公开(公告)号：US20040142118A1

公开(公告)日：2004-07-22

申请号：US10751631

申请日：2004-01-06

Applicant: NEC CORPORATION

Inventor： Kazushige Takechi

IPC: C09K019/00

CPC classification number: H01L29/78603 ,  H01L2924/0002 ,  H05K1/0393 ,  H05K3/002 ,  H05K3/0058 ,  Y10T428/1014 ,  Y10T428/1086 ,  H01L2924/00

Abstract: A flexible electronic device excellent in heat liberation characteristics and toughness and a production method for actualizing thereof in low cost and with satisfactory reproducibility are provided. A protection film is adhered onto the surface of a substrate on which surface a thin film device is formed. Successively, the substrate is soaked in an etching solution to be etched from the back surface thereof so as for the residual thickness of the substrate to fall within the range larger than 0 nullm and not larger than 200 nullm. Then, a flexible film is adhered onto the etched surface of the substrate, and thereafter the protection film is peeled to produce a flexible electronic device.

Abstract translation: 提供了一种具有优异的热释放特性和韧性的柔性电子器件以及以低成本和令人满意的再现性实现其的制造方法。 保护膜附着在其上形成有薄膜器件的表面上的衬底的表面上。 接着，将基板浸渍在要从其背面蚀刻的蚀刻溶液中，以使基板的剩余厚度落入大于0μm且不大于200μm的范围内。 然后，将柔性膜粘附到基板的蚀刻表面上，然后剥离保护膜以制造柔性电子器件。

公开(公告)号：US20010010370A1

公开(公告)日：2001-08-02

申请号：US09745657

申请日：2000-12-20

Applicant: NEC Corporation

Inventor： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC: H01L021/00 ,  H01L031/036

CPC classification number: G02F1/134363

Abstract: An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and nnull amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the nnull amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Abstract translation: 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤1中，在玻璃板上形成扫描线和从扫描线延伸的栅电极。 在步骤2中，层叠由非晶硅层和n +非晶硅层构成的栅极绝缘层和半导体层，为TFT部分提供半导体层。 在步骤3中，层叠透明导电层和金属层，形成信号线，从信号线延伸的漏极，从像素电极延伸的像素电极和源电极，并且n +非晶硅层 通过蚀刻去除通道间隙。 在步骤4中，形成保护绝缘层，通过蚀刻除去保护绝缘层和像素电极上方的金属层。