公开(公告)号：US20210066078A1

公开(公告)日：2021-03-04

申请号：US16962203

申请日：2019-01-11

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shinya OHMAGARI ,  Hideaki YAMADA ,  Hitoshi UMEZAWA ,  Nobuteru TSUBOUCHI ,  Akiyoshi CHAYAHARA ,  Yoshiaki MOKUNO ,  Akinori SEKI ,  Fumiaki KAWAI ,  Hiroaki SAITOH

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/872 ,  H01L29/66 ,  C30B29/04 ,  C30B25/20 ,  C23C16/27 ,  C23C16/01

Abstract: There is provided a novel stack that includes a single-crystal diamond substrate having a coalescence boundary, yet effectively uses the coalescence boundary. A stack comprising at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm−1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

公开(公告)号：US20240258195A1

公开(公告)日：2024-08-01

申请号：US18565295

申请日：2022-05-31

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  MITSUBISHI ELECTRIC CORPORATION

Inventor： Hideaki YAMADA ,  Akiyoshi CHAYAHARA ,  Yoshiaki MOKUNO ,  Takashi MATSUMAE ,  Yuuichi KURASHIMA ,  Eiji HIGURASHI ,  Hideki TAKAGI ,  Shuichi HIZA ,  Ken IMAMURA ,  Yusuke SHIRAYANAGI ,  Koji YOSHITSUGU ,  Kunihiko NISHIMURA

IPC: H01L23/373 ,  B32B9/00 ,  B32B9/04 ,  B32B37/18 ,  B32B38/00 ,  C30B29/04 ,  C30B29/40 ,  C30B33/00 ,  H01L23/00

CPC classification number: H01L23/3732 ,  B32B9/007 ,  B32B9/04 ,  B32B37/18 ,  C30B29/04 ,  C30B29/406 ,  C30B33/00 ,  H01L24/32 ,  H01L24/83 ,  B32B2038/0064 ,  B32B2457/14 ,  H01L2224/32225 ,  H01L2224/83005

Abstract: This bonded body (10) comprising a mosaic diamond wafer and a semiconductor of a different type is a bonded body in which a mosaic diamond wafer (1) having a coalescence boundary (B1) between a plurality of single-crystal diamond substrates (1A and 1B) and a semiconductor of a different type (2) are bonded together, in which a maximum level difference on a bonding surface (1aa) of the mosaic diamond wafer (1) with the semiconductor of a different type (2) is 10 nm or less.

公开(公告)号：US20240098866A1

公开(公告)日：2024-03-21

申请号：US18274422

申请日：2022-01-25

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Hideaki YAMADA ,  Akiyoshi CHAYAHARA ,  Yoshiaki MOKUNO

IPC: H05H1/00 ,  C23C16/511 ,  H05H1/46

CPC classification number: H05H1/01 ,  C23C16/511 ,  H05H1/4622

Abstract: A microwave plasma treatment device includes a resonator including a container; a single microwave oscillation source that outputs a reference microwave; a waveguide that connects the microwave oscillation source and the resonator to each other; and a phase control mechanism that generates a modified microwave having a phase different from a phase of the reference microwave by controlling the phase of the reference microwave. The resonator includes one or more first-type introducing portions for introducing the reference microwave into the resonator and one or more second-type introducing portions for introducing the modified microwave into the resonator, and the microwave plasma treatment device is configured such that at least one of a position, a size, and a shape of a plasma ball generated in the container is changed by superimposing the modified microwave on the reference microwave in the resonator.