公开(公告)号：US20150002966A1

公开(公告)日：2015-01-01

申请号：US14301445

申请日：2014-06-11

Applicant: NXP B.V.

Inventor： Michael In 't Zandt ,  Klaus Reimann ,  Olaf Wunnicke

IPC: H02H9/06 ,  H01J9/18 ,  H01J9/02

CPC classification number: H02H9/06 ,  H01J9/025 ,  H01J9/18 ,  H01L23/60 ,  H01L27/0288 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a method of forming an electric field gap device, such as a lateral field emission ESD protection structure, in which a cathode layer is formed between dielectric layers. Anode channels are formed and they are lined with a sacrificial dielectric layer. Conductive anode pillars are formed in the anode channels, and then the sacrificial dielectric layer is etched away in the vicinity of the anode pillars. The etching leaves a suspended portion of the cathode layer which defines a lateral gap to an adjacent anode pillar. This portion has a sharp end face defined by the corners of the cathode layer and the lateral gap can be defined accurately as it corresponds to the thickness of the sacrificial dielectric layer.

Abstract translation: 本发明提供一种形成诸如横向场发射ESD保护结构的电场间隙器件的方法，其中在电介质层之间形成阴极层。 形成阳极通道并且衬有牺牲介电层。 在阳极通道中形成导电阳极柱，然后在阳极柱附近刻蚀牺牲介电层。 蚀刻离开阴极层的悬浮部分，其限定与相邻阳极柱的横向间隙。 该部分具有由阴极层的角部限定的尖端面，并且可以精确地限定横向间隙，因为其对应于牺牲介电层的厚度。