公开(公告)号：US20140004637A1

公开(公告)日：2014-01-02

申请号：US13917330

申请日：2013-06-13

Applicant: NITTO DENKO CORPORATION

Inventor： Tomokazu Takahashi ,  Shinya Akizuki ,  Toshimasa Sugimura ,  Takeshi Matsumura ,  Daisuke Uenda

IPC: H01L33/46

CPC classification number: H01L33/46 ,  H01L21/6836 ,  H01L33/0079 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386

Abstract: A method of manufacturing an LED according to an embodiment of the present invention includes: back-grinding a substrate of an LED wafer including the substrate and a light emitting element formed on one surface of the substrate; forming, after the back-grinding, a reflective layer on an outer side of the substrate; and attaching, on an outer side of the light emitting element of the LED wafer, a heat-resistant pressure-sensitive adhesive sheet.

Abstract translation: 根据本发明的实施例的制造LED的方法包括：背面研磨包括所述基板的LED晶片的基板和形成在所述基板的一个表面上的发光元件; 在后研磨之后，在基板的外侧上形成反射层; 并且在所述LED晶片的发光元件的外侧附着耐热粘合片。

公开(公告)号：US20140004683A1

公开(公告)日：2014-01-02

申请号：US13924420

申请日：2013-06-21

Applicant: NITTO DENKO CORPORATION

Inventor： Shinya Akizuki ,  Toshimasa Sugimura ,  Daisuke Uenda ,  Takeshi Matsumura

IPC: H01L21/58

CPC classification number: H01L21/2007 ,  H01L21/02002 ,  H01L21/0495 ,  H01L21/6835 ,  H01L33/0079 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2924/0002 ,  H01L2924/0001

Abstract: A method of manufacturing a semiconductor element is provided. The method includes the steps of: bonding a substrate for transferring and a functional layer that is formed on a substrate for forming a functional layer with a temporary fixing layer interposed therebetween; removing the substrate for forming a functional layer to expose the functional layer; bonding a final substrate to the exposed functional layer; and separating the temporary fixing layer and the substrate for transferring from the functional layer, wherein the temporary fixing layer has (A) a specific shear adhering strength or has (B) a specific weight loss rate.

Abstract translation: 提供一种制造半导体元件的方法。 该方法包括以下步骤：将用于转印的基板和形成在用于形成功能层的基板上形成的功能层与其间插入临时固定层的方法相结合; 去除用于形成功能层的基板以暴露功能层; 将最终的基底粘合到暴露的功能层; 并且从功能层分离临时固定层和用于转移的基板，其中临时固定层具有（A）特定的剪切粘合强度或具有（B）比重损失率。

公开(公告)号：US09478454B2

公开(公告)日：2016-10-25

申请号：US14221314

申请日：2014-03-21

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai ,  Toshimasa Sugimura

IPC: H01L21/00 ,  H01L21/683 ,  H01L23/544 ,  C09J7/02 ,  H01L21/78 ,  H01L23/00

CPC classification number: H01L21/6836 ,  C09J7/22 ,  C09J7/38 ,  C09J2203/326 ,  C09J2205/31 ,  H01L21/78 ,  H01L23/544 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2223/54486 ,  H01L2224/16225 ,  H01L2924/12042 ,  Y10T428/1467 ,  Y10T428/1471 ,  Y10T428/28 ,  H01L2924/00

Abstract: The present invention provides a dicing tape-integrated film for semiconductor back surface, including a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape, the dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material, the film for flip chip type semiconductor back surface being formed on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer whose pressure-sensitive adhesive force toward the film for flip chip type semiconductor back surface is decreased by irradiation with a radiation ray.

Abstract translation: 本发明提供了一种用于半导体背面的切割带集成膜，包括用于倒装芯片型半导体背表面的膜，用于保护连接到被粘物上的半导体元件倒装芯片的后表面和切割带，切割带 包括基材和设置在基材上的压敏粘合剂层，在压敏粘合剂层上形成用于倒装芯片型半导体背表面的膜，其中压敏粘合剂层是可辐射固化压力 敏感粘合剂层，其通过用辐射线照射而降低了对于倒装芯片型半导体背表面的膜的压敏粘合力。