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公开(公告)号：US20240039240A1
公开(公告)日：2024-02-01
申请号：US18486968
申请日：2023-10-13
Applicant: Freedom Photonics LLC
Inventor： Gordon Barbour Morrison
CPC classification number: H01S5/1007 , H01S5/1064 , H01S5/125 , H01S5/04256 , H01S5/1014 , H01S5/101 , H01S2301/166
Abstract: Various designs of semiconductor lasers may comprise a waveguide having a front region that is configured to support a plurality of transverse laser cavity modes and a rear region that support only one transverse laser cavity mode. These front and rear regions may be disposed between front and rear reflectors and may provide optical gain. Some such designs may be useful for providing higher power single mode semiconductor lasers.
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公开(公告)号：US11837838B1
公开(公告)日：2023-12-05
申请号：US17163028
申请日：2021-01-29
Applicant: Freedom Photonics LLC
Inventor： Gordon Barbour Morrison
CPC classification number: H01S5/1007 , H01S5/04256 , H01S5/101 , H01S5/1014 , H01S5/1064 , H01S5/125 , H01S2301/166
Abstract: Various designs of semiconductor lasers may comprise a waveguide having a front region that is configured to support a plurality of transverse laser cavity modes and a rear region that support only one transverse laser cavity mode. These front and rear regions may be disposed between front and rear reflectors and may provide optical gain. Some such designs may be useful for providing higher power single mode semiconductor lasers.
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公开(公告)号：US20180278021A1
公开(公告)日：2018-09-27
申请号：US15992573
申请日：2018-05-30
Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives , STMICROELECTRONICS SA , STMICROELECTRONICS (CROLLES 2) SAS
Inventor： Thomas Ferrotti , Badhise Ben Bakir , Alain Chantre , Sebastien Cremer , Helene Duprez
IPC: H01S5/12 , H01S5/10 , H01S5/026 , H01S5/02 , H01S5/343 , H01S5/022 , G02B6/12 , G02B6/34 , G02B6/30 , H01S5/187 , H01S5/323 , H01S5/042
CPC classification number: H01S5/1237 , G02B6/30 , G02B6/34 , G02B2006/12061 , G02B2006/12121 , H01L2224/32 , H01S5/021 , H01S5/0215 , H01S5/02284 , H01S5/026 , H01S5/0421 , H01S5/1014 , H01S5/1032 , H01S5/1231 , H01S5/187 , H01S5/323 , H01S5/343 , H01S2301/166
Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
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公开(公告)号：US09929532B1
公开(公告)日：2018-03-27
申请号：US15623937
申请日：2017-06-15
Applicant: Mitsubishi Electric Corporation
Inventor： Kimio Shigihara , Satoshi Nishikawa
CPC classification number: H01S5/026 , H01S5/0014 , H01S5/1003 , H01S5/1014 , H01S5/1017 , H01S5/1025 , H01S5/168 , H01S5/22 , H01S2301/166
Abstract: A broad area semiconductor laser device includes a waveguide region and a filter region. The waveguide region includes an active region into which current is injected, and a cladding region that sandwiches the active region. The active region either protrudes or is recessed with respect to the filter region, so as to promote the divergence of higher order modes in the filter region.
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公开(公告)号：US09431793B2
公开(公告)日：2016-08-30
申请号：US14625103
申请日：2015-02-18
Applicant: Kabushiki Kaisha Toshiba
Inventor： Nobuo Suzuki , Masaki Tohyama
CPC classification number: H01S5/1231 , H01S5/021 , H01S5/026 , H01S5/0422 , H01S5/0654 , H01S5/1032 , H01S5/1237 , H01S5/124 , H01S5/2224 , H01S5/34306 , H01S2301/166
Abstract: A semiconductor laser device in an embodiment includes a compound semiconductor layer and a silicon layer. The compound semiconductor layer includes an active layer emitting laser light and has a first mesa structure. The silicon layer is bonded with the compound semiconductor layer. A diffraction grating is provided on a surface of the silicon layer which faces the compound semiconductor layer, and includes a main diffraction grating and two sub-diffraction gratings. The main diffraction grating extends in a longitudinal direction of the first mesa structure; the sub-diffraction gratings are disposed on both sides of the main diffraction grating.
