公开(公告)号：US11768436B2

公开(公告)日：2023-09-26

申请号：US16955178

申请日：2018-12-20

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi Endo ,  Yasunobu Someya ,  Takahiro Kishioka

IPC: G03F7/40 ,  C08L33/06 ,  C08L33/14 ,  C23C16/02 ,  C23C16/455 ,  G03F7/11 ,  H01L21/308 ,  H01L21/033 ,  C09D133/06 ,  G03F7/09

CPC classification number: G03F7/40 ,  C08L33/066 ,  C08L33/068 ,  C08L33/14 ,  C09D133/066 ,  C23C16/0227 ,  C23C16/45534 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0332 ,  H01L21/308 ,  C08L2201/56

Abstract: A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one pair including two adjacent hydroxyl groups in a molecule thereof, and forms a protective film which can quickly be removed by dry etching and exhibits excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.

公开(公告)号：US11385546B2

公开(公告)日：2022-07-12

申请号：US16605440

申请日：2018-04-11

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi Endo ,  Hikaru Tokunaga ,  Keisuke Hashimoto ,  Rikimaru Sakamoto

IPC: G03F7/11 ,  G03F7/16 ,  H01L21/3105 ,  G03F7/26

Abstract: There are provided a plasma-curable multi-level substrate coating film-forming composition for forming a coating film having planarity on a substrate, wherein the composition can fill a pattern sufficiently. A plasma-curable multi-level substrate coating film-forming composition comprising a compound (E) and a solvent (F), wherein the compound (E) has at least one partial structure selected from partial structures (I) of the following Formulae (1-1) to (1-7): wherein R1, R1a, R3, R5a, and R6a are each independently a C1-10 alkylene group, a C6-40 arylene group (the alkylene group and the arylene group are optionally substituted with one or more amide or amino groups), an oxygen atom, a carbonyl group, a sulfur atom, —C(O)—NRa—, —NRb—, or a divalent group composed of any combination of these; R5 is each independently a nitrogen atom, or a trivalent group composed of a combination of a nitrogen atom and at least one group selected from the group consisting of a C1-10 alkylene group, a C6-40 arylene group (the alkylene group and the arylene group are optionally substituted with one or more amide or amino groups), an oxygen atom, a carbonyl group, a sulfur atom, —C(O)—NRa—, and —NRb—; R2, R2a, R4, and R6 are each independently a hydrogen atom, a C1-10 alkyl group, or a monovalent group composed of a combination of a hydrogen atom and at least one group selected from the group consisting of a C1-10 alkylene group, an oxygen atom, a carbonyl group, —C(O)—NRa—, and —NRb—; Ra is a hydrogen atom or a C1-10 alkyl group; Rb is a hydrogen atom, a C1-10 alkyl group, or a C1-10 alkylcarbonyl group; n is a number of repeating units of 1 to 10; and a dotted line is a chemical bond to the adjacent atom.

公开(公告)号：US11287742B2

公开(公告)日：2022-03-29

申请号：US16625957

申请日：2018-06-22

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Hirokazu Nishimaki ,  Takafumi Endo

IPC: G03F7/16 ,  G03F7/11 ,  C08G61/12 ,  C09D165/00 ,  H01L21/027

Abstract: A method for reducing the level difference (iso-dense bias) (reverse bump) of a resist underlayer film formed on a semiconductor substrate having a stepped portion and a non-stepped portion by 5 nm or more, which comprises a step of applying the composition to an upper surface of the semiconductor substrate having a stepped portion and a non-stepped portion. A method for reducing the level difference (iso-dense bias) of a resist underlayer film, comprising the steps of adding a fluorine-containing surfactant to a resist underlayer film-forming composition containing a polymer and a solvent and applying the composition containing the fluorine-containing surfactant to an upper surface of a semiconductor substrate having a stepped portion and a non-stepped portion. The level difference of a resist underlayer film formed on a semiconductor substrate between a stepped portion and a non-stepped portion (i.e., reverse bump) is reduced by 5 nm or more.

公开(公告)号：US12222651B2

公开(公告)日：2025-02-11

申请号：US16964869

申请日：2019-02-01

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi Endo ,  Yuichi Goto ,  Yasunobu Someya ,  Ryuta Mizuochi ,  Satoshi Kamibayashi

IPC: G03F7/11 ,  C09D179/04 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30

Abstract: A resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and/or a reaction product; and a solvent. The bifunctional or higher compound is a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is a compound containing three or more epoxy groups.

公开(公告)号：US12147158B2

公开(公告)日：2024-11-19

申请号：US18128503

申请日：2023-03-30

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Hikaru Tokunaga ,  Takafumi Endo ,  Keisuke Hashimoto ,  Rikimaru Sakamoto

IPC: G03F7/11 ,  C08G59/14 ,  C08G59/68 ,  C08L63/00 ,  G03F7/004 ,  G03F7/008 ,  G03F7/027 ,  G03F7/038 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027

Abstract: A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure, a hydrocarbon structure, and a solvent. The compound may have the photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure and the hydrocarbon structure in one molecule, or may be a combination of compounds which contain the structures in separate molecules.

