公开(公告)号：US20240242982A1

公开(公告)日：2024-07-18

申请号：US18409764

申请日：2024-01-10

申请人： Naidun-tech Co., Ltd.

发明人： Cheng-Hsiung LEE ,  Chun-Hung HUNG ,  Chun-Hung HUNG ,  Fu-Chieh HSU

IPC分类号： H01L21/67 ,  F27B17/00 ,  F27D1/18 ,  F27D7/02 ,  F27D9/00

CPC分类号： H01L21/67109 ,  F27B17/0025 ,  F27D1/18 ,  F27D7/02 ,  F27D9/00 ,  H01L21/67017 ,  F27D2007/063

摘要： A semiconductor high pressure annealing device is described. The semiconductor high pressure annealing device includes a chamber body, a cover, a lifting mechanism, and a floating sealing structure. Air tightness between the chamber body and the cover is achieved by the floating sealing structure. A first sealing ring and a second sealing ring of the floating sealing structure are arranged on the top and the bottom for reducing the damage to the first sealing ring and the second sealing ring when the cover moves up and down. A preload spring assembly of the floating sealing structure can provide tension to assist in improving the air tightness between the chamber body and the cover.

公开(公告)号：US20240230231A1

公开(公告)日：2024-07-11

申请号：US18404917

申请日：2024-01-05

申请人： Naidun-tech Co., Ltd.

发明人： Cheng-Hsiung LEE ,  Chun-Hung HUNG ,  Chun-Hung HUNG ,  Fu-Chieh HSU

IPC分类号： F27B5/02 ,  H05B3/62

CPC分类号： F27B5/02 ,  H05B3/62 ,  H01L21/67109

摘要： A vertical dual-chamber annealing device is provided. The vertical dual-chamber annealing device includes an outer chamber unit, an inner chamber body, a temperature control unit, a supporting structure, and a gas-tight seal structure. The inner chamber body can be moved upward, such that the inner chamber body can be located in the outer chamber unit and supported by the supporting structure. After the supporting of the supporting structure is removed, the inner chamber body is moved downward and separated from the outer chamber unit. Therefore, an arrangement of the inner chamber body and the outer chamber unit can increase the convenience of cleaning and replacing the inner chamber body. The structure of the inner chamber body can enhance the uniformity of a reaction temperature. The gas-tight seal structure isolates an inert gas and a reactive gas, which is beneficial to the recovery and the reuse of the reactive gas.

公开(公告)号：US20240162003A1

公开(公告)日：2024-05-16

申请号：US18505133

申请日：2023-11-09

申请人： Naidun-tech Co., Ltd.

发明人： Chi-Wen CHEN ,  Chun-Huai LI ,  Chih-Hung CHEN ,  Chun-Hung HUNG

IPC分类号： H01J37/32

CPC分类号： H01J37/32073 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32981 ,  H01J2237/327 ,  H01J2237/332

摘要： A passivation equipment and a passivation method for a semiconductor device are provided in the present invention. The passivation equipment for the semiconductor device includes a chamber housing and a splitter disposed in the chamber housing. The splitter divides the chamber housing to a first chamber and a second chamber. The passivation equipment further includes a first intake tube connected to the first chamber, a plasma producing unit disposed in the first chamber and a pressure detecting unit connected to the first chamber. By using the passivation equipment of the present invention, high-pressure plasma is used to increase a passivation efficiency of the semiconductor device and decrease a temperature of a passivation reaction.