公开(公告)号：US11651126B2

公开(公告)日：2023-05-16

申请号：US17239977

申请日：2021-04-26

Applicant: Battelle Memorial Institute

Inventor： Adam G. Kimura ,  Andrew S. Elliott ,  Daniel A. Perkins

IPC: G06F30/00 ,  G06F30/323 ,  G06F30/327 ,  G06F30/33 ,  G06F117/06

CPC classification number: G06F30/323 ,  G06F30/327 ,  G06F30/33 ,  G06F2117/06 ,  H01J2237/31798

Abstract: A Register Transfer Level (RTL) representation is recovered from a netlist representing an integrated circuit (IC). The netlist is converted to a graph comprising nodes belonging to a set of node types and edges connecting the nodes. The set of node types includes an instance node type representing an electronic component and a wire node type representing signal transfer between components. The graph is converted to a standardized graph by replacing subgraphs of the graph with standardized subgraphs. An RTL representation of the standardized graph is generated by operations including building signal declarations in a hardware description language (HDL) from the wire nodes of the standardized graph and building signal assignments in the HDL from instance nodes of the standardized graph.

公开(公告)号：US20180233456A1

公开(公告)日：2018-08-16

申请号：US15879577

申请日：2018-01-25

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Guido Rademaker ,  Salim Boutami ,  Jonathan Pradelles

IPC: H01L23/544 ,  H01L21/66 ,  H01L21/68 ,  H01L21/67 ,  H01J37/317 ,  G01B11/27

CPC classification number: H01L23/544 ,  G01B11/272 ,  G01N21/554 ,  G03F1/78 ,  G03F1/84 ,  G03F7/70633 ,  G03F7/70683 ,  H01J37/3174 ,  H01J2237/31798 ,  H01L21/67259 ,  H01L21/68 ,  H01L22/10 ,  H01L2223/5442 ,  H01L2223/54426

Abstract: This method for measuring the misalignment between a first and a second etching zone includes: producing a plasmonic antenna including a first and a second element that are separate and each delineate a cavity on one respective side, all of the elements of the plasmonic antenna that are situated on a first side of a separating plane being produced entirely inside the first zone and all of the elements of the plasmonic antenna that are situated on the second side of the separating plane being produced entirely inside the second zone, and after the production of the plasmonic antenna, the method includes: measuring the absorption rate of the plasmonic antenna, and determining the magnitude of the misalignment between the first and second zones on the basis of the measured absorption rate and of a predicted value for this absorption rate in the absence of a misalignment.

公开(公告)号：US09960012B2

公开(公告)日：2018-05-01

申请号：US15451655

申请日：2017-03-07

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Josef Biberger ,  Roland Salzer

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/26 ,  H01J37/28

CPC classification number: H01J37/3045 ,  H01J37/26 ,  H01J37/28 ,  H01J37/3177 ,  H01J2237/31732 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01J2237/31798

Abstract: A includes arranging a substrate in a working region of a first particle beam column and a second particle beam column; producing a desired target structure on the substrate by directing a first particle beam generated by the first particle beam column at a multiplicity of sites of the substrate to deposit material thereon or to remove material therefrom; repeatedly interrupting the production of the desired target structure and producing a marking on the substrate by directing the first particle beam onto the substrate and continuing the production of the desired target structure; and capturing positions of the markings on the substrate by directing a second particle beam produced by the second particle beam column onto the markings on the substrate, and detecting particles or radiation which are produced in the process by the second particle beam on the substrate.

公开(公告)号：US20160377425A1

公开(公告)日：2016-12-29

申请号：US15170881

申请日：2016-06-01

Applicant: KLA-Tencor Corporation

Inventor： Ajay Gupta ,  Thanh Huy Ha ,  Olivier Moreau ,  Kumar Raja

IPC: G01B15/00 ,  H01J37/22 ,  G01B11/27 ,  H01L21/67 ,  H01L21/68

CPC classification number: H01J37/222 ,  G03F7/70633 ,  H01J2237/221 ,  H01J2237/24578 ,  H01J2237/31798

Abstract: Methods and systems for determining overlay error between different patterned features of a design printed on a wafer in a multi-patterning step process are provided. For multi-patterning step designs, the design for a first patterning step is used as a reference and designs for each of the remaining patterning steps are synthetically shifted until the synthetically shifted designs have the best global alignment with the entire image based on global image-to-design alignment. The final synthetic shift of each design for each patterning step relative to the design for the first patterning step provides a measurement of relative overlay error between any two features printed on the wafer using multi-patterning technology.

