公开(公告)号：US20230344200A1

公开(公告)日：2023-10-26

申请号：US18335469

申请日：2023-06-15

申请人： Acorn Semi, LLC

发明人： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC分类号： H01S5/32 ,  H01S5/22 ,  H01S5/125 ,  H01S5/187 ,  H01S5/34

CPC分类号： H01S5/3201 ,  H01S5/2203 ,  H01S5/3223 ,  H01S5/125 ,  H01S5/187 ,  H01S5/3224 ,  H01S5/3427 ,  H01S5/227

摘要： Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

公开(公告)号：US09478944B2

公开(公告)日：2016-10-25

申请号：US14460090

申请日：2014-08-14

申请人： Furukawa Electric Co., Ltd.

发明人： Hidehiro Taniguchi ,  Hirotatsu Ishii ,  Takeshi Namegaya

IPC分类号： H01S5/16 ,  H01S5/30 ,  H01S5/20 ,  H01S5/042 ,  H01S5/32 ,  H01S5/34

CPC分类号： H01S5/164 ,  H01S5/0421 ,  H01S5/162 ,  H01S5/168 ,  H01S5/2072 ,  H01S5/3054 ,  H01S5/3223 ,  H01S5/3427

摘要： A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.

摘要翻译： 半导体激光元件包括：窗口区域，其包括通过III族空位扩散形成的无序部分，通过在窗口区域上提供吸收预定原子的促进膜促进的扩散; 包括量子阱结构的有源层的非窗口区域; 并且在窗口区域中的能带间隙和非窗口区域中的能带间隙之间的差异等于或大于50meV。

公开(公告)号：US09330907B2

公开(公告)日：2016-05-03

申请号：US14512158

申请日：2014-10-10

申请人： The Board of Trustees of the Leland Stanford Junior University

发明人： Robert Chen ,  James S. Harris, Jr. ,  Suyog Gupta

IPC分类号： H01L21/02 ,  H01L21/00 ,  H01L29/161 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01S5/34 ,  H01L21/3065 ,  B81C1/00 ,  H01S5/10

CPC分类号： H01L21/02535 ,  B81C1/00111 ,  B81C1/00571 ,  B81C2201/014 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/161 ,  H01S5/1075 ,  H01S5/3427

摘要： Suspended structures are provided using selective etch technology. Such structures can be protected on all sides when the selective undercut etch is performed, thereby providing excellent control of feature geometry combined with superior material quality.

公开(公告)号：US09036672B2

公开(公告)日：2015-05-19

申请号：US14256758

申请日：2014-04-18

申请人： Acorn Technologies, Inc.

发明人： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC分类号： H01S5/00 ,  H01S5/32 ,  H01L31/0352 ,  H01L33/34 ,  B82Y20/00 ,  H01L31/028 ,  H01L31/18 ,  H01S5/125 ,  H01S5/187 ,  H01S5/22 ,  H01S5/227

CPC分类号： H01S5/187 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3201 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

摘要： Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

摘要翻译： 提供拉伸应变锗，其可以被充分应变以提供几乎直接的带隙材料或直接带隙材料。 与锗区接触的压应力或拉应力应力源材料在锗区域引起单轴或双轴拉伸应变。 应力材料可以包括氮化硅或硅锗。 所得到的应变锗结构可用于发射或检测光子，包括例如在谐振腔内产生光子以提供激光。

公开(公告)号：US20150014632A1

公开(公告)日：2015-01-15

申请号：US14504114

申请日：2014-10-01

申请人： Matthew H. Kim

发明人： Matthew H. Kim

IPC分类号： H01L29/737 ,  H01L29/165 ,  H01L29/12 ,  H01L29/20 ,  H01L29/10 ,  H01S5/34 ,  H01S5/183 ,  H01S5/062 ,  H01L29/267 ,  H01L29/08

CPC分类号： H01L29/7378 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/122 ,  H01L29/165 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66242 ,  H01L29/7371 ,  H01L33/0004 ,  H01S5/0202 ,  H01S5/0218 ,  H01S5/06203 ,  H01S5/3412 ,  H01S5/3427

