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公开(公告)号：US20200328682A1
公开(公告)日：2020-10-15
申请号：US16865008
申请日：2020-05-01
摘要： A current detecting GaN FET is disclosed. The current detecting GaN FET includes a first GaN switch having a first gate, a first drain, a first source, and a first field plate. The current detecting GaN FET also includes a second GaN switch having a second gate, a second drain, a second source, and a second field plate. The current detecting GaN FET also includes a resistor. The first and second gates are electrically connected, the first and second drains are electrically connected, and the resistor is connected between the first and second sources.
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公开(公告)号：US09929652B1
公开(公告)日：2018-03-27
申请号：US15373327
申请日：2016-12-08
CPC分类号： H02M3/158 , H01L23/3107 , H02M1/08 , H02M1/36 , H03K17/063 , H03K2217/0063 , H03K2217/0072 , H03K2217/0081
摘要： A power circuit is disclosed. The power circuit includes a power capacitor and a power resistor connected to the power capacitor. The power circuit also includes a power integrated circuit, including a GaN-based substrate, a power FET on the substrate, and a driver on the substrate. The driver is configured to charge a gate of the power FET using current from a power node. The power integrated circuit also includes a first power voltage regulator on the substrate, where the driver is configured to receive current from the capacitor through the resistor while the driver charges the gate of the power FET, and where the first power voltage regulator is configured to provide current to the capacitor while the driver does not charge the gate of the power FET.
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公开(公告)号：US09831867B1
公开(公告)日：2017-11-28
申请号：US15439785
申请日：2017-02-22
IPC分类号： H03L5/00 , H03K17/687 , H03K19/0175 , H01L29/20 , H02M3/158
CPC分类号： H03K19/017509 , H01L24/49 , H03K17/26 , H03K2217/0063 , H03K2217/0072
摘要： A half bridge GaN circuit is disclosed. The circuit includes a low side circuit, which has a low side switch, a low side switch driver configured to drive the low side switch, a first level shift circuit configured to receive a first level shift signal, and a second level shift circuit configured to generate a second level shift signal. The half bridge GaN circuit also includes a high side circuit, which has a high side switch configured to be selectively conductive according to a voltage level of a received high side switch signal, and a high side switch driver configured to generate the high side switch signal in response to the level shift signals. A transition in the voltage of the high side switch signal causes the high side switch driver to prevent additional transitions of the voltage level of the high side switch signal for a period of time.
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公开(公告)号：US20160372920A1
公开(公告)日：2016-12-22
申请号：US14743815
申请日：2015-06-18
发明人： Daniel M. Kinzer , Santosh Sharma , Jason Zhang , Marco Giandalia
CPC分类号： H02H9/046 , H01L27/0248 , H01L27/0266
摘要： An electronic circuit is disclosed and described herein. The circuit includes first and second pins, and an overvoltage protection circuit including a first enhancement-mode transistor. The overvoltage protection circuit is disposed on a GaN-based substrate, and the first enhancement mode transistor is configured to provide overvoltage protection between the first and second pins.
摘要翻译： 本文公开并描述了电子电路。 电路包括第一和第二引脚，以及包括第一增强型晶体管的过电压保护电路。 过电压保护电路设置在GaN基基板上，第一增强型晶体管被配置为在第一和第二引脚之间提供过电压保护。
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公开(公告)号：US20200044648A1
公开(公告)日：2020-02-06
申请号：US16554602
申请日：2019-08-28
IPC分类号： H03K17/687 , H03K3/037 , H03K19/0185 , H02M1/08
摘要： A half bridge GaN circuit is disclosed. The half bridge GaN circuit includes a first power node having a first power voltage, where the first power voltage is referenced to a switch voltage at the switch node. The half bridge GaN circuit also includes a VMID power node having a VMID power voltage, where the VMID power voltage is referenced to the first power voltage and is less than the first power voltage by a DC voltage. The half bridge GaN circuit also includes a logic circuit, where a negative power terminal of the logic circuit is connected to the VMID node, and where a positive power terminal of the first logic circuit is connected to the first power node, where the logic circuit is configured to generate a logic output voltage, which controls the conductivity of the high side power switch.
