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公开(公告)号：US20240063605A1
公开(公告)日：2024-02-22
申请号：US18268026
申请日：2021-12-28
发明人： Donguk NAM , Youngmin KIM , Yongduck JUNG , Daniel BURT , Hyo Jun JOO
CPC分类号： H01S5/1017 , H01S5/125 , H01S5/3201 , H01S5/3223 , H01S5/0261 , H01S5/0014
摘要： According to embodiments of the present invention, an optical device is provided. The optical device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer having an initial tensile strain and including a monolithic crossbeam structure defined therein, and an optical cavity optically coupled to the monolithic crossbeam structure, wherein the monolithic crossbeam structure has a first beam and a second beam arranged at least substantially orthogonal to each other and intersecting each other at an intersection region, the intersection region being subjected to a tensile strain that is increased relative to the initial tensile strain. According to further embodiments of the present invention, a method of forming an optical device and a method of controlling an optical device are also provided.
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公开(公告)号：US20240088628A1
公开(公告)日：2024-03-14
申请号：US18260739
申请日：2022-03-07
发明人： Donguk NAM , Youngmin KIM , Yongduck JUNG , Daniel BURT , Hyo Jun JOO , Weijun FAN
CPC分类号： H01S5/3427 , H01S5/0424 , H01S5/04257 , H01S5/125 , H01S5/3054 , H01S5/3403
摘要： According to embodiments of the present invention, an optical device is provided. The optical device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer having a beam structure that is subjected to a tensile strain, wherein the beam structure includes a plurality of nanostructures, and wherein, for each nanostructure of the plurality of nanostructures, the nanostructure is configured to locally amplify the tensile strain at the nanostructure to define a strain-induced artificial quantum heterostructure for quantum confinement. According to a further embodiment of the present invention, a method of forming an optical device is also provided.
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公开(公告)号：US20240355967A1
公开(公告)日：2024-10-24
申请号：US18625406
申请日：2024-04-03
发明人： Donguk NAM , Daniel BURT , Yongduck JUNG , Youngmin KIM , Hyo Jun JOO
CPC分类号： H01L33/285 , H01L33/0083 , H01L33/10
摘要： Various embodiments may provide a light emission device including a stacked arrangement having a first pad region, a second pad region and a bridge region. At least a portion of the first pad region may include a portion of a first doped layer, while at least a portion of the second pad region may include a further portion of the first doped layer, a portion of a second doped layer, and a portion of an intrinsic layer. A percentage concentration of tin (Sn) of the intrinsic layer may be higher than that of the first doped layer, and that of the second doped layer. The light emission device may include a first tensile stressed metal pad in contact with the portion of the first doped layer, and a second tensile stressed metal pad in contact with the portion of the second doped layer.
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