公开(公告)号：US20240088628A1

公开(公告)日：2024-03-14

申请号：US18260739

申请日：2022-03-07

Applicant: Nanyang Technological University

Inventor： Donguk NAM ,  Youngmin KIM ,  Yongduck JUNG ,  Daniel BURT ,  Hyo Jun JOO ,  Weijun FAN

IPC: H01S5/34 ,  H01S5/042 ,  H01S5/125 ,  H01S5/30

CPC classification number: H01S5/3427 ,  H01S5/0424 ,  H01S5/04257 ,  H01S5/125 ,  H01S5/3054 ,  H01S5/3403

Abstract: According to embodiments of the present invention, an optical device is provided. The optical device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer having a beam structure that is subjected to a tensile strain, wherein the beam structure includes a plurality of nanostructures, and wherein, for each nanostructure of the plurality of nanostructures, the nanostructure is configured to locally amplify the tensile strain at the nanostructure to define a strain-induced artificial quantum heterostructure for quantum confinement. According to a further embodiment of the present invention, a method of forming an optical device is also provided.