摘要： Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

摘要翻译： 本文描述了包括异质结晶体管，晶体管激光器和太阳能电池及其相关结构的先进电子和光子结构的制造方法。 本文还公开了其它实施例。

公开(公告)号：US08842707B2

公开(公告)日：2014-09-23

申请号：US12716315

申请日：2010-03-03

申请人： Hidehiro Taniguchi ,  Hirotatsu Ishii ,  Takeshi Namegaya

发明人： Hidehiro Taniguchi ,  Hirotatsu Ishii ,  Takeshi Namegaya

IPC分类号： H01S5/00 ,  H01S5/16 ,  H01S5/20 ,  H01S5/30

CPC分类号： H01S5/164 ,  H01S5/0421 ,  H01S5/162 ,  H01S5/168 ,  H01S5/2072 ,  H01S5/3054 ,  H01S5/3223 ,  H01S5/3427

摘要： A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.

摘要翻译： 半导体激光元件包括：窗口区域，其包括通过III族空位扩散形成的无序部分，通过在窗口区域上提供吸收预定原子的促进膜促进的扩散; 包括量子阱结构的有源层的非窗口区域; 并且在窗口区域中的能带间隙和非窗口区域中的能带间隙之间的差异等于或大于50meV。

公开(公告)号：US6151347A

公开(公告)日：2000-11-21

申请号：US93399

申请日：1998-06-09

申请人： Jean-Paul F. Noel ,  David M. Adams

发明人： Jean-Paul F. Noel ,  David M. Adams

IPC分类号： H01S5/02 ,  H01S5/227 ,  H01S5/34 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/021 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/3427

摘要： A semiconductor laser device structure comprising an active region provided by a quantum well of an indirect bandgap material, the quantum well being divided laterally to form an active region comprising a two dimensional array of localized cells. Preferably the quantum well of indirect band gap material is selected from group IV semiconductor materials and comprises a silicon-germanium alloy. A silicon/silicon-germanium alloy multi-quantum well (MQW) structure is described. In a preferred embodiment, a Si/SiGe alloy MQW laser diode comprises a coplanar double grating configuration etched through the MQW structure to provide distributed feedback. The double intersecting grating structure functions to define an array of "cells" or regions of finite dimensions in the quantum well structure which "localize" carriers within the cells thereby enhancing the radiative emission probability. The grating also provides for combined gain-coupled and index-coupled distributed feedback. The diode structure is preferably designed using a suitable Si/SiGe alloy composition and QW layer thicknesses, to provide for lasing at wavelengths compatible with fiber optic communication applications.

摘要翻译： 一种半导体激光器件结构，包括由间接带隙材料的量子阱提供的有源区，所述量子阱横向划分以形成包含局部电池的二维阵列的有源区。 优选地，间接带隙材料的量子阱选自IV族半导体材料并且包括硅 - 锗合金。 描述了硅/硅 - 锗合金多量子阱（MQW）结构。 在优选实施例中，Si / SiGe合金MQW激光二极管包括通过MQW结构蚀刻的共面双光栅配置，以提供分布式反馈。 双相交光栅结构用于定义量子阱结构中的“细胞”或有限维的区域的阵列，其使得细胞内的载体“定位”，从而增强辐射发射概率。 光栅还提供组合的增益耦合和折射率耦合分布反馈。 二极管结构优选地使用合适的Si / SiGe合金组成和QW层厚度来设计，以提供与光纤通信应用兼容的波长的激光。

公开(公告)号：US4205329A

公开(公告)日：1980-05-27

申请号：US852845

申请日：1977-11-18

申请人： Raymond Dingle ,  Arthur C. Gossard ,  Pierre M. Petroff ,  William Wiegmann

发明人： Raymond Dingle ,  Arthur C. Gossard ,  Pierre M. Petroff ,  William Wiegmann

