公开(公告)号：US20190027359A9

公开(公告)日：2019-01-24

申请号：US15965014

申请日：2018-04-27

申请人： NGK INSULATORS, LTD.

发明人： Mikiya ICHIMURA ,  Sota MAEHARA ,  Yoshitaka KURAOKA

IPC分类号： H01L21/02 ,  C23C16/34 ,  C30B29/40 ,  C30B19/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/66

CPC分类号： H01L21/02389 ,  C23C16/303 ,  C23C16/34 ,  C30B19/02 ,  C30B29/406 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/205 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/401 ,  H01L29/66007 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/812

摘要： Provided is an epitaxial substrate for semiconductor elements which suppresses an occurrence of current collapse. The epitaxial substrate for the semiconductor elements includes: a semi-insulating free-standing substrate formed of GaN being doped with Zn; a buffer layer being adjacent to the free-standing substrate; a channel layer being adjacent to the buffer layer; and a barrier layer being provided on an opposite side of the buffer layer with the channel layer therebetween, wherein the buffer layer is a diffusion suppressing layer that suppresses diffusion of Zn from the free-standing substrate into the channel layer.

公开(公告)号：US20180294336A1

公开(公告)日：2018-10-11

申请号：US15962300

申请日：2018-04-25

申请人： NGK INSULATORS, LTD.

发明人： Mikiya ICHIMURA ,  Sota MAEHARA ,  Yoshitaka KURAOKA

IPC分类号： H01L29/20 ,  H01L21/02 ,  H01L29/66 ,  H01L29/778 ,  H01L29/205 ,  C30B29/38

摘要： Provided is an epitaxial substrate for semiconductor elements which suppresses leakage current and has high breakdown voltage. An epitaxial substrate for semiconductor elements includes: a semi-insulating free-standing substrate formed of GaN being doped with Zn; a buffer layer formed of group 13 nitride to be adjacent to the free-standing substrate; a channel layer formed of group 13 nitride to be adjacent to the buffer layer; and a barrier layer formed of group 13 nitride on an opposite side of the buffer layer with the channel layer therebetween, wherein part of a first region consisting of the free-standing substrate and the buffer layer is a second region containing Si at a concentration of 1×1017 cm−3 or more, and a minimum value of a concentration of Zn in the second region is 1×1017 cm−3.

公开(公告)号：US20130026488A1

公开(公告)日：2013-01-31

申请号：US13644651

申请日：2012-10-04

申请人： NGK Insulators, Ltd.

发明人： Makoto MIYOSHI ,  Shigeaki SUMIYA ,  Mikiya ICHIMURA ,  Sota MAEHARA ,  Mitsuhiro TANAKA

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L29/155 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02507 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base substrate thereof. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer including a plurality of composition modulation layers each formed of a first composition layer made of AlN and a second composition layer made of AlxGa1-xN (0≦x x(n) is satisfied, where n represents the number of laminations of each of the first and the second composition layer, and x(i) represents the value of x in i-th one of the second composition layers as counted from the base substrate side. Each of the second composition layers is formed so as to be in a coherent state relative to the first composition layer.

摘要翻译： 本发明提供一种无硅外延基板，其具有优良的击穿电压特性，其中使用硅基板作为其基底。 外延衬底包括：（111）单晶Si衬底和包括多个组成调制层的缓冲层，每个组成调制层由由AlN制成的第一组成层和由Al x Ga 1-x N（0＆amp; ）交替层压。 x（1）≥x（2）≥的关系。 。 。 ≧x（n-1）≥x（n）和x（1）> x（n），其中n表示第一和第二组合物层中的每一个的叠层数，x（i） 从基底侧计数的第i组合物层中的第i个的x值。 每个第二组合物层相对于第一组合物层形成为相干状态。

公开(公告)号：US20180247809A1

公开(公告)日：2018-08-30

申请号：US15965014

申请日：2018-04-27

申请人： NGK INSULATORS, LTD.

发明人： Mikiya ICHIMURA ,  Sota MAEHARA ,  Yoshitaka KURAOKA

IPC分类号： H01L21/02 ,  C23C16/34 ,  C30B29/40 ,  C30B19/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/66

CPC分类号： H01L21/02389 ,  C23C16/303 ,  C23C16/34 ,  C30B19/02 ,  C30B29/406 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/205 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/401 ,  H01L29/66007 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/812

摘要： Provided is an epitaxial substrate for semiconductor elements which suppresses an occurrence of current collapse. The epitaxial substrate for the semiconductor elements includes: a semi-insulating free-standing substrate formed of GaN being doped with Zn; a buffer layer being adjacent to the free-standing substrate; a channel layer being adjacent to the buffer layer; and a barrier layer being provided on an opposite side of the buffer layer with the channel layer therebetween, wherein the buffer layer is a diffusion suppressing layer that suppresses diffusion of Zn from the free-standing substrate into the channel layer.

