公开(公告)号：US11522055B2

公开(公告)日：2022-12-06

申请号：US16962203

申请日：2019-01-11

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shinya Ohmagari ,  Hideaki Yamada ,  Hitoshi Umezawa ,  Nobuteru Tsubouchi ,  Akiyoshi Chayahara ,  Yoshiaki Mokuno ,  Akinori Seki ,  Fumiaki Kawai ,  Hiroaki Saitoh

IPC: H01L29/16 ,  C23C16/01 ,  C23C16/27 ,  C30B25/20 ,  C30B29/04 ,  H01L21/02 ,  H01L29/66 ,  H01L29/872

Abstract: A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm−1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

公开(公告)号：US11355591B2

公开(公告)日：2022-06-07

申请号：US16956499

申请日：2018-09-19

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Shinya Ohmagari ,  Hideaki Yamada ,  Akiyoshi Chayahara ,  Yoshiaki Mokuno

IPC: C23C16/27 ,  C30B25/02 ,  C30B29/04 ,  H01L29/16 ,  H01L21/02 ,  H01L29/34 ,  H01L29/66 ,  H01L29/872

Abstract: Provided is a single crystal diamond having a lowered dislocation density. The single crystal diamond (10) is provided with single crystal diamond layers (2, 3). One single crystal diamond layer (2) is formed on a diamond substrate (1) and contains point defects. The other single crystal diamond layer (3) is grown on the single crystal diamond layer (2). The single crystal diamond layers (2, 3) have a lower dislocation density than the diamond substrate.