公开(公告)号：US20210066078A1

公开(公告)日：2021-03-04

申请号：US16962203

申请日：2019-01-11

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shinya OHMAGARI ,  Hideaki YAMADA ,  Hitoshi UMEZAWA ,  Nobuteru TSUBOUCHI ,  Akiyoshi CHAYAHARA ,  Yoshiaki MOKUNO ,  Akinori SEKI ,  Fumiaki KAWAI ,  Hiroaki SAITOH

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/872 ,  H01L29/66 ,  C30B29/04 ,  C30B25/20 ,  C23C16/27 ,  C23C16/01

Abstract: There is provided a novel stack that includes a single-crystal diamond substrate having a coalescence boundary, yet effectively uses the coalescence boundary. A stack comprising at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm−1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

公开(公告)号：US20240149565A1

公开(公告)日：2024-05-09

申请号：US18550096

申请日：2022-02-18

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takashi MATSUMAE ,  Hideki TAKAGI ,  Hitoshi UMEZAWA ,  Yuuichi KURASHIMA ,  Eiji HIGURASHI

IPC: B32B18/00 ,  H01L23/373

CPC classification number: B32B18/00 ,  H01L23/3738

Abstract: There is provided a silicon carbide composite body that can be expected to have efficient heat conduction and electrical conduction between bonding base materials. The silicon carbide composite body includes a first base material including silicon carbide having a silicon oxide layer SiOx formed on the surface and a second base material which has an oxide layer MOy with an element M, which is one or more of metals that forms an oxide in the atmosphere (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, and C in diamond on the surface, and is bonded to the first base material such that the MOy side faces the SiOx side, and when at least some of C in silicon carbide forms C—O-M bonds and/or at least some of Si in the silicon carbide forms Si—O−M bonds, the second base material is bonded to the first base material.

公开(公告)号：US20220230934A1

公开(公告)日：2022-07-21

申请号：US17609919

申请日：2020-04-17

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takashi MATSUMAE ,  Hitoshi UMEZAWA ,  Yuuichi KURASHIMA ,  Hideki TAKAGI

IPC: H01L23/373 ,  C30B33/06 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16

Abstract: A composite that includes a base including an oxide layer MOx of an element M on a surface thereof and a diamond crystal base bonded to the surface of the base. The M is one or more selected from among metal elements capable of forming an oxide (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, Te, and Bi, and the diamond crystal base is bonded to the surface of the base by M-O-C bonding of at least some C atoms of the (111) surface of the diamond crystal base.