公开(公告)号：US20120103263A1

公开(公告)日：2012-05-03

申请号：US13250906

申请日：2011-09-30

申请人： NYI O. MYO ,  John S. Webb ,  Masato Ishii ,  Xuebin Li ,  Zhiyuan Ye ,  Ali Zojaji

发明人： NYI O. MYO ,  John S. Webb ,  Masato Ishii ,  Xuebin Li ,  Zhiyuan Ye ,  Ali Zojaji

IPC分类号： C23C16/455 ,  C23C16/458

CPC分类号： C23C16/45591 ,  C23C16/45502 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/67386 ,  H01L21/687 ,  H01L21/68792

摘要： Embodiments of the present invention generally relates to apparatus for use in film depositions. The apparatus generally include pre-heat rings adapted to be positioned in a processing chamber. In one embodiment, a pre-heat ring includes a ring having an inner edge and an outer edge. The outer edge has a constant radius. The inner edge is oblong-shaped and may have a first portion having a constant radius measured from a center of a circle defined by an outer circumference of the ring. A second portion may have a constant radius measured from a location other than the center of the outer circumference. In another embodiment, a processing chamber includes a pre-heat ring positioned around the periphery of a substrate support. The pre-heat ring includes an inner edge having a first portion, a second portion, and one or more linear portions positioned between the first portion and the second portion.

摘要翻译： 本发明的实施例一般涉及用于膜沉积的装置。 该设备通常包括适于定位在处理室中的预热环。 在一个实施例中，预热环包括具有内边缘和外边缘的环。 外边缘具有恒定的半径。 内边缘是长圆形的，并且可以具有从由环的外圆周限定的圆的中心测量的具有恒定半径的第一部分。 第二部分可以具有从除了外圆周的中心之外的位置测量的恒定的半径。 在另一个实施例中，处理室包括围绕衬底支撑件的周边定位的预热环。 预热环包括具有第一部分，第二部分和位于第一部分和第二部分之间的一个或多个直线部分的内边缘。

公开(公告)号：US09890455B2

公开(公告)日：2018-02-13

申请号：US13250906

申请日：2011-09-30

申请人： Nyi O. Myo ,  John S. Webb ,  Masato Ishii ,  Xuebin Li ,  Zhiyuan Ye ,  Ali Zojaji

发明人： Nyi O. Myo ,  John S. Webb ,  Masato Ishii ,  Xuebin Li ,  Zhiyuan Ye ,  Ali Zojaji

IPC分类号： C23C16/455 ,  C23C16/458 ,  H01L21/687 ,  H01L21/673

CPC分类号： C23C16/45591 ,  C23C16/45502 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/67386 ,  H01L21/687 ,  H01L21/68792

摘要： Embodiments of the present invention generally relates to apparatus for use in film depositions. The apparatus generally include pre-heat rings adapted to be positioned in a processing chamber. In one embodiment, a pre-heat ring includes a ring having an inner edge and an outer edge. The outer edge has a constant radius. The inner edge is oblong-shaped and may have a first portion having a constant radius measured from a center of a circle defined by an outer circumference of the ring. A second portion may have a constant radius measured from a location other than the center of the outer circumference. In another embodiment, a processing chamber includes a pre-heat ring positioned around the periphery of a substrate support. The pre-heat ring includes an inner edge having a first portion, a second portion, and one or more linear portions positioned between the first portion and the second portion.

公开(公告)号：US20120193623A1

公开(公告)日：2012-08-02

申请号：US13193566

申请日：2011-07-28

申请人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

发明人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L29/36 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02664 ,  H01L21/823814 ,  H01L29/167 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Embodiments of the present invention generally relate to methods of forming epitaxial layers and devices having epitaxial layers. The methods generally include forming a first epitaxial layer including phosphorus and carbon on a substrate, and then forming a second epitaxial layer including phosphorus and carbon on the first epitaxial layer. The second epitaxial layer has a lower phosphorus concentration than the first epitaxial layer, which allows for selective etching of the second epitaxial layer and undesired amorphous silicon or polysilicon deposited during the depositions. The substrate is then exposed to an etchant to remove the second epitaxial layer and undesired amorphous silicon or polysilicon. The carbon present in the first and second epitaxial layers reduces phosphorus diffusion, which allows for higher phosphorus doping concentrations. The increased phosphorus concentrations reduce the resistivity of the final device. The devices include epitaxial layers having a resistivity of less than about 0.381 milliohm-centimeters.

