Polishing composition and polishing method

    公开(公告)号:US11791164B2

    公开(公告)日:2023-10-17

    申请号:US15129838

    申请日:2015-03-30

    CPC classification number: H01L21/3212 C09G1/02 H01L21/02024 H01L21/31053

    Abstract: The present invention relates to a polishing composition including water and silica, wherein the silica has a BET specific surface area of 30 m2/g or more and an NMR specific surface area of 10 m2/g or more, and a polishing method using the polishing composition. The polishing composition of the present invention adopts silica having the BET specific surface area falling within the above-described range, and additionally having the NMR specific surface area falling within a specific range, and consequently attains a high polishing rate, and can maintain the polishing rate even when used for a long time.

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