公开(公告)号：US20170133551A1

公开(公告)日：2017-05-11

申请号：US15409546

申请日：2017-01-19

Applicant: NICHIA CORPORATION

Inventor： Hitoshi MINAKUCHI ,  Kenichi MATSUI

IPC: H01L33/00 ,  H01L33/20

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/20

Abstract: A semiconductor light emitting element includes a substrate and a semiconductor structure. The substrate has a first main surface, a second main surface and side surfaces. The side surfaces form a first altered area in which voids are positioned in a first imaginary line and a second imaginary line different from the first imaginary line in the thickness direction of the substrate. The semiconductor structure is provided on or above the first main surface of the substrate.

公开(公告)号：US20210384375A1

公开(公告)日：2021-12-09

申请号：US17342233

申请日：2021-06-08

Applicant: NICHIA CORPORATION

Inventor： Keiji SAKAMOTO ,  Takashi ABE ,  Hitoshi MINAKUCHI ,  Tsuyoshi ITO ,  Katsuyuki KAWABATA ,  Kenji HASHIZUME

IPC: H01L33/00 ,  H01L33/50

Abstract: A method of manufacturing a light-emitting device includes: providing a substrate having a first surface and a second surface opposite to the first surface; forming, on or above the first surface of the substrate, a semiconductor structure comprising a light-emitting layer; forming a crack inside the substrate, the crack reaching the first surface of the substrate; disposing a wavelength conversion layer on the second surface of the substrate; forming a first recess in the wavelength conversion layer by removing a first portion of the wavelength conversion layer, the first portion overlapping with the crack when viewed in a direction from the wavelength conversion layer toward the semiconductor structure, and leaving a second portion of the wavelength conversion layer between the first recess and the semiconductor structure; and cleaving the second portion along the crack.

公开(公告)号：US20150372188A1

公开(公告)日：2015-12-24

申请号：US14742716

申请日：2015-06-18

Applicant: NICHIA CORPORATION

Inventor： Hitoshi MINAKUCHI ,  Kenichi MATSUI

IPC: H01L33/00

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/20

Abstract: A method for producing a semiconductor light emitting element includes a wafer preparation step, a first irradiation step, a second irradiation step, and a wafer division step. The wafer includes a semiconductor structure on a first main surface of a substrate. In the first irradiation step, a first light-condensing position in the thickness direction of the substrate is irradiated with a first laser beam from a second main surface of the substrate to form an altered area. The second main surface is opposite to the first main surface. In the second irradiation step, a second light-condensing position is irradiated with a second laser beam. The second light-condensing position is located at a position in the altered area different from the first light-condensing position. In the wafer division step, the wafer is divided into individual light emitting elements.

Abstract translation: 一种制造半导体发光元件的方法包括晶片制备步骤，第一照射步骤，第二照射步骤和晶片分割步骤。 晶片包括在基板的第一主表面上的半导体结构。 在第一照射步骤中，从基板的第二主表面照射基板厚度方向上的第一聚光位置，以形成改变的区域。 第二主表面与第一主表面相对。 在第二照射步骤中，用第二激光束照射第二聚光位置。 第二聚光位置位于与第一聚光位置不同的改变区域中的位置。 在晶片分割工序中，将晶片分割为各个发光元件。