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公开(公告)号：US20230298847A1
公开(公告)日：2023-09-21
申请号：US18122388
申请日：2023-03-16
Inventor： Yung-Ho Alex Chuang , Yinying Xiao-Li , Edgardo García Berríos , John Fielden , Lavinia Ghirardini , Masayoshi Nagao
IPC: H01J37/073 , H01J37/28
CPC classification number: H01J37/073 , H01J37/28 , H01J2237/2812
Abstract: An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A contiguous TiN layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the TiN layer.
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公开(公告)号：US10943760B2
公开(公告)日：2021-03-09
申请号：US16568110
申请日：2019-09-11
Inventor： Yung-Ho Alex Chuang , Yinying Xiao-Li , Edgardo Garcia Berrios , John Fielden , Masayoshi Nagao
IPC: H01J37/073 , H01J37/28 , H01J37/317
Abstract: An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.
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公开(公告)号：US12051557B2
公开(公告)日：2024-07-30
申请号：US17609445
申请日：2020-03-23
Inventor： Katsuhisa Murakami , Masayoshi Nagao
CPC classification number: H01J1/308 , H01J1/312 , H01J2201/30461
Abstract: An electron emission device having a narrow electron energy range and excellent electron emitting efficiency, and an electron microscope using the electron emission device. An electron emission device having a laminated structure in which a first electrode, an electron accelerating layer made of an insulating film, and a second electrode are laminated in this order, in which the second electrode through which electrons transmit and from whose surface electrons emit, and the energy width of the emitted electrons is 100 meV or more and 600 meV or less. For example, graphene having one or more layers and 20 layers or less can be used as the second electrode, and hexagonal boron nitride can be used as the insulating film.
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公开(公告)号：US11887802B2
公开(公告)日：2024-01-30
申请号：US17912659
申请日：2021-03-16
Inventor： Katsuhisa Murakami , Masayoshi Nagao
CPC classification number: H01J1/312 , C23C16/342 , H01J1/90 , H01J9/027 , H01J2209/012
Abstract: Provided in the present disclosure is an electron emitting element 10 including a laminated structure in which a first electrode 1, an electron accelerating layer 6 made of an insulation film, a second electrode 3, and a cover film 7 are laminated in that order, in which the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface 5.
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