公开(公告)号：US11522055B2

公开(公告)日：2022-12-06

申请号：US16962203

申请日：2019-01-11

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shinya Ohmagari ,  Hideaki Yamada ,  Hitoshi Umezawa ,  Nobuteru Tsubouchi ,  Akiyoshi Chayahara ,  Yoshiaki Mokuno ,  Akinori Seki ,  Fumiaki Kawai ,  Hiroaki Saitoh

IPC: H01L29/16 ,  C23C16/01 ,  C23C16/27 ,  C30B25/20 ,  C30B29/04 ,  H01L21/02 ,  H01L29/66 ,  H01L29/872

Abstract: A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm−1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

公开(公告)号：US12027440B2

公开(公告)日：2024-07-02

申请号：US17609919

申请日：2020-04-17

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takashi Matsumae ,  Hitoshi Umezawa ,  Yuuichi Kurashima ,  Hideki Takagi

IPC: H01L23/373 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16 ,  C30B33/06

CPC classification number: H01L23/3732 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16 ,  C30B33/06

Abstract: A composite that includes a base including an oxide layer MOx of an element M on a surface thereof and a diamond crystal base bonded to the surface of the base. The M is one or more selected from among metal elements capable of forming an oxide (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, Te, and Bi, and the diamond crystal base is bonded to the surface of the base by M-O—C bonding of at least some C atoms of the (111) surface of the diamond crystal base.