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公开(公告)号:US20210384375A1
公开(公告)日:2021-12-09
申请号:US17342233
申请日:2021-06-08
Applicant: NICHIA CORPORATION
Inventor: Keiji SAKAMOTO , Takashi ABE , Hitoshi MINAKUCHI , Tsuyoshi ITO , Katsuyuki KAWABATA , Kenji HASHIZUME
Abstract: A method of manufacturing a light-emitting device includes: providing a substrate having a first surface and a second surface opposite to the first surface; forming, on or above the first surface of the substrate, a semiconductor structure comprising a light-emitting layer; forming a crack inside the substrate, the crack reaching the first surface of the substrate; disposing a wavelength conversion layer on the second surface of the substrate; forming a first recess in the wavelength conversion layer by removing a first portion of the wavelength conversion layer, the first portion overlapping with the crack when viewed in a direction from the wavelength conversion layer toward the semiconductor structure, and leaving a second portion of the wavelength conversion layer between the first recess and the semiconductor structure; and cleaving the second portion along the crack.
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公开(公告)号:US20180240933A1
公开(公告)日:2018-08-23
申请号:US15899095
申请日:2018-02-19
Applicant: NICHIA CORPORATION
Inventor: Yoshitaka SUMITOMO , Katsuyuki KAWABATA , Naoto INOUE
CPC classification number: H01L33/005 , H01L33/0095 , H01L33/16 , H01L33/46 , H01L2933/0025
Abstract: A method of manufacturing a light emitting element includes: providing a wafer that comprises: a substrate having a first main surface and a second main surface, a dielectric multilayer film on the first main surface, and a semiconductor structure on the second main surface; focusing laser light onto an inner portion of the substrate from a first main surface side of the substrate, to simultaneously form a modified region in the substrate and remove a portion of the dielectric multilayer film; and cleaving the wafer at a portion where the modified region is formed to obtain a plurality of light emitting elements.
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