IPC分类号： G21K1/06 ,  H01L21/203 ,  H01L27/15 ,  H01L29/12 ,  H01L29/15 ,  H01L33/04 ,  H01L33/44 ,  H01S5/34 ,  H01L29/26

CPC分类号： H01L33/44 ,  B82Y10/00 ,  B82Y20/00 ,  G21K1/062 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02631 ,  H01L27/15 ,  H01L29/12 ,  H01L29/151 ,  H01L29/155 ,  H01S5/34 ,  H01L33/04 ,  H01S5/3427 ,  Y10S438/933

摘要： Suitably modified molecular beam epitaxy (MBE) techniques are used to synthesize single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates maintained below a critical growth temperature. Described is the fabrication of periodic structures of (GaAs).sub.n (AlAs).sub.m, where m and n are the number of contiguous monolayers of GaAs and AlAs, respectively, in each period of the structure. As many as 10,000 monolayers were grown in a single structure. Also described is the MBE growth of (Al.sub.x Ga.sub.1-x As).sub.n (Ge.sub.2).sub.m, quasi-superlattice and non-superlattice structures depending on the particular values of n, m and the growth temperature. Waveguides, heterostructure lasers and X-ray reflectors using some of the structures are also described.

摘要翻译： 合适改性的分子束外延（MBE）技术用于合成在保持低于临界生长温度的单晶衬底上的半导体合金的单晶，周期性单层超晶格。 描述了（GaAs）n（AlAs）m的周期性结构的制造，其中m和n分别是在结构的每个周期中的GaAs和AlAs的连续单层的数量。 多达10,000个单层生长在单一结构中。 还描述了取决于n，m的特定值和生长温度的（Al x Ga 1-x As）n（Ge 2）m，准超晶格和非超晶格结构的MBE生长。 还描述了使用一些结构的波导，异质结构激光器和X射线反射器。

公开(公告)号：US20150207296A1

公开(公告)日：2015-07-23

申请号：US14601101

申请日：2015-01-20

申请人： ROCKLEY PHOTONICS LIMITED

发明人： Andrew Rickman ,  Aaron John Zilkie

IPC分类号： H01S5/125 ,  H01S5/32 ,  H01S5/30 ,  H01S5/34 ,  H01S5/10 ,  H01S5/02

CPC分类号： H01S5/125 ,  H01S3/1055 ,  H01S3/106 ,  H01S5/021 ,  H01S5/028 ,  H01S5/1007 ,  H01S5/1209 ,  H01S5/142 ,  H01S5/3031 ,  H01S5/3224 ,  H01S5/3427

摘要： A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium; wherein the phase-tunable waveguide platform includes a first Distributed Bragg Reflector (DBR) and a second Distributed Bragg Reflector (DBR); at least one of the Distributed Bragg Reflectors having a comb reflectance spectrum; and wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium.

摘要翻译： 一种波长可调的绝缘体上硅（SOI）激光器，包括：激光腔，包括：具有前端和后端的半导体增益介质; 以及耦合到所述半导体增益介质的前端的相位可调波导平台; 其中所述相位可调波导平台包括第一分布布拉格反射器（DBR）和第二分布布拉格反射器（DBR）; 分布布拉格反射器中的至少一个具有梳状反射光谱; 并且其中所述激光腔的反射镜位于所述半导体增益介质的后端。

公开(公告)号：US20140369372A1

公开(公告)日：2014-12-18

申请号：US14256758

申请日：2014-04-18

申请人： Acorn Technologies, Inc.

发明人： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC分类号： H01S5/32 ,  H01S5/125 ,  H01S5/187

CPC分类号： H01S5/187 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3201 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

摘要： Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

摘要翻译： 提供拉伸应变锗，其可以被充分应变以提供几乎直接的带隙材料或直接带隙材料。 与锗区接触的压应力或拉应力应力源材料在锗区域引起单轴或双轴拉伸应变。 应力材料可以包括氮化硅或硅锗。 所得到的应变锗结构可用于发射或检测光子，包括例如在谐振腔内产生光子以提供激光。