Abstract translation: 提供了用于在多图案化步骤过程中确定印刷在晶片上的设计的不同图案特征之间确定覆盖误差的方法和系统。 对于多图案化步骤设计，将第一图案化步骤的设计用作参考，并且对于每个剩余的图案化步骤的设计被合成移位，直到合成移位的设计基于全局图像步骤与整个图像具有最佳的全局对准， 设计对齐。 相对于第一图案化步骤的设计，每个图案化步骤的每个设计的最终合成位移提供了使用多图案化技术印刷在晶片上的任何两个特征之间的相对重叠误差的测量。

公开(公告)号：US09484188B2

公开(公告)日：2016-11-01

申请号：US14644261

申请日：2015-03-11

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Niels Vergeer

IPC: G03F1/00 ,  G03F9/00 ,  H01J37/317 ,  G01N21/88

CPC classification number: H01J37/3177 ,  G01N21/88 ,  G03F9/7088 ,  H01J37/3045 ,  H01J2237/2482 ,  H01J2237/30433 ,  H01J2237/31798

Abstract: Methods and systems for verification of a mark written on a target surface during a multiple beam lithography process, and for verifying beam position of individual beams on the target surface based on mark verification are disclosed. A mark can be verified by scanning an optical beam over the mark and measuring the reflected optical beam and the position of the target with respect to the optical beam. By comparing the intensity of the reflected light as a function of distance over the mark with reference mark data representing an intended definition of the mark, and any deviation between the measured representation and the reference mark data are determined. If any deviation deviate more than the predetermined limit, incorrectly positioned beams can be verified from the data.

公开(公告)号：US20160013017A1

公开(公告)日：2016-01-14

申请号：US14861737

申请日：2015-09-22

Applicant: Frederick A. Flitsch

Inventor： Frederick A. Flitsch

IPC: H01J37/317 ,  H01J37/248 ,  H05K3/32 ,  H01J37/20

CPC classification number: H01J37/244 ,  B82B3/00 ,  G03F9/00 ,  H01J9/022 ,  H01J37/06 ,  H01J37/08 ,  H01J37/20 ,  H01J37/248 ,  H01J37/317 ,  H01J37/3177 ,  H01J2237/1205 ,  H01J2237/20 ,  H01J2237/303 ,  H01J2237/304 ,  H01J2237/3174 ,  H01J2237/31759 ,  H01J2237/31798 ,  Y10T29/49004

Abstract: The present invention provides apparatus for an imaging system comprising a multitude of imaging elements upon a substrate. In some embodiments the substrate may be approximately round with a radius of approximately one inch. Various methods relating to using and producing an imaging system are discussed.

Abstract translation: 本发明提供一种用于成像系统的装置，其包括在基板上的多个成像元件。 在一些实施例中，基底可以近似圆形，半径约为一英寸。 讨论了与使用和产生成像系统有关的各种方法。

公开(公告)号：US20130115723A1

公开(公告)日：2013-05-09

申请号：US13656186

申请日：2012-10-19

Applicant: Advantest Corporation

Inventor： Masahiro Ishida ,  Daisuke Watanabe ,  Masayuki Kawanabe

IPC: H01L21/66 ,  G03B27/42

CPC classification number: H01L22/14 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/31754 ,  H01J2237/31793 ,  H01J2237/31798 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method of manufacturing a semiconductor device using an electron beam lithography apparatus configured to emit an electron beam to perform lithography of a pattern, processing including pattern formation with the electron beam lithography apparatus is performed on a wafer, and an electric characteristic of the thus manufactured semiconductor devices is measured by a semiconductor testing apparatus. Then, electron beam lithography data to be used by the electron beam lithography apparatus is adjusted based on a result of measurement of the electric characteristic so as to reduce a variation in the electric characteristic of the semiconductor device within a surface of the wafer.

Abstract translation: 在使用电子束光刻设备制造半导体器件的方法中，该电子束光刻设备被配置为发射电子束以执行图案的光刻，在晶片上执行包括用电子束光刻设备形成图案的处理，并且由此 通过半导体测试装置测量制造的半导体器件。 然后，基于电特性的测量结果来调整要由电子束光刻设备使用的电子束光刻数据，以减少半导体器件在晶片表面内的电特性的变化。

公开(公告)号：US20070103659A1

公开(公告)日：2007-05-10

申请号：US11555478

申请日：2006-11-01

Applicant: Shusuke YOSHITAKE ,  Shuichi Tamamushi

Inventor： Shusuke YOSHITAKE ,  Shuichi Tamamushi

IPC: G03B27/42

CPC classification number: G03F7/70783 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70708 ,  H01J37/3174 ,  H01J2237/31798

