公开(公告)号：US20210066078A1

公开(公告)日：2021-03-04

申请号：US16962203

申请日：2019-01-11

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shinya OHMAGARI ,  Hideaki YAMADA ,  Hitoshi UMEZAWA ,  Nobuteru TSUBOUCHI ,  Akiyoshi CHAYAHARA ,  Yoshiaki MOKUNO ,  Akinori SEKI ,  Fumiaki KAWAI ,  Hiroaki SAITOH

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/872 ,  H01L29/66 ,  C30B29/04 ,  C30B25/20 ,  C23C16/27 ,  C23C16/01

Abstract: There is provided a novel stack that includes a single-crystal diamond substrate having a coalescence boundary, yet effectively uses the coalescence boundary. A stack comprising at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm−1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.