公开(公告)号：US11965059B2

公开(公告)日：2024-04-23

申请号：US17601674

申请日：2020-04-09

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Shigetaka Otagiri ,  Tokio Nishita ,  Takafumi Endo ,  Yuki Endo ,  Takahiro Kishioka

IPC: C08G59/14 ,  C08G59/16 ,  C08G59/26 ,  C08G59/62 ,  C08G59/68 ,  C09D163/00 ,  C09D163/10 ,  G03F7/11 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/67

CPC classification number: C08G59/1483 ,  C08G59/1455 ,  C08G59/26 ,  C08G59/621 ,  C08G59/68 ,  H01L21/027 ,  H01L21/67075

Abstract: A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents —OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).