Abstract:
A light emitting device has a plurality of light emitting elements that are arranged with gaps between the devices on a mounting board in a first direction, a wavelength-conversion member that covers the plurality of light emitting elements, a light reflective resin. Each light emitting element has an n-type semiconductor layer, an active layer provided in a part of the n-type semiconductor layer, and a p-type semiconductor layer provided on the active layer. In a second direction which is perpendicular to the first direction, an n-side electrodes are provided at least in regions at both ends of the n-type semiconductor layer, and a p-side electrode is provided on the surface of the p-type semiconductor layer, and wherein in the second direction, the wavelength-conversion member is positioned to approximately align both sides with both active layer side faces, or to dispose its sides outward of the active layer side faces.
Abstract:
A wavelength-converting member includes a wavelength-converting layer, a heat-dissipating component, and a securing member. The wavelength-converting layer has an upper surface, a lower surface, and one or more lateral surfaces with each of the one or more lateral surfaces of the wavelength-converting layer defining an inclined surface inclined at an acute angle with respect to the lower surface of the wavelength-converting layer. The wavelength-converting layer includes a thermally conductive part, and a fluorescent material containing part in contact with the thermally conductive part. The wavelength-converting layer is mounted on the heat-dissipating component. The securing member is secured to the heat-dissipating component. The securing member presses the inclined surface of each of the one or more lateral surfaces such that the wavelength-converting layer is secured to the heat-dissipating component.
Abstract:
A method of manufacturing one or more light emitting devices includes: forming one or more emitting elements, each including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a first electrode, and a second electrode, on a growth substrate; forming a first metal layer electrically connected to each first electrode, and a second metal layer electrically connected to each second electrode; forming a first resin layer covering the one or more light emitting elements so as to expose an upper surface of each first metal layer and an upper surface of each second metal layer; connecting a first wire to the upper surface of each first metal layer, and connecting a second wire to the upper surface of each second metal layer; and forming a second resin layer on the first resin layer so as to expose an end portion of each first wire and second wire.
Abstract:
A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light emitting element, the insulating member filling around the bumps and flattening the upper surface is formed with a margin of a region with a width which is equal to or larger than the width of the streets on the dividing lines, so that at the time of dividing the wafer along the dividing lines, the insulating member is not processed, which allows designing of the streets with a small width.
Abstract:
A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.
Abstract:
A side-view type light emitting device has a bottom surface thereof as a light emission surface and a first lateral surface thereof as a mounting surface for mounting on a mounting substrate, and includes a semiconductor layered structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first connecting electrode exposed from the first lateral surface and electrically connected to the first semiconductor layer; a first electrode disposed between the first semiconductor layer and the first connecting electrode; a second connecting electrode exposed from the first lateral surface; a metal wire electrically connecting an upper surface of the second semiconductor layer to the second connecting electrode; and a resin layer. In a direction perpendicular to the light emission surface, the active layer does not overlap with the first connecting electrode, and the active layer does not overlap with the second connecting electrode.
Abstract:
A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.
Abstract:
A method of manufacturing a light emitting device includes providing a wafer having a substrate and a plurality of semiconductor stacked-layer bodies stacked on the substrate, an upper surface of the substrate being exposed at an outer peripheral region of each of the plurality of semiconductor stack bodies in a plan view, forming a separation layer integrally covering the upper surface of the substrate and an upper surface of the semiconductor stacked-layer body, the separation layer including a separation boundary, forming a support member on the separation layer, removing the substrate, forming a wavelength conversion layer on a side of the semiconductor stack body and the separation layer where the substrate is removed, the wavelength conversion layer made of a resin containing a wavelength conversion member, and removing the wavelength conversion layer located in the outer peripheral region by separating the separation layer at the separation boundary.
Abstract:
A light emitting device includes a semiconductor light emitting element, a resin layer, and a metal wire. The semiconductor light emitting element includes a semiconductor stack and an electrode. The semiconductor stack has one surface. The metal wire has a first surface, a second surface opposite to the first surface, and an end surface between the first surface and the second surface. The metal wire is provided in the resin layer and electrically connected to an upper surface of the electrode via the first surface. The end surface of the metal wire is exposed from the resin layer. A lower end of the end surface closest to the first surface of the metal wire that is exposed from the resin layer is provided at an opposite side of the one surface of the semiconductor stack with respect to the upper surface of the electrode.
Abstract:
A side-view type light emitting device having a bottom surface thereof as a light emission surface and one side surface thereof as amounting surface for mounting on amounting substrate includes a stacked semiconductor layer having a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked in that order from a side of the bottom surface; a first connecting electrode exposed from the one side surface and electrically connected to the first semiconductor layer; a metal wire having one end thereof electrically connected to an upper surface of the second semiconductor layer; a second connecting electrode exposed from the one side surface and electrically connected to the other end of the metal wire; and a resin layer which covers at least a part of each of the first semiconductor layer, the second semiconductor layer, the first connecting electrode, the second connecting electrode and the metal wire and which is configured to form an upper surface and side surfaces of the light emitting device.