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    SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING SAME
    1.
    发明公开
    SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING SAME 审中-公开

    公开(公告)号：US20230352909A1

    公开(公告)日：2023-11-02

    申请号：US18307564

    申请日：2023-04-26

    Applicant: NICHIA CORPORATION ,  KYOTO UNIVERSITY

    Inventor： Atsuo MICHIUE ,  Kunimichi OMAE ,  Shunsuke MINATO ,  Susumu NODA

    IPC: H01S5/11 ,  H01S5/343

    CPC classification number: H01S5/11 ,  H01S5/34333

    Abstract: A semiconductor laser includes: a first semiconductor layer part including a semiconductor layer of a first conductivity type; an active layer disposed on the first semiconductor layer part; a second semiconductor layer part disposed on the active layer and including a semiconductor layer of a second conductivity type; a third semiconductor layer p100415-0433art disposed on the second semiconductor layer part and including a semiconductor layer containing a first concentration of an impurity of the first conductivity type; and a fourth semiconductor layer part disposed on the third semiconductor layer part and including a semiconductor layer containing a second concentration of the impurity of the first conductivity type, the second concentration being lower than the first concentration. The third semiconductor layer part is directly bonded to the fourth semiconductor layer part. At least one of the third semiconductor layer part or the fourth semiconductor layer part includes a photonic crystal.

    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
    3.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE 有权
    发光装置及制造发光装置的方法

    公开(公告)号：US20150124457A1

    公开(公告)日：2015-05-07

    申请号：US14534614

    申请日：2014-11-06

    Applicant: NICHIA CORPORATION

    Inventor： Daisuke SANGA ,  Masatsugu ICHIKAWA ,  Shunsuke MINATO ,  Toru TAKASONE ,  Masahiko SANO

    IPC: F21V13/04 ,  B32B38/10 ,  B32B38/00 ,  F21V13/14 ,  B32B37/00

    CPC classification number: B32B38/0004 ,  B32B37/02 ,  B32B2305/55 ,  B32B2307/412 ,  B32B2551/00 ,  H01L33/0079 ,  H01L33/58 ,  H01L33/60

    Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

    Abstract translation: 发光器件可以进一步提高光提取效率。 制造这种发光器件的方法也可证明是有利的。 发光器件包括发光元件，设置在发光元件的光提取表面侧的透光元件和设置在透光元件的元件接合表面上的反射层，其中发光元件 设置并邻近发光元件。 透光构件在平面图中具有比发光元件的光提取表面更大的平面尺寸。

    LIGHT EMITTING DEVICE
    4.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140225143A1

    公开(公告)日：2014-08-14

    申请号：US14176375

    申请日：2014-02-10

    Applicant: NICHIA CORPORATION ,  CITIZEN HOLDINGS CO., LTD. ,  CITIZEN ELECTRONICS CO., LTD.

    Inventor： Takeshi KUSUSE ,  Toshiaki OGAWA ,  Shunsuke MINATO ,  Nodoka OYAMADA

    IPC: H01L33/62 ,  H01L33/50

    CPC classification number: H01L33/62 ,  H01L24/96 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/505 ,  H01L33/54 ,  H01L2224/04105 ,  H01L2924/12036 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00

    Abstract: A semiconductor device has a light emitting element, and a resin layer; the light emitting element includes a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated in sequence, a second electrode connected to the second semiconductor layer on an upper surface of the second semiconductor layer that forms an upper surface of the semiconductor laminated body, and a first electrode connected to the first semiconductor layer on an upper surface of the first semiconductor layer in which a portion of the second semiconductor layer on one surface of the semiconductor laminated body is removed and a portion of the first semiconductor layer is exposed; and the resin layer is configured to cover at least a side surface of the light emitting element, and an upper surface of the resin layer is lower than the upper surface of the semiconductor laminated body.

    Abstract translation: 半导体器件具有发光元件和树脂层; 发光元件包括依次层叠有第一半导体层和第二半导体层的半导体层叠体，在形成第二半导体层的上表面的第二半导体层的上表面上连接到第二半导体层的第二电极 半导体层叠体以及在第一半导体层的上表面与第一半导体层连接的第一电极，其中半导体层叠体的一个表面上的第二半导体层的一部分被去除，并且第一半导体层的一部分 被暴露 并且所述树脂层被构造成覆盖所述发光元件的至少一个侧表面，并且所述树脂层的上表面低于所述半导体层叠体的上表面。

    LIGHT EMITTING APPARATUS AND METHOD FOR PRODUCING THE SAME
    6.
    发明申请
    LIGHT EMITTING APPARATUS AND METHOD FOR PRODUCING THE SAME 有权

    公开(公告)号：US20220140212A1

    公开(公告)日：2022-05-05

    申请号：US17574474

    申请日：2022-01-12

    Applicant: NICHIA CORPORATION

    Inventor： Shunsuke MINATO ,  Masahiko SANO

    IPC: H01L33/60 ,  H01L33/50 ,  H01L33/62 ,  H01L33/58 ,  H01L33/56 ,  H01L25/075 ,  H01L33/54 ,  H01L33/44

    Abstract: A light emitting apparatus includes: a mount substrate; at least one light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the at least one light emitting device via at least one adhesive material layer, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the light emitting devices, and wherein a lateral surface of the light transparent member is located laterally inward of a lateral surface of the at least one light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开

    公开(公告)号：US20180166610A1

    公开(公告)日：2018-06-14

    申请号：US15892298

    申请日：2018-02-08

    Applicant: NICHIA CORPORATION

    Inventor： Shunsuke MINATO

    IPC: H01L33/38 ,  H01L33/00 ,  H01L33/32 ,  H01L33/44

    Abstract: A semiconductor light emitting element includes a first semiconductor layer, an active layer, a second semiconductor layer, a first conducting layer, a second conducting layer, and an insulating layer. The insulating layer is disposed at least on or above the upper surface of the second conducting layer. Holes are opened at given intervals through the second semiconductor layer to expose the first semiconductor layer at bottom surfaces of the holes. In each of the holes, the insulating layer covers from a side-wall surface of each of the holes to a first region provided on or above the upper surface of the second conducting layer around a top of each of the holes. The first conducting layer covers from the bottom surface of each of the holes to a second region provided over the second conducting layer and the insulating layer around the top of each of the holes.

    SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权

    公开(公告)号：US20220278250A1

    公开(公告)日：2022-09-01

    申请号：US17680158

    申请日：2022-02-24

    Applicant: NICHIA CORPORATION

    Inventor： Shunsuke MINATO

    IPC: H01L33/02 ,  H01L33/00

    Abstract: A semiconductor light emitting element includes: a first light emitting part comprising: a first n-side nitride semiconductor layer; a first active layer located on the first n-side nitride semiconductor layer; and a first p-side nitride semiconductor layer located on the first active layer; and a second n-side nitride semiconductor layer. A bonding face of the first light emitting part and a bonding face of the second n-side nitride semiconductor layer are directly bonded. At least one void is present between the bonding face of the first light emitting part and the bonding face of the second n-side nitride semiconductor layer.

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