公开(公告)号：US20130181327A1

公开(公告)日：2013-07-18

申请号：US13789993

申请日：2013-03-08

申请人： NGK INSULATORS, LTD.

发明人： Makoto MIYOSHI ,  Mikiya ICHIMURA ,  Sota MAEHARA ,  Mitsuhiro TANAKA

IPC分类号： H01L29/06 ,  H01L21/02

CPC分类号： H01L29/0661 ,  C23C16/303 ,  C30B23/025 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02365 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02507 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/155 ,  H01L29/2003

摘要： Provided is a crack-free epitaxial substrate having a small amount of dislocations in which a silicon substrate is used as a base substrate. An epitaxial substrate includes a substrate made of (111) single crystal silicon and a base layer group in which a plurality of base layers are laminated. Each of the plurality of base layers includes a first group-III nitride layer made of AlN and a second group-III nitride layer made of AlyyGazzN formed on the first group-III nitride layer. The first group-III nitride layer has many crystal defects. An interface between the first and second group-III nitride layers is a three-dimensional concavo-convex surface. In the base layer other than the base layer formed immediately above the base substrate, the first group-III nitride layer has a thickness of 50 nm or more and 100 nm or less and the second group-III nitride layer satisfies 0≦yy≦0.2.

摘要翻译： 本发明提供一种具有少量位错的无裂纹的外延衬底，其中使用硅衬底作为基底。 外延衬底包括由（111）单晶硅制成的衬底和层叠有多个基底层的基底层组。 多个基层中的每一个包括由AlN制成的第一III族氮化物层和形成在第一III族氮化物层上的由AllyGazzN制成的第二III族氮化物层。 第一III族氮化物层具有许多晶体缺陷。 第一和第二III族氮化物层之间的界面是三维凹凸表面。 在基底层正上方形成的基底层以外的基底层中，第一III族氮化物层的厚度为50nm以上且100nm以下，第二III族氮化物层满足0≤yy≤0.2 。

公开(公告)号：US20130092953A1

公开(公告)日：2013-04-18

申请号：US13705554

申请日：2012-12-05

申请人： NGK Insulators, Ltd.

发明人： Makoto MIYOSHI ,  Shigeaki SUMIYA ,  Mikiya ICHIMURA ,  Sota MAEHARA ,  Mitsuhiro TANAKA

IPC分类号： H01L29/20 ,  H01L21/02

CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/1029 ,  H01L29/155 ,  H01L29/7787

摘要： Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer formed of a plurality of lamination units being continuously laminated. The lamination unit includes: a composition modulation layer formed of a first and a second unit layer having different compositions being alternately and repeatedly laminated such that a compressive strain exists therein; a termination layer formed on an uppermost portion of the composition modulation layer, the termination layer acting to maintain the compressive strain existing in the composition modulation layer; and a strain reinforcing layer formed on the termination layer, the strain reinforcing layer acting to enhance the compressive strain existing in the composition modulation layer.

摘要翻译： 提供了具有少量翘曲的无裂纹外延基板，其中使用硅基板作为基底。 外延衬底包括：（111）单晶Si衬底和由多个层压单元形成的缓冲层，其被连续层压。 层压单元包括：由具有不同组成的第一单元层和第二单元层形成的组成调制层，其交替重复层压，使其中存在压缩应变; 形成在所述组合物调制层的最上部的终止层，所述终止层用于保持存在于所述组成调制层中的压缩应变; 以及在所述端接层上形成的应变增强层，所述应变增强层用于增强存在于所述组成调制层中的压缩应变。

公开(公告)号：US20240359141A1

公开(公告)日：2024-10-31

申请号：US18769525

申请日：2024-07-11

申请人： NGK INSULATORS, LTD.

发明人： Kazuki IIDA ,  Yukinari SHIBAGAKI ,  Kosuke NAKAGAWA ,  Sota MAEHARA ,  Hirofumi KAN

IPC分类号： B01D69/04 ,  B01D39/20 ,  B01D71/02

CPC分类号： B01D69/04 ,  B01D39/2068 ,  B01D71/024 ,  B01D2201/291

摘要： A membrane assembly is configured to be housed in a tubular housing. The membrane assembly includes a columnar membrane structure, an annular first flange surrounding a first end portion of the membrane structure, a first intermediate portion arranged between a first end surface of the membrane structure and the housing, and a first bonding material interposed between the first flange and the membrane structure and between the first intermediate portion and the membrane structure.