Abstract translation: 实施例中的半导体激光器件包括化合物半导体层和硅层。 化合物半导体层包括发射激光的有源层并具有第一台面结构。 硅层与化合物半导体层接合。 在硅层的面向化合物半导体层的表面上设置衍射光栅，并且包括主衍射光栅和两个副衍射光栅。 主衍射光栅在第一台面结构的纵向方向上延伸; 副衍射光栅设置在主衍射光栅的两侧。
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Patent Agency Ranking
公开(公告)号：US20160248225A1
公开(公告)日：2016-08-25
申请号：US15048440
申请日：2016-02-19
Applicant: HRL Laboratories, LLC
Inventor： Keyvan SAYYAH , Oleg M. EFIMOV , Pamela R. PATTERSON , Andrey A. KISELEV
IPC: H01S5/06 , H01S5/343 , H01S5/026 , H01S5/022 , H01S5/042 , H01S5/40 , H01S5/22 , H01S5/024 , H01S5/0683 , H01S5/125 , H01S5/10 , H01S5/028
CPC classification number: H01S5/0604 , H01S3/2383 , H01S5/0092 , H01S5/0228 , H01S5/02453 , H01S5/0261 , H01S5/0264 , H01S5/028 , H01S5/0287 , H01S5/0425 , H01S5/06821 , H01S5/0683 , H01S5/1014 , H01S5/1028 , H01S5/1064 , H01S5/125 , H01S5/187 , H01S5/2013 , H01S5/22 , H01S5/34333 , H01S5/4025 , H01S5/4031 , H01S5/50 , H01S2301/166
Abstract: A chip scale ultra violet laser source includes a plurality of laser elements on a substrate each including a back cavity mirror, a tapered gain medium, an outcoupler, a nonlinear crystal coupled to the outcoupler with a front facet that has a first coating that is anti-reflectivity (AR) to a fundamental wavelength of the laser element and high reflectivity (HR) to ultra violet wavelengths, and has an exit facet that has a second coating that has HR to a fundamental wavelength of the laser element and AR to the ultra violet wavelengths, a photodetector coupled to the outcoupler, a phase modulator coupled to the photodetector and coupled to the back cavity mirror, and a master laser diode on the substrate coupled to the phase modulator of each laser element. Each laser element emits an ultra violet beamlet and is frequency and phase locked to the master laser diode.
Abstract translation: 芯片级紫外激光源包括在基板上的多个激光元件，每个激光元件包括后腔反射镜，锥形增益介质，输出耦合器，耦合到输出耦合器的非线性晶体，前面具有第一涂层，其为反面 - 反射率（AR）到激光元件的基本波长和对紫外波长的高反射率（HR），并且具有出口小面，其具有HR具有激光元件的基本波长的HR和超过激光元件的AR的第二涂层 紫外波长，耦合到输出耦合器的光电检测器，耦合到光电检测器并耦合到后腔镜的相位调制器，以及耦合到每个激光元件的相位调制器的基板上的主激光二极管。 每个激光元件发射紫外光束，并且与主激光二极管频率和相位锁定。
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公开(公告)号：US20160087404A1
公开(公告)日：2016-03-24
申请号：US14951096
申请日：2015-11-24
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Alfred LELL , Christoph EICHLER , Wolfgang SCHMID , Soenke TAUTZ , Wolfgang REILL , Dimitri DINI
CPC classification number: H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
Abstract: A laser light source, comprising a semiconductor layer sequence on a substrate and having an active region and a radiation coupling out area having first and second partial regions and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction and which is remote from the substrate.
