公开(公告)号：US20150303026A1

公开(公告)日：2015-10-22

申请号：US14663971

申请日：2015-03-20

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki NOMURA

IPC: H01J37/147 ,  H01J37/10 ,  H01J37/04

CPC classification number: H01J37/1471 ,  H01J37/045 ,  H01J37/10 ,  H01J2237/043 ,  H01J2237/063 ,  H01J2237/06375 ,  H01J2237/1502

Abstract: An electron beam writing apparatus includes an electron gun system to emit an electron beam, a height adjustment unit, arranged at the downstream side compared to the electron gun system with respect to the optical axis direction, to variably adjust a height position of the electron gun system, an electron lens, arranged at the downstream side compared to the height adjustment unit with respect to the optical axis direction, to converge the electron beam, a lens control unit to control, for each variably adjusted and changed height position of the electron gun system, the electron lens such that the electron beam forms a crossover at a predetermined position, and an objective lens, arranged at the downstream side compared to the electron lens with respect to the optical axis direction, to focus the electron beam having passed the electron lens.

Abstract translation: 电子束写入装置包括与电子枪系统相对于光轴方向布置在下游侧的发射电子束的电子枪系统，高度调节单元，以可变地调节电子枪的高度位置 系统，电子透镜，相对于光轴方向布置在与高度调节单元相比的下游侧，以使电子束会聚;透镜控制单元，用于控制电子枪的每个可变调节和改变的高度位置 系统，使电子束在预定位置形成交叉的电子透镜，以及与电子透镜相对于光轴方向配置在下游侧的物镜，以聚焦通过电子的电子束 镜片。

公开(公告)号：US20190004429A1

公开(公告)日：2019-01-03

申请号：US16111732

申请日：2018-08-24

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki NOMURA

IPC: G03F7/20 ,  H01J37/31

Abstract: A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.

公开(公告)号：US20170139327A1

公开(公告)日：2017-05-18

申请号：US15342234

申请日：2016-11-03

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki NOMURA

IPC: G03F7/20

CPC classification number: G03F7/2061 ,  G03F7/70516 ,  H01J37/31

Abstract: A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.

公开(公告)号：US20240242931A1

公开(公告)日：2024-07-18

申请号：US18004018

申请日：2022-04-26

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki NOMURA

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3177 ,  H01J2237/24507 ,  H01J2237/24585

Abstract: According to one aspect of the present invention, a multiple charged particle beam writing includes: a dose representative value calculator unit configured to calculate, for each divided mesh region, a representative value of a plurality of doses of a plurality of beams with which an inside of the mesh region is irradiated as a dose representative value; a calculation processing unit configured to perform a calculation process of a rising temperature given to a mesh region of interest being one of the plurality of mesh regions by heat due to beam irradiation to each of the plurality of mesh regions in a processing region corresponding to the beam array region, the calculation process being performed by a convolution process using the dose representative value for each of the plurality of mesh regions and a thermal spread function representing thermal spread generated by the plurality of mesh regions; an effective temperature calculator unit configured to perform a repetitive process of repeating the calculation process while shifting a position of the processing region in the second direction on the stripe region and to calculate, as an effective temperature of the mesh region of interest, a representative value of a plurality of the rising temperatures obtained by performing the repetitive process a plurality of times until the mesh region of interest reaches, from one end of the processing region in the second direction, the other end; and a dose corrector unit configured to correct, using the effective temperature, doses of a plurality of beams with which each mesh region of interest is irradiated.

公开(公告)号：US20240087845A1

公开(公告)日：2024-03-14

申请号：US18355681

申请日：2023-07-20

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki NOMURA ,  Hirofumi MORITA

IPC: H01J37/317 ,  G03F7/20 ,  H01J37/302

CPC classification number: H01J37/3175 ,  G03F7/2061 ,  H01J37/3026 ,  H01J2237/31776

Abstract: An electron beam writing apparatus according to the present invention includes a potential regulating member arranged to be upstream of a target object in the case where the target object is placed on a stage, and configured to be set to have a fixed potential being positive with respect to the target object, a potential applying circuit configured to apply a voltage to the target object or the potential regulating member so that the potential regulating member has the fixed potential, and a correction circuit configured to correct a positional deviation of the electron beam on a surface of the target object which occurs in the case where the target object is irradiated with the electron beam in the state in which the potential regulating member has the fixed potential.

