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    Nonvolatile memory cell
    2.
    发明授权
    Nonvolatile memory cell 失效
    非易失性存储单元

    公开(公告)号：US3651492A

    公开(公告)日：1972-03-21

    申请号：US3651492D

    申请日：1970-11-02

    申请人： NCR CO

    发明人： LOCKWOOD GEORGE C

    IPC分类号： G11C11/40 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/28 ,  H03K3/356 ,  G11C5/02

    CPC分类号： H03K3/356052 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/28 ,  H03K3/356008

    摘要： The present invention relates to a nonvolatile memory cell comprising two nonvolatile alterable threshold voltage field effect transistors. The drain electrodes of the two nonvolatile alterable threshold voltage field effect transistors are coupled through load transistors to a common negative power supply. Their gates are connected together and to an external source of negative pulses. Their sources are connected to circuits sensitive to current in the two alterable transistors. The first nonvolatile alterable threshold voltage field effect transistor is placed at a first threshold voltage, and the second alterable threshold voltage field effect transistor is placed at a second threshold voltage. The different threshold voltages set the nonvolatile memory cell in a one state or in a zero state. A current will first pass through the alterable threshold voltage field effect transistor having the less negative threshold voltage, before it passes through the alterable threshold field effect transistor having the more negative threshold voltage during the application of a negatively increasing gate voltage to both alterable threshold voltage field effect transistors. The state of the nonvolatile memory cell is thus determined by which nonvolatile alterable threshold voltage transistor conducts first.

    摘要翻译： 本发明涉及一种包括两个非易失性可变阈值电压场效应晶体管的非易失性存储单元。 两个非易失性可变阈值电压场效应晶体管的漏电极通过负载晶体管耦合到公共负电源。 它们的栅极连接在一起，并连接到负脉冲的外部源。 它们的源极连接到两个可变晶体管中对电流敏感的电路。 将第一非易失性可变阈值电压场效应晶体管置于第一阈值电压，并将第二可变阈值电压场效应晶体管置于第二阈值电压。 不同的阈值电压将非易失性存储单元设置在一个状态或零状态。 电流将首先通过具有较小负阈值电压的可变阈值电压场效应晶体管，之后，在将负增加的栅极电压施加到两个可变阈值电压时，其通过具有更负的阈值电压的可变阈值场效应晶体管 场效应晶体管。 因此，非易失性存储单元的状态由哪个非易失性可变阈值电压晶体管首先导通。

    Nonvolatile flip-flop memory cell
    3.
    发明授权
    Nonvolatile flip-flop memory cell 失效
    非易失性FLIP-FLOP MEMORY CELL

    公开(公告)号：US3676717A

    公开(公告)日：1972-07-11

    申请号：US3676717D

    申请日：1970-11-02

    申请人： NCR CO

    发明人： LOCKWOOD GEORGE C

    IPC分类号： G11C11/402 ,  G11C14/00 ,  H03K3/356 ,  H03K23/08

    CPC分类号： G11C11/4023 ,  G11C14/00 ,  H03K3/356008 ,  H03K3/356052

    摘要： The present invention relates to a nonvolatile flip-flop memory cell in which an alterable threshold voltage nonvolatile MNOS field effect transistor is connected to each bistable terminal of a volatile flip-flop circuit. The nonvolatile MNOS field effect transistors nonvolatilely retain the state of the volatile flipflop circuit during a power failure to the flip-flop circuit. During the power failure to the volatile flip-flop circuit, the threshold voltage of one of the nonvolatile MNOS field effect transistors is changed, to nonvolatilely retain the state of the volatile flip-flop circuit. The state of the flip-flop circuit is reset when power is restored, with the aid of the nonvolatile MNOS field effect transistors. When a power failure to the volatile flip-flop circuit is sensed, a high negative potential is applied to the gates of the nonvolatile MNOS transistors to change the threshold of the nonvolatile MNOS transistor which is connected to the zero potential terminal of the volatile flip-flop circuit. The state of the volatile flip-flop circuit is retained in said nonvolatile MNOS field effect transistors. The binary bit of information nonvolatilely stored in the nonvolatile memory cell is read back into the volatile flip-flop circuit when power is restored.