公开(公告)号：US20100153363A1

公开(公告)日：2010-06-17

申请号：US12631255

申请日：2009-12-04

申请人： Naohiro SUZUKI ,  Naoki Ikawa

发明人： Naohiro SUZUKI ,  Naoki Ikawa

IPC分类号： G06F17/30

CPC分类号： G06F17/30463

摘要： An operation management program collects a query status table of a migration-source agent processing program and creates a server status table. The operation management program, based on the server status table, computes a migration cost for each query, and selects the query with the smallest migration cost as a migration query. Then, the operation management program migrates the selected query, using the optimum migration method.

摘要翻译： 操作管理程序收集迁移源代理处理程序的查询状态表，并创建服务器状态表。 操作管理程序根据服务器状态表计算每个查询的迁移成本，并选择迁移成本最小的查询作为迁移查询。 然后，运行管理程序使用最佳迁移方法迁移所选查询。

公开(公告)号：US20080258153A1

公开(公告)日：2008-10-23

申请号：US12076874

申请日：2008-03-25

申请人： Takeo YAMAMOTO ,  Naohiro SUZUKI ,  Eiichi OKUNO

发明人： Takeo YAMAMOTO ,  Naohiro SUZUKI ,  Eiichi OKUNO

IPC分类号： H01L29/24 ,  H01L21/329

CPC分类号： H01L29/872 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/861

摘要： An SiC semiconductor device is provided, which comprises: a substrate made of silicon carbide and having a principal surface; a drift layer made of silicon carbide and disposed on the principal surface; an insulating layer disposed on the drift layer and including an opening; a Schottky electrode contacting with the drift layer through the opening; a termination structure disposed around an outer periphery of the opening; and second conductivity type layers disposed in a surface part of the drift layer, contacting the Schottky electrode, surrounded by the termination structure, and separated from one another. The second conductivity type layers include a center member and ring members. Each ring member surrounds the center member and is arranged substantially in a point symmetric manner with respect to the center member.

摘要翻译： 提供了一种SiC半导体器件，其包括：由碳化硅制成并具有主表面的衬底; 由碳化硅制成的漂移层，设置在主表面上; 绝缘层，设置在所述漂移层上并包括开口; 肖特基电极通过开口与漂移层接触; 设置在所述开口的外周周围的端接结构; 以及设置在漂移层的表面部分中的第二导电类型层，与由端接结构包围的肖特基电极接触并彼此分离。 第二导电类型层包括中心构件和环构件。 每个环构件围绕中心构件并且基本上相对于中心构件以点对称的方式布置。

公开(公告)号：US20080206941A1

公开(公告)日：2008-08-28

申请号：US12068263

申请日：2008-02-05

申请人： Eiichi OKUNO ,  Hiroki NAKAMURA ,  Naohiro SUZUKI

发明人： Eiichi OKUNO ,  Hiroki NAKAMURA ,  Naohiro SUZUKI

IPC分类号： H01L21/336

CPC分类号： H01L29/7828 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813

摘要： A method for manufacturing a SiC semiconductor device includes: preparing a SiC substrate having a (11-20)-orientation surface; forming a drift layer on the substrate; forming a base region in the drift layer; forming a first conductivity type region in the base region; forming a channel region on the base region to couple between the drift layer and the first conductivity type region; forming a gate insulating film on the channel region; forming a gate electrode on the gate insulating film; forming a first electrode to electrically connect to the first conductivity type region; and forming a second electrode on a backside of the substrate. The device controls current between the first and second electrodes by controlling the channel region. The forming the base region includes epitaxially forming a lower part of the base region on the drift layer.

摘要翻译： 一种制造SiC半导体器件的方法包括：制备具有（11-20）取向表面的SiC衬底; 在衬底上形成漂移层; 在漂移层中形成基极区; 在所述基底区域中形成第一导电类型区域; 在所述基极区上形成沟道区，以在所述漂移层和所述第一导电类型区之间耦合; 在沟道区上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 形成电连接到所述第一导电类型区域的第一电极; 以及在所述衬底的背面上形成第二电极。 该器件通过控制沟道区域来控制第一和第二电极之间的电流。 形成基极区域包括外延地形成漂移层上的基极区域的下部。

公开(公告)号：US20110291110A1

公开(公告)日：2011-12-01

申请号：US13117575

申请日：2011-05-27

申请人： Naohiro SUZUKI ,  Hideo MATSUKI ,  Masahiro SUGIMOTO ,  Hidefumi TAKAYA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Narumasa SOEJIMA ,  Yukihiko WATANABE

发明人： Naohiro SUZUKI ,  Hideo MATSUKI ,  Masahiro SUGIMOTO ,  Hidefumi TAKAYA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Narumasa SOEJIMA ,  Yukihiko WATANABE

IPC分类号： H01L29/12 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068

摘要： The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.

摘要翻译： 碳化硅半导体器件包括衬底，漂移层，基极区域，源极区域，沟槽，栅极绝缘层，栅极电极，源极电极，漏极电极和深层。 深层设置在基底区域下方并且位于比沟槽更深的深度。 深层在与沟槽的纵向方向交叉的方向上分成多个部分。 这些部分包括设置在与沟槽相对应的位置处的一组部分，其在沟槽的纵向方向上以相等的间隔布置。 该组部分围绕沟槽的底部的角落。