公开(公告)号：US20230290608A1

公开(公告)日：2023-09-14

申请号：US18167919

申请日：2023-02-13

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki NOMURA ,  Noriaki NAKAYAMADA

IPC: H01J37/317 ,  H01J37/302 ,  H01J37/147

CPC classification number: H01J37/3174 ,  H01J37/3026 ,  H01J37/1472 ,  H01J2237/31769 ,  H01J2237/24507 ,  H01J2237/31776

Abstract: In a charged particle beam writing method according to an embodiment, a charged particle beam is deflected by a deflector, and a pattern is written by irradiating, with the charged particle beam, a substrate having a resist film formed thereon. The method includes irradiating a pattern region, in which a pattern is to be formed, with a beam at a first dose, irradiating at least part of a non-pattern region, in which a pattern is not to be formed, with the charged particle beam at a second dose, at which the resist film is not dissolved away, and determining the second dose based on the first dose and a charge amount of the resist film corresponding to a pattern density of the pattern region, wherein a charge amount difference between the pattern region and a non-dissolution irradiation region, which is irradiated at the second dose, is smaller than that obtained when the second dose is zero.

公开(公告)号：US20250104964A1

公开(公告)日：2025-03-27

申请号：US18904069

申请日：2024-10-01

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki NOMURA ,  Shingo MORI

IPC: H01J37/304 ,  H01J37/317

Abstract: Method for calculating an effective temperature of a multi-charged-particle-beam writing region includes calculating a representative value of a dose of a beam to be applied to a mesh region concerned, as a dose representative value, for each of plural mesh regions obtained by dividing, in a writing direction and a linearly independent first direction to the writing direction, a writing region of a target object to be irradiated with multiple-charged-particle-beams; and calculating, as an effective temperature of each of the plural mesh regions, a representative value of an increased temperature given to each of the plural mesh regions by heat due to beam irradiation, by performing convolution processing between the dose representative value and a kernel determined by a speed of a stage with the target object thereon, and a size in the writing direction of a beam array region of the multiple-charged-particle-beams on the surface of the target object.

公开(公告)号：US20230102923A1

公开(公告)日：2023-03-30

申请号：US18053135

申请日：2022-11-07

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki NOMURA ,  Takahito NAKAYAMA

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/244 ,  G03F7/20

Abstract: The purpose of the present invention is to correct a beam irradiation position shift caused by charging phenomena with high accuracy. A charged particle beam writing method includes virtually dividing a writing region of the substrate so as to have a predetermined mesh size and calculating a pattern density distribution representing an arrangement ratio of the pattern for each mesh region, calculating a dose distribution using the pattern density distribution, calculating an irradiation amount distribution using the pattern density distribution and the dose distribution, calculating a fogging charged particle amount distribution, calculating a charge amount distribution due to direct charge and a charge amount distribution due to fogging charge, calculating a position shift of a writing position based on the charge amount distribution due to direct charge and the charge amount distribution due to fogging charge, correcting an irradiation position using the position shift, and irradiating the corrected irradiation position with the charged particle beam with which a potential of a surface of the substrate becomes higher than a potential of a bottom surface of ae potential regulation member.

公开(公告)号：US20230029715A1

公开(公告)日：2023-02-02

申请号：US17956021

申请日：2022-09-29

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki NOMURA ,  Noriaki NAKAYAMADA

IPC: H01J37/317 ,  H01J37/302

Abstract: An amount of charge of a substrate is promptly and accurately calculated. A charged particle beam writing method includes a step (S100) for virtually dividing a writing region of the writing target substrate in a mesh-like manner and calculating a pattern density representing an arrangement ratio of the pattern for each mesh region, a step (S102) for calculating a dose for each mesh region using the pattern density, a step (S104) for calculating a charge amount based on a film thickness of the resist film formed on the substrate and the calculated dose by using a predetermined function for charge amount calculation, the function using, as variables, the film thickness of the resist film and the dose, a step (S106) for calculating a position shift amount of a writing position from the calculated charge amount, and a step (S108) for correcting an irradiation position of the charged particle beam using the position shift amount.

公开(公告)号：US20210241995A1

公开(公告)日：2021-08-05

申请号：US17236007

申请日：2021-04-21

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki NOMURA ,  Noriaki NAKAYAMADA

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/153 ,  H01J37/12 ,  H01J37/302 ,  H01L21/027 ,  G03F7/20

Abstract: Position shifts caused by charging phenomena can be corrected with high accuracy. A charged particle beam writing apparatus includes an exposure-amount distribution calculator calculating an exposure amount distribution of a charged particle beam using a pattern density distribution and a dose distribution, a fogging charged particle amount distribution calculator calculating a plurality of fogging charged particle amount distributions by convoluting each of a plurality of distribution functions for fogging charged particles with the exposure amount distribution, a charge-amount distribution calculator calculating a charge amount distribution due to direct charge using the pattern density distribution, the dose distribution, and the exposure amount distribution, and calculating a plurality of charge amount distributions due to fogging charge using the plurality of fogging charged particle amount distributions, a position shift amount calculator calculating a position shift amount of a writing position based on the charge amount distribution due to direct charge and the plurality of charge amount distributions due to fogging charge, a corrector correcting an exposure position using the position shift amount, and a writer exposing the corrected exposure position to a charged particle beam.