公开(公告)号：US09994684B2

公开(公告)日：2018-06-12

申请号：US14691214

申请日：2015-04-20

申请人： NISSAN CHEMICAL INDUSTRIES, LTD.

发明人： Hitoshi Furusho ,  Yuki Nohara ,  Hisayuki Watanabe ,  Yuichi Goto

IPC分类号： C08J3/28 ,  H01L21/02 ,  H01L21/225 ,  H01L31/0288 ,  H01L31/18 ,  H01L31/20 ,  B01J19/08

CPC分类号： C08J3/28 ,  B01J19/081 ,  B01J19/087 ,  C08J2383/16 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02628 ,  H01L21/2254 ,  H01L31/0288 ,  H01L31/182 ,  H01L31/20 ,  H05H2245/123 ,  Y02E10/546 ,  Y02P70/521

摘要： Described is a doping technique that forms a stable amorphous silicon film and a stable polycrystalline silicon film at a low temperature and simultaneously that imparts conductivity in an atmospheric pressure environment. A method for producing a compound containing a bond between different elements belonging to Group 4 to Group 15 of the periodic table, the method including: applying, at a low frequency and atmospheric pressure, high voltage to an inside of an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or an insulator tube or between flat plate electrodes while passing an introduction gas, so as to convert molecules present in the electric discharge tube or between the flat plate electrodes into a plasma; and applying the plasma to substances to be irradiated, the substances to be irradiated being two or more elementary substances or compounds.