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公开(公告)号：US10404256B2
公开(公告)日：2019-09-03
申请号：US16260067
申请日：2019-01-28
IPC分类号： H03L5/00 , H03K19/0185 , H03K17/08 , H03K17/22 , H01L27/02 , H01L23/495 , G05F1/56 , H01L25/065 , H01L23/00
摘要： A half bridge GaN circuit is disclosed. The circuit includes a low side power switch configured to be selectively conductive according to one or more input signals, a high side power switch configured to be selectively conductive according to the one or more input signals, and a high side power switch controller, configured to control the conductivity of the high sigh power switch based on the one or more input signals. The high side power switch controller includes a capacitor, and a logic circuit, wherein the capacitor is configured to capacitively couple a signal based on the input signals to the logic circuit, and the logic circuit is configured to control the conductivity of the high sigh power switch based on the capacitively coupled signal.
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公开(公告)号：US11251709B2
公开(公告)日：2022-02-15
申请号：US16820405
申请日：2020-03-16
摘要： A circuit is disclosed. The circuit includes a current detecting FET, configured to generate a current signal indicative of the value of the current flowing therethrough, an operational transconductance amplifier (OTA) configured to output a current in response to the voltage of the current signal, and a resistor configured to receive the current and to generate a voltage in response to the received current, where the generated voltage is indicative of the value of the current flowing through the current detecting FET. The current detecting FET is configured to become nonconductive in response to the generated voltage indicating that the current flowing through the current detecting FET is greater than a threshold.
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公开(公告)号：US10778219B2
公开(公告)日：2020-09-15
申请号：US16554602
申请日：2019-08-28
IPC分类号： H03L5/00 , H03K17/687 , H03K3/037 , H03K19/0185 , H02M1/08 , H01L23/00 , H02M1/36
摘要： A half bridge GaN circuit is disclosed. The half bridge GaN circuit includes a first power node having a first power voltage, where the first power voltage is referenced to a switch voltage at the switch node. The half bridge GaN circuit also includes a VMID power node having a VMID power voltage, where the VMID power voltage is referenced to the first power voltage and is less than the first power voltage by a DC voltage. The half bridge GaN circuit also includes a logic circuit, where a negative power terminal of the logic circuit is connected to the VMID node, and where a positive power terminal of the first logic circuit is connected to the first power node, where the logic circuit is configured to generate a logic output voltage, which controls the conductivity of the high side power switch.
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公开(公告)号：US10666147B1
公开(公告)日：2020-05-26
申请号：US16378529
申请日：2019-04-08
摘要： A GaN resonant circuit is disclosed. The GaN resonant circuit includes a power switch configured to be selectively conductive according to one or more gate signals, and configured to generate a switch signal indicative of the value of the current flowing therethrough. The GaN resonant circuit also includes a power switch driver, configured to generate the gate signals in response to one or more control signals, where the power switch driver is configured to cause the power switch to become nonconductive in response to the switch signal indicating that the value of the current flowing through the power switch has transitioned across a threshold value.
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公开(公告)号：US10193554B1
公开(公告)日：2019-01-29
申请号：US15814317
申请日：2017-11-15
IPC分类号： H03L5/00 , H03K19/0185 , H03K17/08 , H03K17/22 , H01L27/02 , G05F1/56 , H01L23/495 , H01L23/00 , H01L25/065
摘要： A half bridge GaN circuit is disclosed. The circuit includes a low side power switch configured to be selectively conductive according to one or more input signals, a high side power switch configured to be selectively conductive according to the one or more input signals, and a high side power switch controller, configured to control the conductivity of the high sigh power switch based on the one or more input signals. The high side power switch controller includes a capacitor, and a logic circuit, wherein the capacitor is configured to capacitively couple a signal based on the input signals to the logic circuit, and the logic circuit is configured to control the conductivity of the high sigh power switch based on the capacitively coupled signal.
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