Abstract: A charged particle beam writing method includes measuring a topography of a backside of a substrate without an influence of a gravity sag, calculating a first positional deviation amount of a pattern written on a frontside of the substrate in a case of the backside of the substrate having been corrected to be flat, based on the the backside topography of the substrate, calculating a first coefficient of a first approximate expression indicating a positional deviation correction amount for correcting the first positional deviation amount, based on the first positional deviation amount, adding the first coefficient to a second coefficient of a second approximate expression indicating a positional deviation correction amount for correcting a second positional deviation amount of the pattern written on the frontside of the substrate in a case of the backside of the substrate having not been corrected to be flat, and writing the pattern on the frontside of the substrate utilizing a charged particle beam, based on one of a positional deviation correction amount obtained by a third approximate expression indicating a positional deviation correction amount using a third coefficient obtained as a result of the adding, and the positional deviation correction obtained by the second approximate expression.

Abstract translation: 带电粒子束写入方法包括在不受重力下垂的影响的情况下测量衬底背面的形貌，计算在衬底的背面形成的图案的第一位置偏移量，该衬底的背面具有 基于基板的背面形状校正为平坦，基于第一位置偏差量，计算指示用于校正第一位置偏差量的位置偏差校正量的第一近似表达式的第一系数， 系数为第二近似表达式的第二系数，表示在未校正的基板的背面为平坦的情况下，用于校正写入基板的正面的图案的第二位置偏移量的位置偏差校正量， 并使用带电的方式将图案写入衬底的前侧 基于通过第三近似表达式获得的位置偏差校正量中的一个，所述第三近似表达式指示使用作为相加结果获得的第三系数的位置偏差校正量和通过第二近似表达式获得的位置偏差校正之一。

公开(公告)号：US06979822B1

公开(公告)日：2005-12-27

申请号：US10801981

申请日：2004-03-16

Applicant: Diane K. Stewart ,  W. Ralph Knowles ,  Brian T. Kimball

Inventor： Diane K. Stewart ,  W. Ralph Knowles ,  Brian T. Kimball

IPC: H01J37/244 ,  G01N23/00 ,  G01N23/225 ,  H01J37/02 ,  H01J37/252 ,  H01J37/28 ,  H01J37/317 ,  H01L21/027

CPC classification number: G01N23/225 ,  H01J37/244 ,  H01J2237/0045 ,  H01J2237/2817 ,  H01J2237/31737 ,  H01J2237/31742 ,  H01J2237/31798

Abstract: A charged particle beam system uses an ion generator for charge neutralization. In some embodiments, the ion generator is configured to maintain an adequate gas pressure at the ion generator to generate ions, but a reduced pressure in the remainder of the vacuum chamber, so that another column can operate in the chamber either simultaneously or after an evacuation process that is much shorter than a process that would be required to evacuate the chamber from the full pressure required at the ion generator. The invention is particularly useful for repair of photolithography masks in a dual beam system.

Abstract translation: 带电粒子束系统使用离子发生器进行电荷中和。 在一些实施例中，离子发生器被配置为在离子发生器处保持​​足够的气体压力以在真空室的其余部分中产生离子而减小压力，使得另一个柱可以同时或在排空之后在腔室中操作 该过程远远短于将离子发生器所需的全部压力从室内排出所需的过程。 本发明对于双光束系统中的光刻掩模的修复特别有用。

公开(公告)号：US20180138012A1

公开(公告)日：2018-05-17

申请号：US15806564

申请日：2017-11-08

Applicant: NuFlare Technology, Inc.

Inventor： Osamu IIZUKA ,  Yukitaka SHIMIZU

IPC: H01J37/317 ,  H01J37/04 ,  H01J37/20 ,  H01J37/147 ,  H01J37/244 ,  H01J37/302

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J37/3023 ,  H01J37/304 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/24535 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/31774 ,  H01J2237/31798

Abstract: In one embodiment, a multi charged particle beam writing apparatus includes an aperture plate having a plurality of holes to form multiple beams, a blanking aperture array having a plurality of blankers which switch ON-OFF of corresponding respective beams among the multiple beams, a stage on which a writing target substrate is placed, an inspection aperture provided on the stage and that allows one beam among the multiple beams to pass therethrough, a deflector deflecting the multiple beams, a current detector detecting a beam current of each of the multiple beams that has passed through the inspection aperture in a case where the multiple beams are scanned on the inspection aperture, and a control computing machine that generates a beam image based on the detected beam current and detects a defect of the blanking aperture array or the aperture plate based on the beam image.