公开(公告)号：US20200144373A1

公开(公告)日：2020-05-07

申请号：US16733320

申请日：2020-01-03

申请人： NGK INSULATORS, LTD.

发明人： Mikiya ICHIMURA ,  Sota MAEHARA ,  Yoshitaka KURAOKA

IPC分类号： H01L29/20 ,  H01L29/778 ,  H01L29/66 ,  H01L29/205 ,  H01L21/02 ,  C30B29/38 ,  C30B25/02 ,  C30B29/40 ,  H01L29/36 ,  C23C16/30

摘要： An epitaxial substrate for semiconductor elements suppresses leakage current and has a high breakdown voltage. The epitaxial substrate for semiconductor elements includes: a semi-insulating free-standing substrate formed of GaN doped with Zn; a buffer layer formed of a group 13 nitride adjacent to the free-standing substrate; a channel layer formed of a group 13 nitride adjacent to the buffer layer; and a barrier layer formed of a group 13 nitride on an opposite side of the buffer layer with the channel layer therebetween, wherein part of a first region consisting of the free-standing substrate and the buffer layer is a second region containing Si at a concentration of 1×1017cm−3 or more, and a minimum value of a concentration of Zn in the second region is 1×1017cm−3.

公开(公告)号：US20130043488A1

公开(公告)日：2013-02-21

申请号：US13658293

申请日：2012-10-23

申请人： NGK Insulators, Ltd.

发明人： Makoto MIYOSHI ,  Shigeaki SUMIYA ,  Mikiya ICHIMURA ,  Sota MAEHARA ,  Mitsuhiro TANAKA

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L21/02381 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02507 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205

摘要： Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base. The epitaxial substrate includes a (111) single crystal Si substrate and a buffer layer including a plurality of first lamination units. Each of those units includes a composition modulation layer formed of a first composition layer made of AlN and a second composition layer made of AlxGa1-xN being alternately laminated, and a first intermediate layer made of AlyGa1-yN (0≦y≦1). The relationship of x(1)≧x(2)≧ . . . ≧x(n−1)≧x(n) and x(1)≧x(n) is satisfied, where n represents the number of laminations of each of the first and second composition layers, and x(i) represents the value of x in i-th one of the second composition layers as counted from the base substrate side. The second composition layer is coherent to the first composition layer, and the first intermediate layer is coherent to the composition modulation layer.

摘要翻译： 本发明提供一种无硅外延基板，其以硅基板为基体，具有优异的击穿电压特性。 外延衬底包括（111）单晶Si衬底和包括多个第一层压单元的缓冲层。 这些单元中的每一个包括由AlN制成的第一组合物层和由Al x Ga 1-x N交替层压的第二组合物层和由Al y Ga 1-y N（0＆lt; 1，y＆n 1; 1）制成的第一中间层形成的组成调制层。 x（1）≥x（2）≥的关系。 。 。 ≧x（n-1）≥X（n）和x（1）≧x（n），其中n表示第一和第二组合物层中的每一个的叠层数，x（i） 从基底侧计数的第二组合物层的第i个中的x。 第二组合物层与第一组合物层相干，第一中间层与组成调制层相干。

公开(公告)号：US20130020583A1

公开(公告)日：2013-01-24

申请号：US13627206

申请日：2012-09-26

申请人： NGK Insulators, Ltd.

发明人： Makoto MIYOSHI ,  Shigeaki SUMIYA ,  Mikiya ICHIMURA ,  Sota MAEHARA ,  Mitsuhiro TANAKA

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L29/045 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7787

摘要： Provided is a crack-free epitaxial substrate. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer formed of a first and a second lamination unit being alternately laminated such that each of an uppermost and a lowermost portion of the buffer layer is formed of the first lamination unit. The first lamination unit is formed of a first and a second composition layer having different compositions being alternately laminated so as to increase the thickness of the second composition layer in a portion more distant from the base substrate side, to thereby cause a compressive strain to exist in the first lamination unit such that it increases in a portion more distant from the base substrate. The second lamination unit is formed as an intermediate layer that is substantially strain-free and formed with a thickness of 15 nm or more and 150 nm or less.

摘要翻译： 提供了一种无裂纹的外延衬底。 外延衬底包括：（111）单晶Si衬底和由第一和第二层压单元形成的缓冲层交替层叠，使得缓冲层的最上部分和最下部分由第一层压单元形成 。 第一层压单元由具有不同组成的第一和第二组合物层交替层叠形成，以便在远离基底侧的部分增加第二组合物层的厚度，从而导致压应变存在 在第一层压单元中使得其在远离基底的部分增加。 第二层压单元形成为基本上无应变的中间层，并形成为15nm以上且150nm以下的厚度。