Abstract translation: 一种激光源，包括在衬底上的半导体层序列，并且具有有源区和具有第一和第二部分区域的辐射耦合区域和滤波器结构。 有源区域产生相干的第一电磁辐射和非相干的第二电磁辐射，相干的第一电磁辐射沿着发射方向由第一部分区域发射，非相干的第二电磁辐射由第一部分区域和第二部分区域发射。 滤波器结构至少部分地衰减沿着发射方向由有源区发射的非相干的第二电磁辐射。 滤波器结构具有布置在半导体层序列的区域上的至少一个滤波器元件，该滤波器元件的延伸方向平行于发射方向并且远离衬底。
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8.发明授权Surface emitting laser, surface-emitting-laser array, and image forming apparatus 有权表面发射激光器，表面发射激光器阵列和成像装置公开(公告)号：US09281660B2
公开(公告)日：2016-03-08
申请号：US14519609
申请日：2014-10-21
Applicant: CANON KABUSHIKI KAISHA
Inventor： Mitsuhiro Ikuta
CPC classification number: H01S5/18 , B41J2/455 , B41J2/473 , H01S3/02 , H01S5/183 , H01S5/18313 , H01S5/1833 , H01S5/18361 , H01S5/18391 , H01S5/3202 , H01S5/423 , H01S2301/16 , H01S2301/166 , H01S2301/18
Abstract: The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser. The surface emitting laser includes a first stepped structure on a front surface of a front mirror. In the first stepped structure, a difference L between an optical path length in a first area and an optical path length in a second area satisfies the following expression: (¼+N)λ
Abstract translation: 本发明提供一种表面发射激光器，其提供足够的光输出并且适合作为用于电子照相设备的光源，以及包括表面发射激光器的表面发射激光器阵列和图像形成装置。 表面发射激光器包括在前反射镜的前表面上的第一阶梯结构。 在第一阶梯结构中，第一区域的光路长度与第二区域的光程长度之间的差值L满足以下表达式：（¼+ N）λ<| L | <（¾+ N）λ其中 N是整数。
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公开(公告)号：US20160056612A1
公开(公告)日：2016-02-25
申请号：US14827429
申请日：2015-08-17
Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives , STMICROELECTRONICS SA , STMICROELECTRONICS (CROLLES 2) SAS
Inventor： Thomas Ferrotti , Badhise Ben Bakir , Alain Chantre , Sebastien Cremer , Helene Duprez
CPC classification number: H01S5/1237 , G02B6/30 , G02B6/34 , G02B2006/12061 , G02B2006/12121 , H01L2224/32 , H01S5/021 , H01S5/0215 , H01S5/02284 , H01S5/026 , H01S5/0421 , H01S5/1014 , H01S5/1032 , H01S5/1231 , H01S5/187 , H01S5/323 , H01S5/343 , H01S2301/166
Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising:a III-V heterostructure gain medium (3); andan optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon.The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
Abstract translation: 本发明涉及一种布置在硅中和/或硅上的III-V异质结构激光器件，包括：III-V异质结构增益介质; 以及面向所述增益介质（3）布置并包括配备有纵向肋（17）的平板波导（15）的光学肋波导（11），所述光学波纹管（11）布置在所述硅中。 光学肋波导（11）被定向成使得至少一个布拉格光栅（19,19a，19b）布置在相对于增益介质（3）近端的平板波导（15）的该侧（21）上， 因为肋（17）被放置在相对于增益介质（3）远端的平板波导（15）的该侧（23）上。
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公开(公告)号：US09209602B2
公开(公告)日：2015-12-08
申请号：US14240545
申请日：2012-08-24
Applicant: Sam Davies , Neil David Whitbread , Andrew Ward
Inventor： Sam Davies , Neil David Whitbread , Andrew Ward
IPC: H01S3/00 , H01S5/125 , H01S5/0625 , H01S5/0687 , H01S5/10 , H01S5/026 , H01S5/40 , H01S5/50
CPC classification number: H01S5/125 , H01S5/026 , H01S5/06256 , H01S5/0687 , H01S5/1025 , H01S5/1064 , H01S5/4031 , H01S5/50 , H01S2301/163 , H01S2301/166
Abstract: A monolithically integrated, tunable semiconductor laser with an optical waveguide, comprising epitaxial layers on a substrate and having first and second reflectors bounding an optical gain section and a non-driven region, wherein at least one of the reflectors is a distributed Bragg reflector section configured to have a tunable reflection spectrum, wherein control electrodes are provided to at least the optical gain section, and the distributed Bragg reflector section, and wherein the non-driven region has a length of at least 100 μm, is without an electrical contact directly contacting onto the epitaxially grown side of the non-driven region, and the non-driven region is without a reflective Bragg grating within the epitaxial layers of the non-driven region.
Abstract translation: 一种具有光波导的单片集成的可调谐半导体激光器，包括在衬底上的外延层，并且具有界定光学增益部分和非驱动区域的第一和第二反射器，其中至少一个反射器是配置的分布式布拉格反射器部分 具有可调谐反射光谱，其中控制电极至少设置在光学增益部分和分布式布拉格反射器部分，并且其中非驱动区域具有至少100μm的长度，没有电接触直接接触 在非驱动区域的外延生长侧上，非驱动区域在非驱动区域的外延层内没有反射布拉格光栅。
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