摘要翻译： 本发明的实施例一般涉及形成外延层的方法和具有外延层的器件。 所述方法通常包括在衬底上形成包括磷和碳的第一外延层，然后在第一外延层上形成包括磷和碳的第二外延层。 第二外延层具有比第一外延层更低的磷浓度，其允许在沉积期间沉积的第二外延层和不期望的非晶硅或多晶硅的选择性蚀刻。 然后将衬底暴露于蚀刻剂以除去第二外延层和不期望的非晶硅或多晶硅。 存在于第一和第二外延层中的碳减少磷扩散，这允许更高的磷掺杂浓度。 增加的磷浓度降低了最终装置的电阻率。 这些器件包括具有小于约0.381毫欧姆厘米的电阻率的外延层。

公开(公告)号：US09012328B2

公开(公告)日：2015-04-21

申请号：US13193566

申请日：2011-07-28

申请人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

发明人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8238

CPC分类号： H01L29/36 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02664 ,  H01L21/823814 ,  H01L29/167 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Embodiments of the present invention generally relate to methods of forming epitaxial layers and devices having epitaxial layers. The methods generally include forming a first epitaxial layer including phosphorus and carbon on a substrate, and then forming a second epitaxial layer including phosphorus and carbon on the first epitaxial layer. The second epitaxial layer has a lower phosphorus concentration than the first epitaxial layer, which allows for selective etching of the second epitaxial layer and undesired amorphous silicon or polysilicon deposited during the depositions. The substrate is then exposed to an etchant to remove the second epitaxial layer and undesired amorphous silicon or polysilicon. The carbon present in the first and second epitaxial layers reduces phosphorus diffusion, which allows for higher phosphorus doping concentrations. The increased phosphorus concentrations reduce the resistivity of the final device. The devices include epitaxial layers having a resistivity of less than about 0.381 milliohm-centimeters.

摘要翻译： 本发明的实施例一般涉及形成外延层的方法和具有外延层的器件。 所述方法通常包括在衬底上形成包括磷和碳的第一外延层，然后在第一外延层上形成包括磷和碳的第二外延层。 第二外延层具有比第一外延层更低的磷浓度，其允许在沉积期间沉积的第二外延层和不期望的非晶硅或多晶硅的选择性蚀刻。 然后将衬底暴露于蚀刻剂以除去第二外延层和不期望的非晶硅或多晶硅。 存在于第一和第二外延层中的碳减少了磷扩散，这允许更高的磷掺杂浓度。 增加的磷浓度降低了最终装置的电阻率。 这些器件包括具有小于约0.381毫欧姆厘米的电阻率的外延层。

公开(公告)号：US08652945B2

公开(公告)日：2014-02-18

申请号：US13193576

申请日：2011-07-28

申请人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

发明人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02532 ,  H01L21/0257 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/1054 ,  H01L29/78

摘要： Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, and is formed without the addition of carbon. A phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater increases the tensile strain of the deposited layer, and thus, improves channel mobility. Since the epitaxial layer is substantially free of carbon, the epitaxial layer does not suffer from film formation and quality issues commonly associated with carbon-containing epitaxial layers.

