Abstract:
A thermosetting resin sheet for sealing an electronic component, that is excellent in adhesiveness, onto the electric component; a resin-sealed type semiconductor device high in reliability; and a method for producing the device are provided. The present invention relates to a thermosetting resin sheet for sealing an electronic component, comprising one or more resin components, one of the components being allowable to be a thermoplastic resin, and having a content by percentage of the thermoplastic resin of 30% or less by weight of all of the entire resin components.
Abstract:
A thermosetting resin sheet for sealing an electronic component, that is excellent in adhesiveness, onto the electric component; a resin-sealed type semiconductor device high in reliability; and a method for producing the device are provided. The present invention relates to a thermosetting resin sheet for sealing an electronic component, comprising one or more resin components, one of the components being allowable to be a thermoplastic resin, and having a content by percentage of the thermoplastic resin of 30% or less by weight of all of the entire resin components.
Abstract:
A method of manufacturing a semiconductor element is provided. The method includes the steps of: bonding a substrate for transferring and a functional layer that is formed on a substrate for forming a functional layer with a temporary fixing layer interposed therebetween; removing the substrate for forming a functional layer to expose the functional layer; bonding a final substrate to the exposed functional layer; and separating the temporary fixing layer and the substrate for transferring from the functional layer, wherein the temporary fixing layer has (A) a specific shear adhering strength or has (B) a specific weight loss rate.
Abstract:
In order to provide a thermally-detachable sheet that detaches at higher temperatures, this thermally-detachable sheet has a shear bond strength with respect to a silicon wafer of 0.25 kg/5×5 mm or larger, at a temperature of 200° C., after said temperature has been maintained for one minute, and a shear bond strength with respect to a silicon wafer of 0.25 kg/less than 5×5 mm at any temperature in a range of over 200° C. to not more than 500° C., after said temperature has been maintained for three minutes.
Abstract:
A method of manufacturing an LED according to an embodiment of the present invention includes: back-grinding a substrate of an LED wafer including the substrate and a light emitting element formed on one surface of the substrate; forming, after the back-grinding, a reflective layer on an outer side of the substrate; and attaching, on an outer side of the light emitting element of the LED wafer, a heat-resistant pressure-sensitive adhesive sheet.