公开(公告)号：US20140225143A1

公开(公告)日：2014-08-14

申请号：US14176375

申请日：2014-02-10

Applicant: NICHIA CORPORATION ,  CITIZEN HOLDINGS CO., LTD. ,  CITIZEN ELECTRONICS CO., LTD.

Inventor： Takeshi KUSUSE ,  Toshiaki OGAWA ,  Shunsuke MINATO ,  Nodoka OYAMADA

IPC: H01L33/62 ,  H01L33/50

CPC classification number: H01L33/62 ,  H01L24/96 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/505 ,  H01L33/54 ,  H01L2224/04105 ,  H01L2924/12036 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00

Abstract: A semiconductor device has a light emitting element, and a resin layer; the light emitting element includes a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated in sequence, a second electrode connected to the second semiconductor layer on an upper surface of the second semiconductor layer that forms an upper surface of the semiconductor laminated body, and a first electrode connected to the first semiconductor layer on an upper surface of the first semiconductor layer in which a portion of the second semiconductor layer on one surface of the semiconductor laminated body is removed and a portion of the first semiconductor layer is exposed; and the resin layer is configured to cover at least a side surface of the light emitting element, and an upper surface of the resin layer is lower than the upper surface of the semiconductor laminated body.

Abstract translation: 半导体器件具有发光元件和树脂层; 发光元件包括依次层叠有第一半导体层和第二半导体层的半导体层叠体，在形成第二半导体层的上表面的第二半导体层的上表面上连接到第二半导体层的第二电极 半导体层叠体以及在第一半导体层的上表面与第一半导体层连接的第一电极，其中半导体层叠体的一个表面上的第二半导体层的一部分被去除，并且第一半导体层的一部分 被暴露 并且所述树脂层被构造成覆盖所述发光元件的至少一个侧表面，并且所述树脂层的上表面低于所述半导体层叠体的上表面。

公开(公告)号：US20140124821A1

公开(公告)日：2014-05-08

申请号：US14072359

申请日：2013-11-05

Applicant: NICHIA CORPORATION

Inventor： Masakatsu TOMONARI ,  Toshiaki OGAWA ,  Shunsuke MINATO

IPC: H01L33/38

CPC classification number: H01L33/38 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28247 ,  H01L21/76841 ,  H01L23/28 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L24/26 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/022 ,  H01L2224/8092 ,  H01L2924/01322 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A semiconductor light-emitting element capable of increasing a strength of adhesion between an electrode and a protection film.The semiconductor light-emitting element includes a semiconductor structure having an n-type semiconductor layer and a p-type semiconductor layer. A transparent conductive film is disposed on the p-type semiconductor layer. An insulation film is disposed on the transparent conductive film. A p-side electrode layer is disposed on the insulation film. A protection film is disposed over the insulation film, and the protection film covers part of the p-side electrode layer.

Abstract translation: 能够提高电极和保护膜之间的粘合强度的半导体发光元件。 半导体发光元件包括具有n型半导体层和p型半导体层的半导体结构。 透明导电膜设置在p型半导体层上。 绝缘膜设置在透明导电膜上。 p侧电极层设置在绝缘膜上。 保护膜设置在绝缘膜上，保护膜覆盖p侧电极层的一部分。