公开(公告)号：US20230307402A1

公开(公告)日：2023-09-28

申请号：US18327178

申请日：2023-06-01

Applicant: NXP B.V.

Inventor： Tsung Nan Lo ,  Sharon Huey Lin Tay ,  Antonio Aguinaldo Marquez Macatangay

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/532

CPC classification number: H01L24/16 ,  H01L23/49811 ,  H01L23/53228 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/081 ,  H01L2924/01029

Abstract: A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity.

公开(公告)号：US11728308B2

公开(公告)日：2023-08-15

申请号：US17239888

申请日：2021-04-26

Applicant: NXP B.V.

Inventor： Tsung Nan Lo ,  Sharon Huey Lin Tay ,  Antonio Aguinaldo Marquez Macatangay

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/532

CPC classification number: H01L24/16 ,  H01L23/49811 ,  H01L23/53228 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/081 ,  H01L2924/01029

Abstract: A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity.

公开(公告)号：US20240014123A1

公开(公告)日：2024-01-11

申请号：US17810882

申请日：2022-07-06

Applicant: NXP B.V.

Inventor： Kuan-Hsiang Mao ,  Chin Teck Siong ,  Pey Fang Hiew ,  Wen Yuan Chuang ,  Sharon Huey Lin Tay ,  Wen Hung Huang

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L23/367

CPC classification number: H01L23/49861 ,  H01L24/16 ,  H01L24/81 ,  H01L23/49838 ,  H01L21/4839 ,  H01L21/4882 ,  H01L23/3675 ,  H01L2224/81203 ,  H01L2224/81207 ,  H01L2224/16245 ,  H01L23/49816 ,  H01L25/105

Abstract: A method of forming a semiconductor device is provided. The method includes placing a semiconductor die and a leadframe on a carrier substrate. The semiconductor die includes a plurality of bond pads and the leadframe includes a plurality of leads. A first lead of the plurality of leads has a proximal end affixed to a first bond pad of the plurality of bond pads and a distal end placed on the carrier substrate. At least a portion of the semiconductor die and the leadframe is encapsulated with an encapsulant. The carrier substrate is separated from a first major side of the encapsulated semiconductor die and leadframe exposing a distal end portion of the first lead. A package substrate is applied on the first major side.