provided with embedded electrodes, such that voltage conversion can be carried out to effect wafer absorption/release. The cooling gas channels are used to control temperature of the absorbed wafer, by means of heat conduction of aluminum nitride electrostatic chuck. Therefore, wafer temperature distribution is controlled through aspect ratio and geometry of cooling gas channel.

公开(公告)号：US09814143B1

公开(公告)日：2017-11-07

申请号：US15362105

申请日：2016-11-28

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chung-Yen Lu ,  Yi-Hsiuan Yu ,  Chia-Ting Lin ,  Lea-Hwung Leu

IPC: H01L21/00 ,  H05K3/00 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L21/486 ,  H01L23/15 ,  H01L23/3732 ,  H01L23/49827

Abstract: A method of forming a pattern with high aspect ratio on a polycrystalline aluminum nitride substrate comprises the steps of (A) providing an aluminum nitride substrate and forming a barrier layer on the aluminum nitride substrate; (B) etching the barrier layer with an energy beam to form at least one recess in the barrier layer; (C) plasma etching the substrate to deepen the recess into the aluminum nitride substrate; (D) removing the barrier layer to obtain the aluminum nitride substrate having at least one pattern with high aspect ratio. The method uses the energy beam to directly form a pattern on the barrier layer, and further employs plasma etching to prepare the aluminum nitride substrate having a pattern with high aspect ratio quickly and effectively.

公开(公告)号：US20170140969A1

公开(公告)日：2017-05-18

申请号：US14943290

申请日：2015-11-17

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Yang-Kuao Kuo ,  Yi-Hsiuan Yu ,  Jian-Long Ruan

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/6831 ,  H01L21/68757 ,  H02N13/00

Abstract: Disclosed is an aluminum nitride electrostatic chuck, comprising: a positioning electrostatic chuck and a carrier structure. The positioning electrostatic chuck includes a groove structure layer, a dielectric insulation layer, and a heat conduction layer. In the groove structure layer on the surface of the electrostatic chuck is provided with cooling gas channels, to facilitate control of the temperature distribution of a wafer. The electrostatic chuck is especially designed for use in a semiconductor manufacturing process of high temperature and high plasma power density. The dielectric insulation layer is provided with embedded electrodes, such that voltage conversion can be carried out to effect wafer absorption/release. The cooling gas channels are used to control temperature of the absorbed wafer, by means of heat conduction of aluminum nitride electrostatic chuck. Therefore, wafer temperature distribution is controlled through aspect ratio and geometry of cooling gas channel.

公开(公告)号：US09480960B2

公开(公告)日：2016-11-01

申请号：US14556539

申请日：2014-12-01

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Yen-Feng Shih ,  Yi-Hsiuan Yu ,  Yen-Lin Tseng ,  Hou-An Hsieh

IPC: B32B5/16 ,  C09K5/00 ,  B01J13/14 ,  C09K5/06

CPC classification number: B01J13/14 ,  C09K5/06 ,  C09K5/063 ,  F28D20/023 ,  Y02E60/145

Abstract: A process for preparing a phase change microcapsule having a thermally conductive shell is introduced. The thermal conductivity of the encapsulation materials for the phase change microcapsules is increased by adding thermally conductive nano-materials. The vinylsilane compound is polymerized with the acrylic monomer to form the copolymer first, and then the thermally conductive inorganic material is added. Thereafter, the phase change microcapsule having the phase change material as the core and the thermally conductive material-containing copolymer as the shell is prepared. The polar functional groups on the surface of the thermally conductive inorganic material condense with the vinylsilane compound to form chemical bonding, thereby substantially increasing the compatibility between the thermally conductive inorganic material and the copolymer. Therefore, the thermally conductive material can be dispersed stably during the encapsulation of the microcapsules, and the phase change microcapsule having the thermally conductive shell can be obtained successfully.

Abstract translation: 引入了具有导热壳的相变微胶囊的制备方法。 通过加入导热纳米材料，增加了相变微胶囊封装材料的导热性。 乙烯基硅烷化合物与丙烯酸单体聚合，首先形成共聚物，然后加入导热性无机材料。 然后，准备以相变材料为芯，含有导热材料的共聚物为壳的相变微胶囊。 导热性无机材料表面的极性官能团与乙烯基硅烷化合物凝结形成化学键合，从而大大增加了导热无机材料与共聚物之间的相容性。 因此，可以在封装微胶囊期间稳定地分散导热材料，并且可以成功获得具有导热性壳的相变微胶囊。