摘要翻译： 本发明的实施例一般涉及在半导体器件上形成硅外延层的方法。 所述方法包括在增加的压力和降低的温度下在衬底上形成硅外延层。 硅外延层的磷浓度约为1×1021原子/立方厘米或更大，并且不添加碳形成。 大约1×1021原子/立方厘米或更大的磷浓度增加沉积层的拉伸应变，从而提高通道迁移率。 由于外延层基本上不含碳，外延层不会受到成膜和通常与含碳外延层相关的质量问题的影响。

公开(公告)号：US20120202338A1

公开(公告)日：2012-08-09

申请号：US13193576

申请日：2011-07-28

申请人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

发明人： Zhiyuan Ye ,  Xuebin Li ,  Saurabh Chopra ,  Yihwan Kim

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/0257 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/1054 ,  H01L29/78

摘要： Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, and is formed without the addition of carbon. A phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater increases the tensile strain of the deposited layer, and thus, improves channel mobility. Since the epitaxial layer is substantially free of carbon, the epitaxial layer does not suffer from film formation and quality issues commonly associated with carbon-containing epitaxial layers.

摘要翻译： 本发明的实施例一般涉及在半导体器件上形成硅外延层的方法。 所述方法包括在增加的压力和降低的温度下在衬底上形成硅外延层。 硅外延层的磷浓度约为1×1021原子/立方厘米或更大，并且不添加碳形成。 大约1×1021原子/立方厘米或更大的磷浓度增加沉积层的拉伸应变，从而提高通道迁移率。 由于外延层基本上不含碳，外延层不会受到成膜和通常与含碳外延层相关的质量问题的影响。

公开(公告)号：US20090226638A1

公开(公告)日：2009-09-10

申请号：US12397894

申请日：2009-03-04

申请人： Walt A. de Heer ,  Xuebin Li ,  Michael Sprinkle

发明人： Walt A. de Heer ,  Xuebin Li ,  Michael Sprinkle

IPC分类号： C23C14/28 ,  C23C16/26

CPC分类号： C23C26/00 ,  C30B23/02 ,  C30B29/02 ,  H01L21/0405

摘要： In a method of producing ultra-thin graphitic layers, a carbide crystal is placed into a graphitic enclosure. The carbide crystal and the graphitic enclosure are placed into a chamber. The carbide crystal and the graphitic enclosure are subjected to a predetermined environment. Once the predetermined environment is established, the carbide crystal and the graphitic enclosure are heated to a first temperature for a predetermined period of time sufficient to cause at least one non-carbon element to evaporate from a crystal face of the carbide crystal so as to form at least one graphitic layer on the crystal face of the carbide crystal.

摘要翻译： 在制造超薄石墨层的方法中，将碳化物晶体放置在石墨外壳中。 将碳化物晶体和石墨外壳放入室中。 碳化物晶体和石墨壳体经受预定的环境。 一旦建立了预定的环境，碳化物晶体和石墨外壳就被加热至第一温度一段足以使至少一个非碳元素从碳化物晶体的晶面蒸发的预定时间段，以形成 在碳化物晶体的晶面上至少有一个石墨层。

公开(公告)号：US08460764B2

公开(公告)日：2013-06-11

申请号：US12397894

申请日：2009-03-04

申请人： Walt A. de Heer ,  Xuebin Li ,  Michael Sprinkle

发明人： Walt A. de Heer ,  Xuebin Li ,  Michael Sprinkle

IPC分类号： C23C14/28 ,  H05B6/00

CPC分类号： C23C26/00 ,  C30B23/02 ,  C30B29/02 ,  H01L21/0405

摘要： In a method of producing ultra-thin graphitic layers, a carbide crystal is placed into a graphitic enclosure. The carbide crystal and the graphitic enclosure are placed into a chamber. The carbide crystal and the graphitic enclosure are subjected to a predetermined environment. Once the predetermined environment is established, the carbide crystal and the graphitic enclosure are heated to a first temperature for a predetermined period of time sufficient to cause at least one non-carbon element to evaporate from a crystal face of the carbide crystal so as to form at least one graphitic layer on the crystal face of the carbide crystal.

摘要翻译： 在制造超薄石墨层的方法中，将碳化物晶体放置在石墨外壳中。 将碳化物晶体和石墨外壳放入室中。 碳化物晶体和石墨外壳经历预定的环境。 一旦建立了预定的环境，碳化物晶体和石墨外壳就被加热至第一温度一段足以使至少一个非碳元素从碳化物晶体的晶面蒸发的预定时间段，以形成 在碳化物晶体的晶面上至少有一个石墨层。