公开(公告)号：US12077633B2

公开(公告)日：2024-09-03

申请号：US17279299

申请日：2019-10-31

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi Endo ,  Tokio Nishita ,  Ryuta Mizuochi

IPC: C08G59/68 ,  C08G59/24 ,  G03F7/11 ,  G03F7/16 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311

CPC classification number: C08G59/245 ,  C08G59/68 ,  G03F7/11 ,  G03F7/168 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31144

Abstract: A protective film forming composition forms a flat film having good mask function against a wet etching liquid during a semiconductor substrate processing, high dry etching rate and good coverage of a substrate with level difference, while having small film thickness difference after embedding. A protective film is produced using this composition. A substrate has a resist pattern. A method produces a semiconductor device. A composition forms a protective film against a wet etching liquid for semiconductors, containing a solvent and a ring-opened polymer (C) obtained by reaction between a diepoxy compound (A) and a bi- or higher functional proton-generating compound (B). The ring-opened polymer (C) is preferably represented by a unit structure of formula (A-1). (In formula (A-1), Q represents a divalent organic group generated by the diepoxy compound (A) ring-opening polymerization; and T represents a divalent organic group derived from the bi- or higher functional proton-generating compound (B)).

公开(公告)号：US11674051B2

公开(公告)日：2023-06-13

申请号：US16647146

申请日：2018-09-12

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Hikaru Tokunaga ,  Takafumi Endo ,  Hiroto Ogata ,  Keisuke Hashimoto ,  Makoto Nakajima

IPC: C09D163/00 ,  G03F7/11 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027

CPC classification number: C09D163/00 ,  G03F7/11 ,  G03F7/2002 ,  G03F7/26 ,  H01L21/0274

Abstract: A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2):




and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8):





where the composition is cured by photoirradiation or by heating at 30° C.-300° C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.

公开(公告)号：US12044968B2

公开(公告)日：2024-07-23

申请号：US17311965

申请日：2020-01-20

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Tokio Nishita ,  Takafumi Endo ,  Yuki Endo ,  Takahiro Kishioka

IPC: G03F7/11 ,  C08F212/14 ,  C08F220/28 ,  C09D125/18 ,  C09D133/14 ,  H01L21/027

CPC classification number: G03F7/11 ,  C08F212/22 ,  C08F220/282 ,  C09D125/18 ,  C09D133/14 ,  H01L21/0273

Abstract: A composition for forming a protective film having excellent resistance to a wet etching solution for semiconductors during a lithographic process in the manufacture of semiconductors; a method of forming a resist pattern using said protective film; and a method for manufacturing a semiconductor device. This composition for forming a protective film against a wet etching solution for semiconductors includes: a compound or polymer which contains at least one among an acetal structure and an amide structure; and a solvent. The polymer is preferably a copolymer of: a compound (a) containing at least one acetal structure in a molecule; and a compound (b) containing at least one amide structure in a molecule.

公开(公告)号：US11977331B2

公开(公告)日：2024-05-07

申请号：US17619433

申请日：2020-06-17

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi Endo ,  Yuki Endo

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/42 ,  H01L21/027 ,  H01L21/308

CPC classification number: G03F7/11 ,  G03F7/0045 ,  G03F7/422 ,  H01L21/0274 ,  H01L21/3081

Abstract: A resist underlayer film that exhibits removability and preferably solubility only in wet etching reagent solutions, while exhibiting good resistance to resist developers that are resist solvents or aqueous alkali solutions. The composition for forming a resist underlayer film includes a dicyanostyryl group-bearing polymer (P) or dicyanostyryl group-bearing compound (C) and includes solvent, and does not contain a protonic acid curing catalyst and does not contain an alkylated aminoplast crosslinking agent derived from melamine, urea, benzoguanamine, or glycoluril.

公开(公告)号：US11965059B2

公开(公告)日：2024-04-23

申请号：US17601674

申请日：2020-04-09

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Shigetaka Otagiri ,  Tokio Nishita ,  Takafumi Endo ,  Yuki Endo ,  Takahiro Kishioka

IPC: C08G59/14 ,  C08G59/16 ,  C08G59/26 ,  C08G59/62 ,  C08G59/68 ,  C09D163/00 ,  C09D163/10 ,  G03F7/11 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/67

CPC classification number: C08G59/1483 ,  C08G59/1455 ,  C08G59/26 ,  C08G59/621 ,  C08G59/68 ,  H01L21/027 ,  H01L21/67075

Abstract: A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents —OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).