公开(公告)号：US20230197797A1

公开(公告)日：2023-06-22

申请号：US17645280

申请日：2021-12-20

Applicant: NXP B.V.

Inventor： Congyong Zhu ,  Bernhard Grote ,  Bruce McRae Green

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/778 ,  H01L21/311 ,  H01L21/76 ,  H01L21/765 ,  H01L29/66

CPC classification number: H01L29/402 ,  H01L21/765 ,  H01L21/7605 ,  H01L21/31116 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/66462

Abstract: Placement of a field plate in a field-effect transistor is optimized by using multiple dielectric layers such that a first end of field plate is separated from a channel region of the transistor by a first set of one or more distinct dielectric material layers. A second end of the field plate overlies the channel region and a control electrode from which it is separated by the first set of dielectric layers and one or more additional dielectric layers.

公开(公告)号：US20230197839A1

公开(公告)日：2023-06-22

申请号：US17645286

申请日：2021-12-20

Applicant: NXP B.V.

Inventor： Congyong Zhu ,  Bernhard Grote ,  Bruce McRae Green

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L29/66462 ,  H01L29/2003

Abstract: Placement of a field plate in a field-effect transistor is optimized by using multiple dielectric layers such that a first end of field plate is separated from a channel region of the transistor by a first set of one or more distinct dielectric material layers. A second end of the field plate overlies the channel region and a control electrode from which it is separated by the first set of dielectric layers and one or more additional dielectric layers.

公开(公告)号：US12148820B2

公开(公告)日：2024-11-19

申请号：US17645286

申请日：2021-12-20

Applicant: NXP B.V.

Inventor： Congyong Zhu ,  Bernhard Grote ,  Bruce McRae Green

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

Abstract: Placement of a field plate in a field-effect transistor is optimized by using multiple dielectric layers such that a first end of field plate is separated from a channel region of the transistor by a first set of one or more distinct dielectric material layers. A second end of the field plate overlies the channel region and a control electrode from which it is separated by the first set of dielectric layers and one or more additional dielectric layers.