公开(公告)号：US08471435B2

公开(公告)日：2013-06-25

申请号：US13276341

申请日：2011-10-19

申请人： Naohiro Nodake ,  Hideaki Takahashi ,  Shin Saijo

发明人： Naohiro Nodake ,  Hideaki Takahashi ,  Shin Saijo

IPC分类号： H01L41/08

CPC分类号： H01L41/29 ,  H01L41/22 ,  H01L41/27 ,  H03H3/04 ,  H03H3/10 ,  H03H9/0222 ,  H03H2003/0414 ,  H03H2003/045 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

摘要： In the boundary acoustic wave device, an IDT electrode, a first dielectric layer, and a second dielectric layer are provided on a piezoelectric substrate. The first dielectric layer is made of a deposited film. A thickness of the IDT electrode is about 10% or more of λ. A difference between a height of the first dielectric layer, measured from an upper surface of the piezoelectric substrate, above a center of an electrode finger of the IDT electrode and a height of the first dielectric layer, measured from the upper surface of the piezoelectric substrate, above a center of a gap between adjacent electrode fingers, i.e., a magnitude of unevenness in an upper surface of the first dielectric layer, is about 5% or less of λ.

摘要翻译： 在弹性边界波装置中，在压电基板上设置IDT电极，第一电介质层和第二电介质层。 第一电介质层由沉积膜制成。 IDT电极的厚度为λ的约10％以上。 从压电基板的上表面测量的第一介电层的高度与IDT电极的电极指的中心之间的距离和第一介电层的高度之间的差异是从压电基板的上表面 在相邻电极指之间的间隙的中心上方，即第一介电层的上表面中的不均匀度的大小为λ的约5％或更小。

公开(公告)号：US08099853B2

公开(公告)日：2012-01-24

申请号：US12504843

申请日：2009-07-17

申请人： Hajime Kando ,  Naohiro Nodake ,  Masahiko Saeki ,  Toshiyuki Fuyutsume

发明人： Hajime Kando ,  Naohiro Nodake ,  Masahiko Saeki ,  Toshiyuki Fuyutsume

IPC分类号： H04R31/00

CPC分类号： H03H9/0222 ,  H03H3/08 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908

摘要： A method for manufacturing a boundary acoustic wave device prevents formation of discontinuous portions in a dielectric film without a significant decrease in the thickness of an IDT when the dielectric film is formed by deposition and without deterioration of electrical characteristics. The method includes the steps of forming an IDT on a piezoelectric substrate, forming a lower dielectric film so as to cover the IDT, conducting a planarizing step so as to smooth the rough surface of the lower dielectric film, and forming an upper dielectric film so as to cover the lower dielectric film of which the rough surface is smoothed.

摘要翻译： 声界面波装置的制造方法通过沉积形成电介质膜并且不会劣化电气特性，可防止在电介质膜中形成不连续部分而不会使IDT的厚度显着降低。 该方法包括以下步骤：在压电基片上形成IDT，形成下电介质膜以覆盖IDT，进行平面化步骤，使下电介质膜的粗糙表面平滑，并形成上电介质膜 以覆盖粗糙表面平滑的下电介质膜。