METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
    3.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT 审中-公开
    制造半导体元件的方法

    公开(公告)号:US20140004683A1

    公开(公告)日:2014-01-02

    申请号:US13924420

    申请日:2013-06-21

    Abstract: A method of manufacturing a semiconductor element is provided. The method includes the steps of: bonding a substrate for transferring and a functional layer that is formed on a substrate for forming a functional layer with a temporary fixing layer interposed therebetween; removing the substrate for forming a functional layer to expose the functional layer; bonding a final substrate to the exposed functional layer; and separating the temporary fixing layer and the substrate for transferring from the functional layer, wherein the temporary fixing layer has (A) a specific shear adhering strength or has (B) a specific weight loss rate.

    Abstract translation: 提供一种制造半导体元件的方法。 该方法包括以下步骤:将用于转印的基板和形成在用于形成功能层的基板上形成的功能层与其间插入临时固定层的方法相结合; 去除用于形成功能层的基板以暴露功能层; 将最终的基底粘合到暴露的功能层; 并且从功能层分离临时固定层和用于转移的基板,其中临时固定层具有(A)特定的剪切粘合强度或具有(B)比重损失率。

    THERMALLY-DETACHABLE SHEET
    4.
    发明申请
    THERMALLY-DETACHABLE SHEET 审中-公开
    热剥离片

    公开(公告)号:US20140249269A1

    公开(公告)日:2014-09-04

    申请号:US14348947

    申请日:2012-09-21

    Abstract: In order to provide a thermally-detachable sheet that detaches at higher temperatures, this thermally-detachable sheet has a shear bond strength with respect to a silicon wafer of 0.25 kg/5×5 mm or larger, at a temperature of 200° C., after said temperature has been maintained for one minute, and a shear bond strength with respect to a silicon wafer of 0.25 kg/less than 5×5 mm at any temperature in a range of over 200° C. to not more than 500° C., after said temperature has been maintained for three minutes.

    Abstract translation: 为了提供在较高温度下分离的可热拆卸的片材,该热分解片材在200℃的温度下具有相对于硅晶片的剪切粘合强度为0.25kg / 5×5mm或更大。 在超过200℃至不超过500℃的任何温度下,在所述温度保持1分钟之后,相对于硅晶片的剪切粘合强度为0.25kg /小于5×5mm 在所述温度保持3分钟之后。

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