公开(公告)号：US11522055B2

公开(公告)日：2022-12-06

申请号：US16962203

申请日：2019-01-11

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shinya Ohmagari ,  Hideaki Yamada ,  Hitoshi Umezawa ,  Nobuteru Tsubouchi ,  Akiyoshi Chayahara ,  Yoshiaki Mokuno ,  Akinori Seki ,  Fumiaki Kawai ,  Hiroaki Saitoh

IPC: H01L29/16 ,  C23C16/01 ,  C23C16/27 ,  C30B25/20 ,  C30B29/04 ,  H01L21/02 ,  H01L29/66 ,  H01L29/872

Abstract: A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm−1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.