Active matrix substrate and manufacturing method therefor

    公开(公告)号:US20040084672A1

    公开(公告)日:2004-05-06

    申请号:US10617035

    申请日:2003-07-11

    Abstract: An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer (102 of FIG. 6) and a TFF area. A drain electrode layer (106 of FIG. 6) is formed by a first passivation film (105 of FIG. 6) via a first passivation film (105 of FIG. 6) formed as an upper layer. In a second passivation film (107 of FIG. 6) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO (108 of FIG. 6) provided as an uppermost layer. A storage capacitance unit, comprised of the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is provided in the pixel electrode.

    Method of fabricating liquid crystal display device
    3.
    发明申请
    Method of fabricating liquid crystal display device 有权
    制造液晶显示装置的方法

    公开(公告)号:US20040085489A1

    公开(公告)日:2004-05-06

    申请号:US10692736

    申请日:2003-10-27

    Abstract: The method of fabricating a liquid crystal display device includes the steps of (a) fabricating a switching device on a substrate, (b) forming an interlayer insulating film on the substrate such that the switching device is covered with the interlayer insulating film, and (c) forming a transparent electrode on the interlayer insulating film, the transparent electrode being electrically connected to the switching device through the interlayer insulating film, the step (c) including (c1) depositing electrically conductive, transparent and amorphous material on the interlayer insulating film, (c2) patterning the material into the transparent electrode, and (c3) turning the transparent electrode into polysilicon by thermal annealing carried out after formation of an alignment film.

    Abstract translation: 制造液晶显示装置的方法包括以下步骤:(a)在基板上制造开关装置,(b)在基板上形成层间绝缘膜,使得开关装置被层间绝缘膜覆盖,以及( c)在层间绝缘膜上形成透明电极,透明电极通过层间绝缘膜与开关器件电连接,步骤(c)包括(c1)在层间绝缘膜上沉积导电,透明和非晶材料 ,(c2)将材料图案化成透明电极,(c3)通过在形成取向膜之后进行的热退火将透明电极转换成多晶硅。

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