公开(公告)号：US11735686B2

公开(公告)日：2023-08-22

申请号：US17113583

申请日：2020-12-07

Applicant: NICHIA CORPORATION

Inventor： Yoshiki Inoue ,  Shun Kitahama ,  Yoshiyuki Aihara ,  Yoshiki Matsushita ,  Keisuke Higashitani

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/22 ,  H01L33/507 ,  H01L2933/0041

Abstract: A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

公开(公告)号：US12243954B2

公开(公告)日：2025-03-04

申请号：US18343078

申请日：2023-06-28

Applicant: NICHIA CORPORATION

Inventor： Yoshiki Inoue ,  Shun Kitahama ,  Yoshiyuki Aihara ,  Yoshiki Matsushita ,  Keisuke Higashitani

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/50

Abstract: A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

公开(公告)号：US10461222B2

公开(公告)日：2019-10-29

申请号：US15691551

申请日：2017-08-30

Applicant: NICHIA CORPORATION

Inventor： Makoto Abe ,  Keisuke Higashitani ,  Naoki Azuma ,  Akiyoshi Kinouchi

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/16

Abstract: A light-emitting element includes: a sapphire substrate having a c-plane at a main surface thereof; and a semiconductor layer provided at the main surface side of the sapphire substrate. The sapphire substrate includes a first unit including a first region, a second region, and a third region, wherein, when viewed from the main surface side, the three regions together have a shape of a regular hexagon that is evenly divided into the three regions such that each region has a shape of a rhombus; and a plurality of second units disposed to be aligned with each side of the first unit, the second unit having mirror symmetry relative to the first unit. The first unit and the second units are arranged to make a space at the center of the unit.

公开(公告)号：US11101404B2

公开(公告)日：2021-08-24

申请号：US16354056

申请日：2019-03-14

Applicant: NICHIA CORPORATION

Inventor： Yoshinori Miyamoto ,  Tokutaro Okabe ,  Yuya Kagoshima ,  Keisuke Higashitani ,  Chiaki Ozaki

IPC: H01L33/20 ,  H01L33/12 ,  H01L33/32 ,  H01L33/06 ,  H01L33/00

Abstract: A method for manufacturing a semiconductor device includes: preparing a wafer including sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 μm higher or lower than the first region; and forming a semiconductor layer at the upper surface, the semiconductor layer including at least one layer that comprises AlzGa1−zN (0.03≤z≤0.15).

公开(公告)号：US09773946B2

公开(公告)日：2017-09-26

申请号：US15044868

申请日：2016-02-16

Applicant: NICHIA CORPORATION

Inventor： Makoto Abe ,  Keisuke Higashitani ,  Naoki Azuma ,  Akiyoshi Kinouchi

IPC: H01L33/22 ,  H01L33/16

CPC classification number: H01L33/22 ,  H01L33/16

Abstract: A light-emitting element includes: a sapphire substrate having a c-plane at a main surface thereof; and a semiconductor layer provided at the main surface side of the sapphire substrate. The sapphire substrate includes a first unit including a first region, a second region, and a third region, wherein, when viewed from the main surface side, the three regions together have a shape of a regular hexagon that is evenly divided into the three regions such that each region has a shape of a rhombus; and a plurality of second units disposed to be aligned with each side of the first unit, the second unit having mirror symmetry relative to the first unit. The first unit and the second units are arranged to make a space at the center of the unit.