公开(公告)号：US20020167636A1

公开(公告)日：2002-11-14

申请号：US10144630

申请日：2002-05-13

Applicant: NEC CORPORATION

Inventor： Kyounei Yasuda ,  Satoshi Ihida

IPC: G02F001/1339

CPC classification number: G02F1/13394

Abstract: An active-matrix addressing LCD device that suppresses effectively the off leakage current induced by the charge-up of the spacers placed over the TFTs. The device comprises (a) a first substrate having switching elements; (b) a second substrate coupled with the first substrate in such a way as to form a gap with spacers between the first and second substrates; the spacers being distributed in the gap; (c) a liquid crystal confined in the gap; and (d) protrusions formed in overlapping areas with the switching elements; each of the protrusions being protruded in a direction that narrows the gap. The spacers distributed in the gap are likely to be shifted away from the overlapping areas due to the protrusions.

Abstract translation: 一种有源矩阵寻址LCD器件，其有效地抑制由放置在TFT上的间隔物的电荷引起的关断漏电流。 该装置包括（a）具有开关元件的第一基板; （b）第二基板，以与第一和第二基板之间的间隔物形成间隙的方式与第一基板连接; 间隔物分布在间隙中; （c）限定在间隙中的液晶; 和（d）与开关元件重叠的区域形成的突起; 每个突起沿使间隙变窄的方向突出。 分布在间隙中的间隔物可能由于突起而偏离重叠区域。

公开(公告)号：US20030030768A1

公开(公告)日：2003-02-13

申请号：US10205365

申请日：2002-07-26

Applicant: NEC Corporation

Inventor： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kaazurou Saeki

IPC: G02F001/1335

CPC classification number: G02F1/133555 ,  G02F1/133504 ,  G02F1/136227 ,  G02F2001/136236

Abstract: In a transflective type LCD provided with a transparent region and a reflection region in each pixel, when an irregular film 11 is formed on an active matrix substrate 12 to form irregularities of a reflection electrode film 6, the irregular film 11 is specifically formed to almost the same film thickness in both the transparent region and the reflection region to provide substantially the same inter-substrate gap in these two regions so that they may have almost the same V-T characteristics and also the reflection electrode film 6 made of Al/Mo is formed so as to overlap with a transmission electrode film 5 made of ITO all around an outer periphery of the transmission electrode film 5 by a width of at least 2 nullm, thus suppressing electric erosion from occurring between the ITO and Al substances at the edge of the transmission electrode film 5.

Abstract translation: 在每个像素中设置有透明区域和反射区域的半透射型LCD中，当在有源矩阵基板12上形成不规则膜11以形成反射电极膜6的凹凸时，不规则膜11特别形成为几乎 在透明区域和反射区域中具有相同的膜厚度，以在这两个区域中提供基本上相同的基板间间隙，使得它们可以具有几乎相同的VT特性，并且还形成由Al / Mo制成的反射电极膜6 以便与透明电极膜5的外周附近的由ITO制成的透射电极膜5重叠至少2μm的宽度，从而抑制在ITO的边缘处的ITO和Al物质之间的电侵蚀 透射电极膜5。

公开(公告)号：US20030081160A1

公开(公告)日：2003-05-01

申请号：US10282179

申请日：2002-10-29

Applicant: NEC Corporation

Inventor： Satoshi Ihida ,  Masaki Shinohara ,  Manabu Oyama

IPC: G02F001/1335

CPC classification number: G02F1/1362 ,  G02F1/133553 ,  G02F1/133555

Abstract: In a semi-transmission type liquid crystal display and a method for fabricating the same, a reflective electrode such as aluminum layer and a transparent electrode such as ITO film are used to form a pixel electrode that is provided on an organic film having an uneven surface. In order to effectively restrict the battery effect between a reflective electrode and a transparent electrode, a surface of the organic film is put in a plasma-processing and then is washed by a washing liquid. Thereafter, the transparent electrode is formed and then the reflective electrode such as a double layer electrode of the aluminum layer and the molybdenum layer are formed.

Abstract translation: 在半透射型液晶显示器及其制造方法中，使用诸如铝层的反射电极和诸如ITO膜的透明电极来形成设置在具有不平坦表面的有机膜上的像素电极 。 为了有效地限制反射电极和透明电极之间的电池效应，将有机膜的表面进行等离子体处理，然后用洗涤液洗涤。 此后，形成透明电极，然后形成诸如铝层的双层电极和钼层的反射电极。

公开(公告)号：US20010040646A1

公开(公告)日：2001-11-15

申请号：US09738530

申请日：2000-12-15

Applicant: NEC Corporation

Inventor： Takahisa Hannuki ,  Shinichi Nishida ,  Satoshi Ihida ,  Shouichi Kuroha ,  Ryuji Takahashi ,  Satoshi Miura

IPC: G02F001/136 ,  G02F001/1343

CPC classification number: G02F1/134363

Abstract: The present invention provides a liquid crystal display apparatus of a lateral direction electric field drive type comprising an array substrate including a plurality of TFTs each having a gate electrode, a gate insulation film, a semiconductor layer, and a source electrode/drain electrode formed on a transparent substrate and an opposing substrate arrange so as to oppose to the array substrate, wherein the semiconductor layer has a width in the gate length direction identical to the gate length.

Abstract translation: 本发明提供一种横向电场驱动型的液晶显示装置，其包括阵列基板，该阵列基板包括多个TFT，每个TFT具有栅电极，栅极绝缘膜，半导体层和源电极/漏极，形成于 透明基板和相对的基板布置成与阵列基板相对，其中半导体层具有与栅极长度相同的栅极长度方向的宽度。

公开(公告)号：US20010010370A1

公开(公告)日：2001-08-02

申请号：US09745657

申请日：2000-12-20

Applicant: NEC Corporation

Inventor： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC: H01L021/00 ,  H01L031/036

CPC classification number: G02F1/134363

Abstract: An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and nnull amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the nnull amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Abstract translation: 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤1中，在玻璃板上形成扫描线和从扫描线延伸的栅电极。 在步骤2中，层叠由非晶硅层和n +非晶硅层构成的栅极绝缘层和半导体层，为TFT部分提供半导体层。 在步骤3中，层叠透明导电层和金属层，形成信号线，从信号线延伸的漏极，从像素电极延伸的像素电极和源电极，并且n +非晶硅层 通过蚀刻去除通道间隙。 在步骤4中，形成保护绝缘层，通过蚀刻除去保护绝缘层和像素电极上方的金属层。