公开(公告)号：US10699877B2

公开(公告)日：2020-06-30

申请号：US16401318

申请日：2019-05-02

Applicant: NUFLARE TECHNOLOGY, INC.

Inventor： Haruyuki Nomura ,  Takashi Kamikubo

IPC: H01J37/317 ,  G03F7/20 ,  H01J37/304

Abstract: A charged-particle beam writing apparatus includes a writing chamber to house a stage having a writing object placed thereon, a beam irradiator to irradiate a charged particle beam to the writing object placed on the stage, a stage driver to move the stage, a temperature distribution calculator to calculate temperature distribution of the writing object caused by a heat source in the writing chamber, based on movement history information of the stage, a deformed amount calculator to calculate a deformed amount of the writing object based on a constraint condition of the writing object placed on the stage and the calculated temperature distribution, and a position corrector to correct an irradiation position of the charged particle beam to the writing object based on the calculated deformed amount. The beam irradiator irradiates the charged particle beam based on the irradiation position corrected by the position corrector.

公开(公告)号：US20190355553A1

公开(公告)日：2019-11-21

申请号：US16401318

申请日：2019-05-02

Applicant: NUFLARE TECHNOLOGY, INC.

Inventor： Haruyuki NOMURA ,  Takashi Kamikubo

IPC: H01J37/317 ,  H01J37/304 ,  G03F7/20

Abstract: A charged-particle beam writing apparatus includes a writing chamber to house a stage having a writing object placed thereon, a beam irradiator to irradiate a charged particle beam to the writing object placed on the stage, a stage driver to move the stage, a temperature distribution calculator to calculate temperature distribution of the writing object caused by a heat source in the writing chamber, based on movement history information of the stage, a deformed amount calculator to calculate a deformed amount of the writing object based on a constraint condition of the writing object placed on the stage and the calculated temperature distribution, and a position corrector to correct an irradiation position of the charged particle beam to the writing object based on the calculated deformed amount. The beam irradiator irradiates the charged particle beam based on the irradiation position corrected by the position corrector.

公开(公告)号：US09159535B2

公开(公告)日：2015-10-13

申请号：US14327900

申请日：2014-07-10

Applicant: NuFlare Technology, Inc.

Inventor： Takashi Kamikubo

IPC: H01J37/00 ,  H01J37/317

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J2237/0435 ,  H01J2237/31798

Abstract: A multi charged particle beam writing apparatus includes a beam forming member, where first openings for writing and second openings not for writing around the first openings are formed, to form multiple beams for writing and to form multiple beams for measurement, plural mark members on a blanking aperture member arranged close to the height position where crossover is formed, a measurement unit to measure positions of the multiple beams for measurement by the plural mark members, and a correction unit to correct a voltage for making a “beam on” state applied to one of the plural blankers, in order to correct a position deviation amount of a measured position.

Abstract translation: 多带电粒子束写入装置包括一个波束形成构件，其中形成用于书写的第一开口和不用于围绕第一开口写入的第二开口，以形成用于书写的多个波束并形成多个用于测量的波束，多个标记构件 设置在靠近形成交叉的高度位置的消隐孔径部件，测量单元，用于测量由多个标记部件测量的多个光束的位置;以及校正单元，用于校正用于使“光束接通”状态施加到 为了校正测量位置的位置偏差量，多个消隐器之一。

公开(公告)号：US09343323B2

公开(公告)日：2016-05-17

申请号：US14732001

申请日：2015-06-05

Applicant: NuFlare Technology, Inc.

Inventor： Takashi Kamikubo

IPC: H01L21/308 ,  H01L21/78 ,  H01L21/84 ,  H01L21/306

CPC classification number: H01L21/84 ,  H01J37/09 ,  H01J37/3174 ,  H01J2237/0451 ,  H01J2237/31776

Abstract: In one embodiment, an aperture member producing method includes applying a charged particle beam to a plurality of chip areas on a first substrate while changing a writing condition to write a first pattern corresponding to an aperture opening, processing the first substrate based on the written first pattern to form a second pattern, cutting out a chip area provided with the second pattern having desired accuracy from the first substrate to produce a template, allowing the template to come into contact with a resist overlying a front surface of a second substrate, separating the template from the hardened resist to pattern the resist with a transfer pattern, processing the second substrate using the transfer pattern as a mask to form a first recess, and etching a rear surface of the second substrate to form a second recess communicating with the first recess.

Abstract translation: 在一个实施例中，一种孔径构件的制造方法包括：在改变写入条件的同时，向第一衬底上的多个芯片区域施加带电粒子束以写入对应于孔径开口的第一图案，基于所写入的第一衬底来处理第一衬底 形成第二图案，从第一基板切出具有期望精度的第二图案的芯片区域以产生模板，从而允许模板与覆盖在第二基板的前表面上的抗蚀剂接触， 模板，用转印图案对抗蚀剂进行图案化，使用转印图案作为掩模处理第二基板以形成第一凹部，并且蚀刻第二基板的后表面以形成与第一凹部连通的第二凹部 。

公开(公告)号：US08835881B2

公开(公告)日：2014-09-16

申请号：US13914772

申请日：2013-06-11

Applicant: NuFlare Technology, Inc.

Inventor： Takashi Kamikubo

IPC: G03F7/20 ,  G21K5/04 ,  H01J37/317 ,  H01J37/304 ,  H01J37/30

CPC classification number: H01J37/3002 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177

Abstract: A writing area of a sample is divided into a plurality of stripes having a width corresponding to an area density of a pattern to be written on the sample with a charged-particle beam. The writing is stopped when writing of at least one stripe is terminated, and a drift amount is measured. An irradiation position of the charged-particle beam is corrected with the use of the drift amount. When the average value of the area density is more than a predetermined value, a stripe has a width smaller than the reference width, and when the average value of the area density is less than the predetermined value, the stripe has a width larger than the reference width. The width of the stripe is preferably a width corresponding to the variation of a drift from the beginning of irradiation with the charged-particle beam.

Abstract translation: 样本的写入区域被划分为具有与要被写入样本的图案的面积密度相对应的宽度的多个条带，其带有带电粒子束。 在写入至少一个条带时终止书写，并测量漂移量。 利用漂移量来校正带电粒子束的照射位置。 当面积密度的平均值大于预定值时，条纹具有小于参考宽度的宽度，并且当面积密度的平均值小于预定值时，条纹的宽度大于 参考宽度 条带的宽度优选地是对应于从带电粒子束的照射开始的漂移的变化的宽度。