公开(公告)号：US20240047943A1

公开(公告)日：2024-02-08

申请号：US18363891

申请日：2023-08-02

Applicant: NICHIA CORPORATION

Inventor： Hisashi OGAWA ,  Masaki OMORI

IPC: H01S5/10 ,  H01S5/20 ,  H01S5/12

CPC classification number: H01S5/1014 ,  H01S5/20 ,  H01S5/12 ,  H01S5/34346

Abstract: A semiconductor laser element includes a substrate, and a semiconductor layer portion disposed on the substrate and including a waveguide including an active layer. The waveguide includes a wide portion including a first diffraction grating, and a narrow portion that has a narrower waveguide width than the wide portion and through which light generated in the active layer propagates in a transverse multimode. The waveguide includes a first end surface including an end surface of the narrow portion, and a second end surface located on a side opposite to the first end surface. The wide portion is continuously connected to the narrow portion, and includes a first region having a waveguide width increasing from the first end surface side toward the second end surface side.

公开(公告)号：US20220121083A1

公开(公告)日：2022-04-21

申请号：US17486917

申请日：2021-09-28

Applicant: NICHIA CORPORATION

Inventor： Hisashi OGAWA ,  Masayuki KATSURAGAWA

IPC: G02F1/35

Abstract: A laser device includes a light source configured to emit a laser light, a first mirror and a second mirror constituting a resonator where a laser light emitted from the light source enters, a nonlinear optical medium located between the first mirror and the second mirror, and a dispersive medium of adjustable effective optical thickness located between the nonlinear optical medium and at least one of the first mirror and the second mirror.

公开(公告)号：US20200335941A1

公开(公告)日：2020-10-22

申请号：US16849307

申请日：2020-04-15

Applicant: NICHIA CORPORATION

Inventor： Tetsushi TAKANO ,  Hisashi OGAWA ,  Hidetoshi KATORI ,  Masao TAKAMOTO

IPC: H01S5/14 ,  H01S5/323 ,  H01S5/028

Abstract: An external-cavity semiconductor laser includes a semiconductor laser element containing a gallium nitride material, a first lens disposed in an optical path of light emitted from the semiconductor laser element, a wavelength selective element disposed in an optical path of light transmitted through the first lens and configured to selectively transmit light having a predetermined wavelength, a second lens disposed in an optical path of light transmitted through the wavelength selective element, an output coupler disposed in an optical path of light condensed through the second lens, and a light-transmissive protective member bonded to at least one surface of the output coupler. The second lens is configured to cause light transmitted through the second lens and incident on the output coupler to form an image on a surface of the output coupler. The protective member covers the surface of the output coupler on which the image is formed.

公开(公告)号：US20240213745A1

公开(公告)日：2024-06-27

申请号：US18392438

申请日：2023-12-21

Applicant: NICHIA CORPORATION

Inventor： Hidenori MATSUO ,  Norihiro DEJIMA ,  Hisashi OGAWA

IPC: H01S5/40 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/14

CPC classification number: H01S5/4012 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/141

Abstract: A wavelength beam combining device includes: a plurality of light source devices; and a diffraction grating configured to perform wavelength beam combining of a plurality of laser beams emitted from the plurality of light source devices. At least one of the plurality of light source devices includes: a first light source unit including: a first external resonator formed by a first wavelength selection element and a first resonator mirror, a first light source, and a first internal optical path adjusting element, a second light source unit including: a second external resonator formed by the first wavelength selection element and a second resonator mirror, a second light source, and a second internal optical path adjusting element, a first external optical path adjusting element, and a second external optical path adjusting element.

公开(公告)号：US20250118947A1

公开(公告)日：2025-04-10

申请号：US18910147

申请日：2024-10-09

Applicant: NICHIA CORPORATION

Inventor： Ryohei HIROSE ,  Shingo MASUI ,  Hisashi OGAWA

IPC: H01S5/042 ,  H01S5/12 ,  H01S5/22

Abstract: A semiconductor laser element includes a semiconductor multilayer portion including an active layer, the semiconductor multilayer portion including (i) a first region including a diffraction grating and (ii) a second region configured to cause laser light to propagate in multiple transverse modes in the second region, the second region including a core region and cladding regions provided on two opposite sides of the core region; at least one electrode disposed on the semiconductor multilayer portion; and a current shielding structure. The semiconductor laser element has a waveguide structure. In a top view, the first region includes a central region where light entering from the second region is propagated and a peripheral region located outward of the central region. In a top view, the current shielding structure is located at a position at least partially overlapping the peripheral region.

公开(公告)号：US20240364078A1

公开(公告)日：2024-10-31

申请号：US18648297

申请日：2024-04-26

Applicant: NICHIA CORPORATION

Inventor： Hisashi OGAWA

IPC: H01S5/12 ,  H01S5/22

CPC classification number: H01S5/12 ,  H01S5/22 ,  H01S2301/166

Abstract: A transverse multimode semiconductor laser element includes: a semiconductor layered portion that includes an active layer and has a waveguide structure, wherein the semiconductor layered portion includes: a first region that includes a first diffraction grating and has a refractive index n1, and a second region that includes a first core region having a refractive index n21 and a plurality of first cladding regions having a refractive index n22 respectively provided on opposite sides of the first core region, and allows a laser beam to propagate in a plurality of transverse modes. The laser beam emitted from the second region propagates through the first region at a maximum diffusion angle θmax1 determined by the refractive index n1, the refractive index n21, and the refractive index n22.

公开(公告)号：US20220271500A1

公开(公告)日：2022-08-25

申请号：US17741036

申请日：2022-05-10

Applicant: NICHIA CORPORATION

Inventor： Tetsushi TAKANO ,  Hisashi OGAWA

IPC: H01S5/06 ,  H01S5/024 ,  H01S5/183

Abstract: A vertical external-cavity surface-emitting laser includes: a resonator comprising at least two mirrors; a semiconductor laser medium disposed in the resonator; and a Q switch provided in the resonator.

公开(公告)号：US20250035842A1

公开(公告)日：2025-01-30

申请号：US18714074

申请日：2022-11-24

Applicant: NICHIA CORPORATION

Inventor： Masanori OKADA ,  Hisashi OGAWA

IPC: G02B6/125 ,  G02B6/12

Abstract: An optical circuit includes a resonator and an optical waveguide that includes a ridge formed upon substrate or a semiconductor layer. The resonator has a light circulating surface and is disposed such that part of the light circulating surface faces the upper surface of the ridge, across a first gap. The distance between part of the light circulating surface and the upper surface of the ridge facing the part of the light circulating surface is shorter than the distance that an evanescent wave protrudes.

公开(公告)号：US20220255283A1

公开(公告)日：2022-08-11

申请号：US17626789

申请日：2020-06-19

Applicant: NICHIA CORPORATION

Inventor： Masayuki KATSURAGAWA ,  Tetsushi TAKANO ,  Hisashi OGAWA

IPC: H01S3/10 ,  G02F1/11 ,  H01S5/02208 ,  H01S5/065

Abstract: A Q switch resonator includes: an optical resonator comprising at least two mirrors, and configured to accumulate power of a continuous wave or an intermittent continuous wave incident from an outside; and a switching element provided in the optical resonator. The switching element is configured such that, when the power accumulated in the optical resonator increases to a predetermined level, the switching element outputs an optical pulse by lowering a Q factor from a first level to a second level lower than the first level.