公开(公告)号：US20180316157A1

公开(公告)日：2018-11-01

申请号：US16031683

申请日：2018-07-10

Applicant: NICHIA CORPORATION

Inventor： Akinori YONEDA ,  Shinya SONOBE ,  Hiroaki YUTO

IPC: H01S5/022 ,  C25D5/02 ,  C25D7/12 ,  C23C14/18 ,  C25D3/38 ,  C23C14/34

Abstract: The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method.

公开(公告)号：US20160118767A1

公开(公告)日：2016-04-28

申请号：US14920134

申请日：2015-10-22

Applicant: NICHIA CORPORATION

Inventor： Akinori YONEDA ,  Shinya SONOBE ,  Hiroaki YUTO

IPC: H01S5/022 ,  H05K1/09 ,  H05K3/18 ,  H05K3/06 ,  C23C14/18 ,  C25D3/38 ,  C25D7/12 ,  C25D5/02 ,  C23C14/34 ,  H05K1/03 ,  H05K3/16

CPC classification number: H01S5/02272 ,  C23C14/185 ,  C23C14/34 ,  C25D3/38 ,  C25D5/022 ,  C25D7/123 ,  H01S5/02212

Abstract: The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method.

Abstract translation: 该方法包括以下步骤：制备包括上表面10a和下表面10b的单晶SiC，并且具有从上表面10a穿透到下表面10b的微管11; 在单晶SiC的上表面10a上形成由金属材料制成的第一晶种层21; 并且在第一晶种层21上形成第一镀层31，以便使用电镀方法封闭微管11的上端。