公开(公告)号：US11101404B2

公开(公告)日：2021-08-24

申请号：US16354056

申请日：2019-03-14

Applicant: NICHIA CORPORATION

Inventor： Yoshinori Miyamoto ,  Tokutaro Okabe ,  Yuya Kagoshima ,  Keisuke Higashitani ,  Chiaki Ozaki

IPC: H01L33/20 ,  H01L33/12 ,  H01L33/32 ,  H01L33/06 ,  H01L33/00

Abstract: A method for manufacturing a semiconductor device includes: preparing a wafer including sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 μm higher or lower than the first region; and forming a semiconductor layer at the upper surface, the semiconductor layer including at least one layer that comprises AlzGa1−zN (0.03≤z≤0.15).